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公开(公告)号：JP2001072491A
公开(公告)日：2001-03-21
申请号：JP24434899
申请日：1999-08-31
Applicant: AGENCY IND SCIENCE TECHN , SHOWA DENKO KK , DENSO CORP
Inventor： ARAI KAZUO , NISHIZAWA SHINICHI , KOYANAGI NAOKI , KITO YASUO
IPC: H01L21/203 , C30B23/06 , C30B29/36
Abstract: PROBLEM TO BE SOLVED: To continuously grow a high quality single crystal having small amount of micropipe and a large enlargement ratio of a crystal diameter for a long time by growing the crystal by a sublimation method by installing a hollow thermally conductive body having thin upper part and thick lower part in a crucible. SOLUTION: The single crystal is a wide band gap semiconductor, e.g. a crystal of SiC, ZnSe, GaN, AlN or the like produced by a sublimation method. A hollow thermal conductive body 2 is fixed to the bottom part of a crucible 1 made of graphite, and a raw material powder (e.g. SiC powder) 3 is charged between the thermal conductive body 2 and the crucible 1. The crucible 1 made of the graphite is wrapped with a heat-insulation material 4, and set in a reaction tube 6 in a high frequency heating furnace 5. An inert gas can be introduced into the reaction tube 6, and the pressure can be also controlled. A seed crystal substrate 1 is fixed to a crucible lid 8, and set at a locally low temperature portion. The diameter of the upper opening part of the hollow thermally conductive body 2 is regulated so as to be 0.2-5 times as large as the diameter of the seed crystal, and heated to 1,800-2,400 deg.C in an inert gas atmosphere. The uniformity of a sublimed gas is secured even if the crystal is continuously grown for a long time while equating the temperature and suppressing the change of the concentration of the raw material.
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公开(公告)号：JP2001072490A
公开(公告)日：2001-03-21
申请号：JP24387899
申请日：1999-08-30
Applicant: AGENCY IND SCIENCE TECHN , DENSO CORP , SHOWA DENKO KK
Inventor： BAN OUK , NISHIZAWA SHINICHI , ARAI KAZUO , KITO YASUO , KOYANAGI NAOKI , NISHINO SHIGEHIRO
Abstract: PROBLEM TO BE SOLVED: To readily enlarge the diameter of a growing single crystal by suppressing the obstruction of the growth by a polycrystal when growing the single crystal of silicon carbide or the like by a sublimation recrystallization method. SOLUTION: The center part of the lower surface of a lid body 1 facing to the raw material powder 6 for silicon carbide, arranged in a crucible 7 is protruded to provide a seed crystal-supporting part 2, and the seed crystal 3 is attached on the supporting surface 2a. The seed crystal-supporting part 2 has a side surface 2b tilted to the supporting surface 2a side so as to have a contracted diameter, and the angle formed by the normal line of the side surface 2b and the normal line of the supporting surface 2a is regulated so as to be 20-80 deg. to prevent polycrystal 4 growing on the side surface 2b from obstructing the growth of the single crystal 5 on a seed crystal 3, and further to prevent the side surface of the single crystal 5 from being thermally etched. The single crystal 5 can grow while expanding the diameter in the outer direction.
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公开(公告)号：JPH0342563A
公开(公告)日：1991-02-22
申请号：JP17768989
申请日：1989-07-10
Applicant: AGENCY IND SCIENCE TECHN , NIPPON MICRONICS
Inventor： OGUSHI HIDEYO , ARAI KAZUO , FURUHASHI KATSUFUSA
Abstract: PURPOSE:To analyze the density of a impurities or the like in a sample by setting the state, in which a tunnel current flows between a probe and a sample, to apply a voltage pulse and measuring the transient characteristic of the junction current by an independently provided electrode. CONSTITUTION:A pulse generator PG supplies the voltage pulse from a probe P to the pn junction or the like of a sample DUT in accordance with the indication from a CPU (processor). Measuring electrodes are provided on front and rear faces of the sample DUT and are connected to a preamplifier PA which measures the tunnel current. The output current of the amplifier PA is supplied to an A/D converter ADC and is converted to a digital signal. The converter ADC converts the tunnel current, which momently changes in accordance with the pulse voltage supplied from the probe P, to a digital signal. This digital signal is supplied to a waveform analyzer WC and is recorded in a waveform memory WM. The front end of the probe P is scanned in X and Y directions by a fine adjustment mechanism MCU to set the measuring point of the sample DUT, and the density of impurities or the like is obtained as a three-dimensional picture from measured results.
