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    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    2.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号：WO2007127865A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007067542

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    IPC: C25F1/00 ,  C25F3/12

    CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    4.
    发明专利
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 未知

    公开(公告)号：SG171606A1

    公开(公告)日：2011-06-29

    申请号：SG2011029022

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas- phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, C12, HC1, C1F3, C102, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COC12, CC14, CHC13, CH2C12 and CH3C1.

    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME
    5.
    发明申请
    ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME 审中-公开
    离子植入物系统，包括远距离源物质，以及包含其的方法

    公开(公告)号：WO2012074889A2

    公开(公告)日：2012-06-07

    申请号：PCT/US2011062168

    申请日：2011-11-26

    Applicant: ADVANCED TECH MATERIALS ,  OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

    Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

    IPC: H01L21/265 ,  H01J37/30

    CPC classification number: C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  Y10T137/8593

    Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

    Abstract translation: 描述了掺杂源气体供应装置和方法，其中一个或多个掺杂剂源气体供应容器包含在离子注入系统的外壳内，例如在该外壳内的气体箱中。 在一个实施方案中，掺杂剂源气体供应容器位于与离子注入系统的气体箱的远端关系中，在气体箱中具有掺杂剂源气体本地容器，以及供应管线，用于将掺杂剂源气体供应容器互相供应 与掺杂剂源气体本地容器的关系，其中供应管线仅在离子注入系统处于非操作状态时才将掺杂源气体从供应容器流动到局部容器，并且被排空或填充 当离子注入系统处于操作状态时的惰性加压气体。

    DELIVERY OF LOW PRESSURE DOPANT GAS TO A HIGH VOLTAGE ION SOURCE
    7.
    发明申请
    DELIVERY OF LOW PRESSURE DOPANT GAS TO A HIGH VOLTAGE ION SOURCE 审中-公开
    将低压多孔气体输送到高压离子源

    公开(公告)号：WO2007027965A2

    公开(公告)日：2007-03-08

    申请号：PCT/US2006034135

    申请日：2006-08-29

    Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

    Inventor： ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

    IPC: B05D3/00

    CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J37/3172 ,  H01J2237/0203

    Abstract: A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

    Abstract translation: 一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制 高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。 具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度 相对于气体的电离电位的低压气体，抑制气体流路中的电离。

    APPARATUS AND METHOD FOR USE OF INDIUM CHLORIDE TO DELIVER INDIUM VAPOR TO ION SOURCE
    9.
    发明申请
    APPARATUS AND METHOD FOR USE OF INDIUM CHLORIDE TO DELIVER INDIUM VAPOR TO ION SOURCE 审中-公开
    使用氯化镉将离子源蒸发的装置和方法

    公开(公告)号：WO2007085008A3

    公开(公告)日：2008-01-03

    申请号：PCT/US2007060810

    申请日：2007-01-20

    Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ARNO JOSE I

    Inventor： KAIM ROBERT ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ARNO JOSE I

    IPC: C07F5/00

    CPC classification number: C23C14/22 ,  C23C16/4485 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006

    Abstract: An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.

    Abstract translation: 一种离子注入系统（100），其包括适于电离前体蒸汽以形成用于注入衬底（30）的离子的离子源，包括适于保持前体的容器（102）的材料储存和分配设备，以及分配组件 （104,108），其耦合到所述容器以从所述容器分配前体。 分配组件与离子源（10）耦合，并且加热器（106）适于加热容器中的前体，使得从所述装置分配到离子源的前体保持在用于注入离子的气相 从其衍生。 这种系统适用于例如从便携式材料储存和分配装置输送一氯化铟，而不需要将蒸发器整合到离子源的壳体中，并且不需要与三氯化铟的使用有关的处理和处理问题。

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