公开(公告)号：WO2007027798A3

公开(公告)日：2007-05-03

申请号：PCT/US2006033899

申请日：2006-08-30

Applicant: ADVANCED TECH MATERIALS ,  OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

IPC: B05D3/06 ,  C23C14/14 ,  C23C14/24 ,  C23C14/46 ,  C23C14/48 ,  H01L21/265 ,  H01L21/425

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract translation: 使用比三氟化硼更容易裂解的氟化的含硼掺杂剂物质来注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易裂解的氟化的含硼掺杂剂物质来注入含硼离子。 还公开了供应氢化硼前体的系统，形成氢化硼前体的方法和供应氢化硼前体的方法。 在本发明的一个实施方式中，为了制造半导体产品，例如集成电路，产生硼氢化物前体用于簇硼注入。

公开(公告)号：SG2014011944A

公开(公告)日：2014-08-28

申请号：SG2014011944

申请日：2006-08-30

Applicant: ADVANCED TECH MATERIALS

Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

公开(公告)号：SG165321A1

公开(公告)日：2010-10-28

申请号：SG2010062610

申请日：2006-08-30

Applicant: ADVANCED TECH MATERIALS

Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

Abstract: Methods of implanting boron-containing ions using fluorinated boron- containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

公开(公告)号：EP1933992A4

公开(公告)日：2010-12-08

申请号：EP06813979

申请日：2006-08-30

Applicant: ADVANCED TECH MATERIALS

Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

IPC: B05D3/06 ,  C23C14/14 ,  C23C14/24 ,  C23C14/46 ,  C23C14/48 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/425

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658