公开(公告)号：JPH11271191A

公开(公告)日：1999-10-05

申请号：JP7293098

申请日：1998-03-23

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ISHIDA YUKI ,  YOSHIDA SADAJI ,  OKUMURA HAJIME ,  TAKAHASHI TETSUO

IPC: G01N21/84 ,  G01N1/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To non-destructively and rapidly observe a crystal orientation and sphalerite type structure and a crystal defect (APD) by depositing a crystal with diamond type structure on a crystal surface with the sphalerite type structure and allowing an island crystal where the direction of dangling bond of the ground is reflected to grow anisotropically for visibility. SOLUTION: Gas is introduced from a gas supply means including a crystal atom in diamond type structure, a crystal in diamond type structure is deposited on a crystal surface in sphalerite type structure, and an island-shaped crystal where the direction of dangling bond of the ground is reflected is allowed to grow in an anisotropic direction for visibility. By observing the direction of a crystal Y in diamond type structure, the crystal orientation of a crystal AX in sphalerite type structure of the ground can be determined. More specifically, since the direction of the dangling bond on the uppermost surface of the crystal AX is perpendicular to a direction where the crystal Y is extended fully, the crystal orientation can be determined according to the shape of the crystal Y when the type of atom on the uppermost surface is known. Then, when APD exists on the surface, the APD can be determined according to the distribution on the shape of the crystal Y.

公开(公告)号：JPH11150079A

公开(公告)日：1999-06-02

申请号：JP31488697

申请日：1997-11-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  TAGAMI HISAO ,  TANAKA YASUNORI ,  OKUMURA HAJIME

IPC: H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To implant ions at high doping ion flux, by allowing doping ions which cause electrical activity to be pulse a for ion implantation. SOLUTION: Pulse-like ion species generated by laser application, etc., are classified and accelerated for common ion implantation source together with doping pulse ion source. Timing is adjusted between implantation temperature and ion flux as well as state control pulse flux and doping ion pulse, for optimizing. Further, a pulse ion implantation and irradiation of excited control pulse train are coupled. Further, micro implantation condition control is performed for the doping ion, allowing optimum control of a dopant in electrical activity.

公开(公告)号：JP2000150792A

公开(公告)日：2000-05-30

申请号：JP32009298

申请日：1998-11-11

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  OKUMURA HAJIME ,  NAGAI KIYOKO ,  SEKIKAWA TOSHIHIRO ,  FUKUDA KENJI

IPC: H01L27/04 ,  H01L21/318 ,  H01L21/324 ,  H01L21/822 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To improve the electric characteristic of a semiconductor device so that the device may have a high dielectric breakdown voltage and a low interfacial level density. SOLUTION: In a semiconductor device provided with a metallic layer formed on a semiconductor substrate containing silicon carbide in at least its uppermost layer through an insulator, the insulator is constituted by laminating an oxide film and/or a nitride film upon the lowermost aluminum nitride layer. In addition, after the insulator is formed on the semiconductor substrate or the metallic layer is formed on the insulator, hydrogen annealing or hydrogen plasma irradiation is performed.

公开(公告)号：JPH1167757A

公开(公告)日：1999-03-09

申请号：JP21877497

申请日：1997-08-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  NONAKA HIDEHIKO ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA

IPC: H01L29/78 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To allow an oxide film to have high-quality interface and to prevent the oxide film from containing residual elements by oxidizing a surface of a compound semiconductor on the order of an atomic layer and thereafter forming an oxide film having a predetermined thickness on the resultant surface without oxidation. SOLUTION: Pure ozone gas is supplied onto the surface of an SiC sample substrate 1 at a room temperature inside a high vacuum equipment to remove carbon adsorbed onto the surface by a pure ozone gas oxidation method. After checking the removal by means of photoelectron spectroscopy or the like, the pure ozone gas is supplied onto the surface of the substrate 1 by raising the temperature to 300 to 700 deg.C to thereby form an SiO2 film 2 on the order of an atomic layer at a low temperature, and the absence of residual carbon is checked by means or photoelectronic spectroscopy or the like. Then, a silicon film 3 is deposited to a predetermined thickness to form a planar surface on the film 2 by controlling the temperature of the substrate 1 to such a low temperature as room temperature or about 300 deg.C. The film 3 is thereafter oxidized to form a high-quality oxide film 4 having a predetermined thickness. The speed at which to oxidize SiC is about 1/100 of silicon at the same temperature, and thus oxidation of SiC does not substantially proceed.