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公开(公告)号：JPH0421767A
公开(公告)日：1992-01-24
申请号：JP12433790
申请日：1990-05-15
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ARAI KAZUO , NONAKA HIDEHIKO , SHIMIZU TAKASHI
IPC: B01J3/00 , B01J19/00 , B01J19/08 , B01J19/12 , C01B13/14 , C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C23C14/22 , H01B12/06 , H01L39/24
Abstract: PURPOSE:To form a perfect oxide film at the specified site on a substrate while keeping the atmosphere at high vacuum by converting an oxidative molecular gas to a supersonic beam and supplying the beam. CONSTITUTION:The metallic element is vaporized by resistance heating 13 or an electron beam 14, and a thin film of optional composition is formed on the substrate 15 by vapor deposition. A supersonic beam source 12 is provided to this film forming device. The device must be small-sized and lightweight, since the entire evacuating system of the conventional device for generating the gaseous supersonic beam used for investigating the properties of gaseous atoms and molecules is too large and impractical. Accordingly, a cryogenic method is used in this device as the evacuating system of the supersonic beam source, the system is contained in the source, and the device is made small-sized and lightweight. By using this device, an oxidative molecular gas of high flux is supplied while keeping the atmosphere at high vacuum, and a perfect oxide film is formed.
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公开(公告)号：JPS61270208A
公开(公告)日：1986-11-29
申请号：JP11099985
申请日：1985-05-23
Applicant: AGENCY IND SCIENCE TECHN
Inventor： NAMIKAWA HIROSHI , ARAI KAZUO
IPC: C01B33/113 , C01B33/12
Abstract: PURPOSE:To obtain easily inorganic fine powder consisting of various cationic compounds, having controlled composition, by dissolving another inorganic cationic salt in a liquid inorganic cationic salt, making the solution into aerosol, introducing it to a reaction system, and reacting the cations. CONSTITUTION:One or more of other cationic salts (e.g., POCl3) are dissolved in a given ratio in a liquid inorganic cation salt (e.g., SiCl4), to prepare a nonaqueous solution. Then, the nonaqueous solution is made into aerosol, introduced into a reaction system, oxidized, and subjected to a reaction such as hydrolysis, etc., to give multicomponent inorganic fine powder suitable as a raw material for various ceramics, consisting of various cationic oxidies, having precisely controlled composition ratio. An aqueous solution of an inorganic cationic salt is made into aerosol, and introduced to a reaction system. A gasified another inorganic cationic salt is fed to the reaction system, and they are reacted to give multicomponent inorganic fine powder consisting of various cationic oxides.
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Patent Agency Ranking
公开(公告)号：JP2002060297A
公开(公告)日：2002-02-26
申请号：JP2000249634
申请日：2000-08-21
Applicant: AGENCY IND SCIENCE TECHN , DENSO CORP
Inventor： BAN OUK , NISHIZAWA SHINICHI , ARAI KAZUO , KITO YASUO
IPC: C30B23/02 , C30B29/36 , H01L21/203
Abstract: PROBLEM TO BE SOLVED: To obtain an apparatus for growing a single crystal, which is capable of realizing both of enlargement of diameter of the single crystal and improvement of the quality of the single crystal with a simple constitution in the growth of the single crystal such as silicon carbide by a sublimation recrystallization method. SOLUTION: Crystal growth is accelerated by providing a tapered guide member 6 so as to surround a space above a powdery raw material 7 accommodated in a crucible 8, fixing the lower end of the guide member 6 to an inner wall close to the powdery silicon carbide raw material 7 of the crucible 8, providing an opening part in the vicinity of a silicon carbide single crystal substrate 3 whose upper end is fixed to a cover body 1 and introducing a sublimation gas of the raw material 7 onto the surface of the silicon carbide single crystal substrate 3. The upper end of the guide member 6 does not contact with any of the silicon carbide single crystal substrate 3, a seed crystal supporting part 2, the lower surface of the cover body 1, and the inner wall of the crucible 8, and a portion of the sublimation gas can flow out to the outside through a gap between these members. Thereby, the stress to the growing silicon carbide single crystal 5 caused by contact with the guide member 6 can be avoided, and a high quality single crystal having a large diameter can be obtained.
