Abstract:
Apparatus and process for the abatement of fluorine and fluorine-containing compounds from gases containing same, such as effluent gas streams from semiconductor manufacturing operations, wherein a fluorocompound abatement medium is injected into the fluorocompound-containing gas. The fluorocompound abatement medium comprises at least one of steam, methane and hydrogen, with the proviso that when the fluorocompound abatement medium contains methane and/or hydrogen, the injection of the fluorocompound abatement medium is conducted under non-combustion conditions.
Abstract:
A vessel having a drawn seamless tube closed at one end to define an interior volume holding a monolithic carbon adsorbent that is confonned in size and shape to the interior volume of the drawn seamless tube and occupies at least 60% of said interior volume is described. The drawn seamless tube having an opposite end to which a top plate member is welded, with a fluid dispensing assembly secured to the top plate member. By the use of the adsorbent media, a gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.
Abstract:
A method and apparatus for cleaning residue from components of the vacuum chamber and beamline of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region of the vacuum chamber.
Abstract:
An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
Abstract:
A system (10) including a reagent supply container (12) in which a vessel (14) holds a composition including a chemical reagent dissolved or dispersed in a storage liquid (18) that is reversibly interactive with the chemical reagent to store the chemical reagent therein, and an ultrasonic energy source (19, 32, 34) adapted to introduce ultrasonic energy into the composition to liberate the chemical reagent therefrom for dispensing from the vessel of the reagent supply container. The ultrasonic energy source can be internally provided in the container, or may be provided as part of an external ultrasonic energy impingement unit (112), in which the stored chemical reagent, e.g., a microelectronic device manufacturing reagent, is extracted from the liquid storage medium for transport to a reagent-utilizing process or facility (38). The liquid storage medium may for example include an ionic liquid with which the chemical reagent is reversibly taken up, and subsequently released under ultrasonic energy exposure dispensing conditions.
Abstract:
A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.
Abstract:
A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.
Abstract:
Multi-stage abatement systems and methods of use to remove final traces of pollutants and hazardous substances such as fluorinated species from effluents generated by semiconductor manufacturing operations. The effluent is treated in a main abatement tool, in combination with a secondary polishing scrubber that utilizes a high efficiency abatement technique to remove the final traces of pollutants from the effluent gas. The polishing scrubber can utilize treatment units such as high retention time scrubber vessels, recirculating post scrubber beds, dry post scrubbers, catalytic systems for OF2 abatement, and/or UV radiation systems for OF2 abatement.
Abstract:
An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.