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1.发明申请ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A3
公开(公告)日：2009-04-09
申请号：PCT/US2007063830
申请日：2007-03-12
Applicant: ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
Inventor： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
CPC classification number: H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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2.发明申请SOURCE REAGENT-BASED DELIVERY OF FLUID WITH HIGH MATERIAL FLUX FOR BATCH DEPOSITION 审中-公开基于源试剂的高质量流体输送用于分批沉积
公开(公告)号：WO2013181521A3
公开(公告)日：2014-02-27
申请号：PCT/US2013043592
申请日：2013-05-31
Applicant: ADVANCED TECH MATERIALS
Inventor： HENDRIX BRYAN C , GREGG JOHN N , BATTLE SCOTT L , NUALPHAITO DONN K , BARTOSH KYLE , CLEARY JOHN M , CHEON SEBUM
IPC: C23C16/44 , C23C16/458
CPC classification number: C23C16/458 , B01B1/005 , C23C16/4402 , C23C16/4481 , C23C16/455
Abstract: Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.
Abstract translation: 公开了系统，试剂支撑盘，粒子抑制装置和方法。 在一个方面，一种系统包括蒸发器容器，该蒸发器容器具有包围内部容积的一个或多个内壁和被配置为在内部容积内垂直堆叠的多个试剂支撑盘。 多个试剂支撑托盘中的每一个构造成在内部空间内可垂直堆叠以形成一堆试剂支撑托盘。 多个试剂支撑托盘中的一个或多个配置成将通过相邻的试剂支撑托盘之间的气体流引导到试剂托盘的堆叠中，以引起气体流与特定试剂载体中的源试剂材料相互作用 在进入试剂托盘堆叠中的多个试剂载体托盘中的下一个之前，托盘。
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公开(公告)号：WO2007133837A3
公开(公告)日：2008-03-13
申请号：PCT/US2007063832
申请日：2007-03-12
Applicant: ADVANCED TECH MATERIALS , ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C , STAUF GREGORY T , XU CHONGYING , HUNKS WILLIAM , CHEN TIANNIU , STENDER MATTHIAS
Inventor： ROEDER JEFFREY F , BAUM THOMAS H , HENDRIX BRYAN C , STAUF GREGORY T , XU CHONGYING , HUNKS WILLIAM , CHEN TIANNIU , STENDER MATTHIAS
IPC: G11C11/00
CPC classification number: H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
Abstract translation: 一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。
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4.发明申请CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM 审中-公开高电导率的化学气相沉积，RENHENIUM的薄膜
公开(公告)号：WO2005081933A3
公开(公告)日：2006-09-08
申请号：PCT/US2005005609
申请日：2005-02-23
Applicant: ADVANCED TECH MATERIALS , HENDRIX BRYAN C , WELCH JAMES J , BILODEAU STEVEN M , ROEDER JEFFREY F , XU CHONGYING , BAUM THOMAS H
Inventor： HENDRIX BRYAN C , WELCH JAMES J , BILODEAU STEVEN M , ROEDER JEFFREY F , XU CHONGYING , BAUM THOMAS H
CPC classification number: C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
Abstract translation: 描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。 该方法包括沉积钌成核层，随后沉积高度导电的钌上层。 使用低沉积速率的化学气相沉积（CVD）沉积两层。
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5.发明申请SOURCE REAGENT-BASED DELIVERY OF FLUID WITH HIGH MATERIAL FLUX FOR BATCH DEPOSITION 审中-公开基于源试剂的高质量流体输送用于分批沉积
公开(公告)号：WO2013181521A2
公开(公告)日：2013-12-05
申请号：PCT/US2013043592
申请日：2013-05-31
Applicant: ADVANCED TECH MATERIALS
Inventor： HENDRIX BRYAN C , GREGG JOHN N , BATTLE SCOTT L , NUALPHAITO DONN K , BARTOSH KYLE , CLEARY JOHN M , CHEON SEBUM
IPC: C23C16/44 , C23C16/458
CPC classification number: C23C16/458 , B01B1/005 , C23C16/4402 , C23C16/4481 , C23C16/455
Abstract: Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.
