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    2.
    发明专利
    未知

    公开(公告)号：DE10081315T1

    公开(公告)日：2001-08-30

    申请号：DE10081315

    申请日：2000-05-08

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  PAW WITOLD

    IPC: C07D307/06 ,  C07C49/92 ,  C07F3/00 ,  C07F5/00 ,  C23C16/40

    Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal beta-diketonate adducts of the formula M(beta-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

    Composition and method for cvd deposition of zr/hf silicate films
    5.
    发明专利
    Composition and method for cvd deposition of zr/hf silicate films 未知

    公开(公告)号：AU7847700A

    公开(公告)日：2001-05-10

    申请号：AU7847700

    申请日：2000-10-02

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  PAW WITOLD

    IPC: C07C49/92 ,  C07F7/08 ,  C09D1/00 ,  C23C16/40 ,  C23C16/18

    Abstract: A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

    Tetrahydrofuran-adducted group 11 ß-diketonate complexes as source reagents for chemical vapor depostion
    6.
    发明专利
    Tetrahydrofuran-adducted group 11 ß-diketonate complexes as source reagents for chemical vapor depostion 未知

    公开(公告)号：GB2358395B

    公开(公告)日：2004-02-25

    申请号：GB0028323

    申请日：2000-05-08

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  PAW WITOLD

    IPC: C07C49/92 ,  C07D307/06 ,  C07F3/00 ,  C07F5/00 ,  C23C16/40

    Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal beta-diketonate adducts of the formula M(beta-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

    7.
    发明专利
    未知

    公开(公告)号：DE10081315C2

    公开(公告)日：2003-12-18

    申请号：DE10081315

    申请日：2000-05-08

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  PAW WITOLD

    IPC: C07D307/06 ,  C07C49/92 ,  C07F3/00 ,  C07F5/00 ,  C23C16/40

    Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal beta-diketonate adducts of the formula M(beta-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

    Tetrahydrofuran-adducted group II ß-diketonate complexes as source reagents for chemical vapor depostion
    8.
    发明专利
    Tetrahydrofuran-adducted group II ß-diketonate complexes as source reagents for chemical vapor depostion 未知

    公开(公告)号：GB2358395A

    公开(公告)日：2001-07-25

    申请号：GB0028323

    申请日：2000-05-08

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  PAW WITOLD

    IPC: C07C49/92 ,  C07D307/06 ,  C07F3/00 ,  C07F5/00 ,  C23C16/40

    Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal -diketonate adducts of the formula M( -diketonate) 2 (L) 4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

    SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME
    10.
    发明公开
    SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME 审中-公开
    QUELLENREAGENSZUSAMMENSETZUNG ZUR CVD-BILDUNG VON Zr / Hf-DOTIERTEN GATEDIELEKTRISCHENMETALLOXIDDÜNNFILMENMIT HOHERDIELEKTRIZITÄTSKONSTANTEUND VERFAHREN ZUR VERWENDUNG DERSELBEN

    公开(公告)号：EP1392462A4

    公开(公告)日：2007-07-04

    申请号：EP02719015

    申请日：2002-02-19

    Applicant: ADVANCED TECH MATERIALS

    Inventor： BAUM THOMAS H ,  XU CHONGYING ,  PAW WITOLD ,  HENDRIX BRIAN C ,  ROEDER JEFFREY F ,  WANG ZIYUN

    IPC: C07C49/92 ,  C07F7/00 ,  C07F7/08 ,  C09D1/00 ,  C23C16/40

    CPC classification number: C09D1/00 ,  C07F7/006 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/409

    Abstract: Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

    Abstract translation: 用于形成Zr / Hf掺杂栅极电介质，铁电或高介电常数（k）金属氧化物薄膜的化学气相沉积（CVD）前体组合物。 在一个实施方案中，前体组合物包含具有通式M（β-二酮酸酯）2（OR）2的金属前体，其中M是Zr或Hf，并且R是叔丁基。 前体组合物还可以包含选自醚，甘醇二甲醚，四甘醇二甲醚，胺，多胺，醇，二醇，脂族烃溶剂，芳族烃溶剂，环醚和上述两种或更多种的相容性组合的溶剂介质 。

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