公开(公告)号：JPH11111617A

公开(公告)日：1999-04-23

申请号：JP27439997

申请日：1997-10-07

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME ,  YOSHIDA SADAJI

IPC: C30B23/08 ,  C30B29/38 ,  H01L21/203 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve the flatness of a surface by intermittently supplying radical beams. SOLUTION: The on/off duty of nitrogen radical beams, namely, the interrupting time Toff and the supplying time Ton of the nitrogen radical beams is specified desirably by in situ observation method. When one interruption and one supply are permitted to be one cycle, suitable number of times the cycle is to be repeated can be desirably known through the in situ observation method. When an analysis pattern from III nitride semiconductor film surface is a spot-shaped pattern, it is recognized that the flatness of the growing surface is not yet recovered. When the pattern changes to a streak pattern after several time intermittent application of nitrogen radical beams, the growing surface is discriminated to have been planarized satisfactorily. Once the flatness of the growing surface is recovered, the satisfactory flatness is generally maintained, even when the nitrogen radical beams are continuously supplied in addition to the group III elements.

公开(公告)号：JPH0297034A

公开(公告)日：1990-04-09

申请号：JP24949688

申请日：1988-10-03

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME ,  ENDO KAZUHIRO ,  MISAWA SHUNJI ,  SAKUMA EIICHIRO ,  YOSHIDA SADAJI

IPC: G01N23/00 ,  H01L21/66

Abstract: PURPOSE:To obtain a novel measurement enabling a specimen to be processed simply eliminating the process of pn junction or Schottky junction by a method wherein a semiconductor is irradiated with energy beam pulse at specified irradiation space for specified time and then the change with time of electric conductivity of the specimen from the time of stopping the irradiation is used as the input data for transient phenomenon analysis. CONSTITUTION:After irradiating a semiconductor specimen 10 with specified energy beam pulse Lp at specified irradiating space for specified time, the change with time DELTAsigma(t) of electric conductivity (b) of the specimen 1c from the time of stopping the irradiation of the said pulse Lp is sampled to use the change with time DELTAsigma(t) of the electric conductivity as the input data for transient phenomenon analysis. For example, the semiconductor specimen 10 as an object of measurement is held in a cryostat 12 maintaining a constant inner temperature conforming to the command from a computer serving both for control and analysis. Then, the semiconductor specimen 10 is irradiated with the pulse beams Lp in specified beam diameter and beams intensity (a) from a pulse beam source 14 and furthermore, if necessary, the pulse beams Lp overlap with continuous wave beams Ls emitted from a continous wave beam source 15 through the intermediary of a half-mirror 16.

公开(公告)号：JPS62138398A

公开(公告)日：1987-06-22

申请号：JP28053285

申请日：1985-12-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： YOSHIDA SADAJI ,  ENDO KAZUHIRO ,  SAKUMA EIICHIRO ,  MISAWA SHUNJI

IPC: H01L21/205 ,  C30B25/02 ,  C30B29/36

Abstract: PURPOSE:To effectively grow a large-area silicon carbide single crystal film of good quality having uniform film thickness by carrying out the growth under reduced pressure when the silicon carbide single crystal film is formed by chemical vapor growth. CONSTITUTION:A single crystal substrate 4 is arranged on a substrate heater 3 in a reaction vessel 1. The inside of the reaction vessel 1 is firstly evacuated to a high vacuum by a pump 5, then hydrogen carrier gas and hydrogen-diluted gaseous propane are introduced through a pipe 2, and a valve 6 is controlled to keep the pressure in the reaction vessel 1 at a specified vacuum. Then the substrate 4 is heated by the heater 3, hydrogen-diluted gaseous silane and hydrogen-diluted gaseous propane are introduced, and a silicon carbide single crystal is grown on the substrate 4. Consequently, since chemical vapor growth is carried out while the inside of the reaction vessel 1 is evacuated, the diffusion coefficient of the gas is increased, the film growth on the surface becomes a rate-determining step, and uniform film thickness can be obtained.