Abstract translation: 公开了系统，试剂支撑盘，粒子抑制装置和方法。 在一个方面，一种系统包括蒸发器容器，该蒸发器容器具有包围内部容积的一个或多个内壁和被配置为在内部容积内垂直堆叠的多个试剂支撑盘。 多个试剂支撑托盘中的每一个构造成在内部空间内可垂直堆叠以形成一堆试剂支撑托盘。 多个试剂支撑托盘中的一个或多个配置成将通过相邻的试剂支撑托盘之间的气体流引导到试剂托盘的堆叠中，以引起气体流与特定试剂载体中的源试剂材料相互作用 在进入试剂托盘堆叠中的多个试剂载体托盘中的下一个之前，托盘。
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Patent Agency Ranking6.发明申请ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 审中-公开用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：WO2008057616A8
公开(公告)日：2010-03-18
申请号：PCT/US2007063830
申请日：2007-03-12
Applicant: ADVANCED TECH MATERIALS , HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
Inventor： HUNKS WILLIAM , CHEN TIANNIU , XU CHONGYING , ROEDER JEFFREY F , BAUM THOMAS H , PETRUSKA MELISSA A , STENDER MATTHIAS , CHEN PHILIP S H , STAUF GREGORY T , HENDRIX BRYAN C
CPC classification number: H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/902 , C07F9/904 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。
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7.发明申请SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME 审中-公开用于形成Zr / Hf多孔栅电介质和高介电常数金属氧化物薄膜的CVD原料组合物及其使用方法
公开(公告)号：WO02069371A3
公开(公告)日：2002-12-12
申请号：PCT/US0204860
申请日：2002-02-19
Applicant: ADVANCED TECH MATERIALS
Inventor： BAUM THOMAS H , XU CHONGYING , PAW WITOLD , HENDRIX BRYAN C , ROEDER JEFFREY F , WANG ZIYUN
CPC classification number: C09D1/00 , C07F7/006 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/409
Abstract: Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M( beta -diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
Abstract translation: 用于形成Zr / Hf掺杂栅极电介质，铁电或高介电常数（k）金属氧化物薄膜的化学气相沉积（CVD）前体组合物。 在一个实施方案中，前体组合物包含具有通式M（β-二酮基）2（OR）2）的金属前体，其中M为Zr或Hf，R为叔丁基。 前体组合物还可以包含选自醚，甘氨酸，四聚体，胺，多胺，醇，二醇，脂族烃溶剂，芳族烃溶剂，环醚和前述两种或多种的相容组合的溶剂介质 。
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公开(公告)号：WO0034550A3
公开(公告)日：2002-09-19
申请号：PCT/US9928833
申请日：1999-12-06
Applicant: INFINEON TECHNOLOGIES AG , ADVANCED TECH MATERIALS
Inventor： HINTERMAIER FRANK S , VAN BUSKIRK PETER C , ROEDER JEFFREY F , HENDRIX BRYAN C , BAUM THOMAS H , DESROCHERS DEBRA A
IPC: C23C16/40 , C23C16/452 , C23C16/56 , H01L21/314 , H01L21/316 , C23C18/12 , C30B25/02
CPC classification number: H01L21/31691 , C23C16/40 , C23C16/407 , C23C16/452 , C23C16/56
Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides adjacent to the substrate. The precursor of Bi oxide is a Bi complex which includes at least one aryl group and is decomposed at a decomposition temperature lower than 450 DEG C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
Abstract translation: 化学气相沉积用于通过分解与衬底相邻的这些氧化物的前体在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个芳基的Bi络合物，并且在低于450℃的分解温度下分解。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非铁电 ，但可以通过随后的加热工艺转化成铁电体膜。
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公开(公告)号：MY153662A
公开(公告)日：2015-03-13
申请号：MYPI20090789
申请日：2007-08-31
Applicant: ADVANCED TECH MATERIALS
Inventor： CLEARY JOHN M , ARNO JOSE I , HENDRIX BRYAN C , DONN NAITO , SCOTT BATTLE , JOHN GREGG , WODJENSKI MICHAEL J , CHONGYING XU
IPC: C23C16/448
Abstract: APPARATUS AND METHOD FOR VOLATILIZING A SOURCE REAGENT SUSCEPTIBLE TO PARTICLE GENERATION OR PRESENCE OF PARTICLES IN THE CORRESPONDING SOURCE REAGENT VAPOR, IN WHICH SUCH PARTICLE GENERATION OR PRESENCE IS SUPPRESSED BY STRUCTURAL OR PROCESSING FEATURES OF THE VAPOR GENERATION SYSTEM. SUCH APPARATUS AND METHOD ARE APPLICABLE TO LIQUID AND SOLID SOURCE REAGENTS, PARTICULARLY SOLID SOURCE REAGENTS SUCH AS METAL HALIDES, E.G., HAFNIUM CHLORIDE. THE SOURCE REAGENT IN ONE SPECIFIC IMPLEMENTATION IS CONSTITUTED BY A POROUS MONOLITHIC BULK FORM OF THE SOURCE REAGENT MATERIAL. THE APPARATUS AND METHOD OF THE INVENTION ARE USEFULLY EMPLOYED TO PROVIDE SOURCE REAGENT VAPOR FOR APPLICATIONS SUCH AS ATOMIC LAYER DEPOSITION (ALD) AND ION IMPLANTATION.
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公开(公告)号：SG11201407978WA
公开(公告)日：2015-01-29
申请号：SG11201407978W
申请日：2013-05-31
Applicant: ADVANCED TECH MATERIALS
Inventor： HENDRIX BRYAN C , GREGG JOHN N , BATTLE SCOTT L , ΝΑITO DONN K , BARTOSH KYLE , CLEARY JOHN M , CHEON SEBUM , HODGES JORDAN
IPC: C23C16/44 , C23C16/458
Abstract: Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.
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