公开(公告)号：WO2009152108A8

公开(公告)日：2010-07-29

申请号：PCT/US2009046655

申请日：2009-06-08

Applicant: ADVANCED TECH MATERIALS ,  ZHENG JUN-FEI ,  ROEDER JEFFREY F ,  CHEN PHILIP S H

Inventor： ZHENG JUN-FEI ,  ROEDER JEFFREY F ,  CHEN PHILIP S H

IPC: H01L27/115 ,  H01L21/20 ,  H01L21/8247

CPC classification number: H01L45/1616 ,  C23C16/305 ,  H01L45/06 ,  H01L45/144

Abstract: A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.

Abstract translation: 一种含有锗，锑和碲的多层膜堆，其可被退火以形成均匀和平滑特征的GST产​​品材料，其中至少一个含锑层通过中间锗层与含碲层分离，并且 多层膜堆叠包括至少两个中间的锗层。 可以通过诸如化学气相沉积或原子层沉积的气相沉积技术形成多层膜堆叠。 可退火的多层膜堆叠可以形成在高纵横比通孔中，以形成相对于GST产品材料的化学计量和形态特征的优异特征的相变存储器件。

公开(公告)号：WO2008057616A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2004036175A3

公开(公告)日：2004-06-17

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 气体检测器（54）和用于检测含有气体的气体中的含氟物质的方法，例如用HF，NF3等进行蚀刻清洗的半导体加工工具的流出物。优选结构布置中的检测器采用微机电 系统（MEMS）的装置结构和/或自立式金属元件（8），其在需要高温感测时用作感测部件并且可选地作为热源。 独立金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：SG171683A1

公开(公告)日：2011-06-29

申请号：SG2011033982

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350 degree C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：DE69838502D1

公开(公告)日：2007-11-15

申请号：DE69838502

申请日：1998-06-26

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  VAN BUSKIRK PETER C ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C23C16/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: A low temperature CVD process using a tris (beta-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：SG152203A1

公开(公告)日：2009-05-29

申请号：SG2008080699

申请日：2008-10-30

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN PHILIP S H ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  LI WEIMIN

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2)2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. Figure 13

公开(公告)号：AU8031800A

公开(公告)日：2001-05-30

申请号：AU8031800

申请日：2000-10-24

Applicant: ADVANCED TECH MATERIALS

Inventor： HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA ,  ROEDER JEFFREY F ,  PAW WITOLD

IPC: C23C16/40 ,  C09K3/00

公开(公告)号：SG176449A1

公开(公告)日：2011-12-29

申请号：SG2011080819

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Abstract: ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMSAbstractAntimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such filmsFigure 1

公开(公告)号：DE69838502T2

公开(公告)日：2008-07-24

申请号：DE69838502

申请日：1998-06-26

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  VAN BUSKIRK PETER C ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C23C16/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: A low temperature CVD process using a tris (beta-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：CA2565231A1

公开(公告)日：2004-11-25

申请号：CA2565231

申请日：2004-05-04

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  ROEDER JEFFREY F ,  XU CHONGYING ,  HEALY MATTHEW

IPC: B08B3/00 ,  B08B3/04 ,  C11D1/00 ,  C11D3/02 ,  C11D3/16 ,  C11D3/18 ,  C11D3/20 ,  C11D3/24 ,  C11D3/28 ,  C11D3/43 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  D06L1/00 ,  G03F7/42

Abstract: Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, includes supercritical fluid, e.g., supercritical CO2, and organic co-solvent, e.g., xylene. Another composition of such type having utility for removal of metals, metal oxides, metal-containing post-etch residues and CMP particles from semiconductor substrates includes supercritical fluid and at least one beta-diketone.