公开(公告)号：JP2000252461A

公开(公告)日：2000-09-14

申请号：JP5239699

申请日：1999-03-01

Applicant: AGENCY IND SCIENCE TECHN ,  NEW ENERGY & IND TECHNOLOGY DE

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  NAGAI KIYOKO ,  SEKIKAWA TOSHIHIRO ,  FUKUDA KENJI

IPC: H01L29/78 ,  H01L21/04 ,  H01L21/316 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To provide a MOS capacitor of interface level density by forming at least one layer of oxide film and nitride film as a gate insulating film on a semiconductor substrate comprising a silicon carbide on the top layer before annealing in the atmosphere containing hydrogen at a temperature in specified range. SOLUTION: On a semiconductor substrate comprising a silicon carbide(SiC) on its top, at least one layer of gate insulating film comprising oxide film and nitride film is formed for annealing in the atmosphere containing hydrogen at 600-1600 deg.C thereafter, so that dangling bond of carbon or silicon present at an insulating film/silicon carbide interface is terminated, thus reducing an interface level density for better interface. Al is used for a gate electrode and ohmic contact to produce a MOS capacitor, eventually. Thus, an insulating film/silicon carbide interface sufficiently resistant for actual use is provided.

公开(公告)号：JPH1135395A

公开(公告)日：1999-02-09

申请号：JP19380597

申请日：1997-07-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  YAMAGUCHI HIROTAKA ,  NISHIZAWA SHINICHI

IPC: G01N23/20 ,  B01J19/12 ,  C30B23/00 ,  C30B29/36

Abstract: PROBLEM TO BE SOLVED: To provide a method which enables elimination of the need of using any large scale or elaborate device in a crystal growth equipment and attainment of uniform temp. distribution in the surface of a substrate by irradiating the substrate or a holder to which the substrate is fitted, with an energy beam to uniformize the temp. distribution within a growing crystal. SOLUTION: In the equipment for this method, a carbon crucible 1 is received inside a water-cooling jacket 4 and a work coil 5 is placed on the outer periphery of the jacket 4 to subject a raw material 2 charged into the crucible 1 to high-frequency heating. The carbon crucible 1 is placed in a goniometer 6 so that a substrate 3 for crystal growth is located at the center of the goniometer 6. Also, an X-ray source 7 is placed in the goniometer 6 so that X-rays for irradiation, which exit from a collimator 8 for X-rays radiated from the source 7, can scan the substrate 3 throughout its surface. Further, a two-dimensional X-ray detector 9 having a slit 10 in the opening is placed in the goniometer 6. This method comprises: subjecting the inside of the crucible 1 to high-frequency heating with the work coil 5 to sublimate the raw material 2; and growing a crystal layer on the substrate 3 with the sublimated vapor raw material.

公开(公告)号：JPH1135390A

公开(公告)日：1999-02-09

申请号：JP19380697

申请日：1997-07-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  YAMAGUCHI HIROTAKA ,  NISHIZAWA SHINICHI

IPC: C30B23/00 ,  C30B23/02

Abstract: PROBLEM TO BE SOLVED: To make it possible to elucidate a crystal growth rate, the correlation between a seed crystal defect and a grown crystal defect, by exactly measuring the temp. of a seed crystal substrate at the time of executing crystal growth from a vapor phase in a closed graphite crucible and to determine the optimization of the crystal growth conditions made by controlling only the external parameters, such as crucible wall temp. regardless of the shapes, sizes, etc., of the crucible. SOLUTION: A hermetic vessel 1 which has a substrate for effecting the crystal growth of the vapor phase raw material on a goniometer 6 and comprises an X-ray transparent material, an X-ray source 7 and a two-dimensional X-ray detector 9 are installed. The X-ray diffraction and X-ray topography obtd. by scanning the inside of a substrate surface with the X-rays from the X-ray source during the crystal growth are observed. As a result, the quality of the grown crystal is evaluated and the crystal growth conditions are controlled.