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公开(公告)号：JP2000252461A
公开(公告)日：2000-09-14
申请号：JP5239699
申请日：1999-03-01
Applicant: AGENCY IND SCIENCE TECHN , NEW ENERGY & IND TECHNOLOGY DE
Inventor： ARAI KAZUO , YOSHIDA SADAJI , NAGAI KIYOKO , SEKIKAWA TOSHIHIRO , FUKUDA KENJI
IPC: H01L29/78 , H01L21/04 , H01L21/316 , H01L21/324
Abstract: PROBLEM TO BE SOLVED: To provide a MOS capacitor of interface level density by forming at least one layer of oxide film and nitride film as a gate insulating film on a semiconductor substrate comprising a silicon carbide on the top layer before annealing in the atmosphere containing hydrogen at a temperature in specified range. SOLUTION: On a semiconductor substrate comprising a silicon carbide(SiC) on its top, at least one layer of gate insulating film comprising oxide film and nitride film is formed for annealing in the atmosphere containing hydrogen at 600-1600 deg.C thereafter, so that dangling bond of carbon or silicon present at an insulating film/silicon carbide interface is terminated, thus reducing an interface level density for better interface. Al is used for a gate electrode and ohmic contact to produce a MOS capacitor, eventually. Thus, an insulating film/silicon carbide interface sufficiently resistant for actual use is provided.
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公开(公告)号：JPH1135395A
公开(公告)日：1999-02-09
申请号：JP19380597
申请日：1997-07-18
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ARAI KAZUO , YOSHIDA SADAJI , YAMAGUCHI HIROTAKA , NISHIZAWA SHINICHI
Abstract: PROBLEM TO BE SOLVED: To provide a method which enables elimination of the need of using any large scale or elaborate device in a crystal growth equipment and attainment of uniform temp. distribution in the surface of a substrate by irradiating the substrate or a holder to which the substrate is fitted, with an energy beam to uniformize the temp. distribution within a growing crystal. SOLUTION: In the equipment for this method, a carbon crucible 1 is received inside a water-cooling jacket 4 and a work coil 5 is placed on the outer periphery of the jacket 4 to subject a raw material 2 charged into the crucible 1 to high-frequency heating. The carbon crucible 1 is placed in a goniometer 6 so that a substrate 3 for crystal growth is located at the center of the goniometer 6. Also, an X-ray source 7 is placed in the goniometer 6 so that X-rays for irradiation, which exit from a collimator 8 for X-rays radiated from the source 7, can scan the substrate 3 throughout its surface. Further, a two-dimensional X-ray detector 9 having a slit 10 in the opening is placed in the goniometer 6. This method comprises: subjecting the inside of the crucible 1 to high-frequency heating with the work coil 5 to sublimate the raw material 2; and growing a crystal layer on the substrate 3 with the sublimated vapor raw material.
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公开(公告)号：JPH1135390A
公开(公告)日：1999-02-09
申请号：JP19380697
申请日：1997-07-18
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ARAI KAZUO , YOSHIDA SADAJI , YAMAGUCHI HIROTAKA , NISHIZAWA SHINICHI
Abstract: PROBLEM TO BE SOLVED: To make it possible to elucidate a crystal growth rate, the correlation between a seed crystal defect and a grown crystal defect, by exactly measuring the temp. of a seed crystal substrate at the time of executing crystal growth from a vapor phase in a closed graphite crucible and to determine the optimization of the crystal growth conditions made by controlling only the external parameters, such as crucible wall temp. regardless of the shapes, sizes, etc., of the crucible. SOLUTION: A hermetic vessel 1 which has a substrate for effecting the crystal growth of the vapor phase raw material on a goniometer 6 and comprises an X-ray transparent material, an X-ray source 7 and a two-dimensional X-ray detector 9 are installed. The X-ray diffraction and X-ray topography obtd. by scanning the inside of a substrate surface with the X-rays from the X-ray source during the crystal growth are observed. As a result, the quality of the grown crystal is evaluated and the crystal growth conditions are controlled.
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公开(公告)号：JPS61219737A
公开(公告)日：1986-09-30
申请号：JP6124285
申请日：1985-03-26
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ARAI KAZUO , NAMIKAWA HIROSHI
IPC: C03C3/06
Abstract: PURPOSE:To prevent the color development of quartz glass caused by the irradiation, etc., of radioactive rays, ultraviolet rays and visible rays without decreasing the luminous efficiency by allowing to coexist Al2O3 and P2O5 in quartz glass. CONSTITUTION:The trace quantity of Al2O3 and P2O5 is allowed to coexist in quartz glass to prevent the color development of quartz glass. As the quartz glass, both the quartz glass added with the dopant such as rare earth element ion, etc., and the quartz glass added with no dopant can also be applied. The resultant quartz glass is preferably used as the raw material for optical fiber, glass laser, phosphorescent substance, etc.
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