DEVICE FOR RECOVERING OXYGEN DISSOLVED IN WATER

    公开(公告)号:JPS6424003A

    公开(公告)日:1989-01-26

    申请号:JP17986187

    申请日:1987-07-17

    Abstract: PURPOSE:To reduce the load of a water supply system and to decrease laminar film resistance by discharging exhaust gas in the vicinity of an interface between a gas separation membrane and water, and utilizing the movement of the bubbles generated at this time. CONSTITUTION:A hollow yarn-based gas separation membrane 3 is fixed in the housing 1 of the device for recovering oxygen dissolved in water by means of the upper and lower fixing layer 2 consisting of an adhesive. The exhaust gas used in combustion, respiration, etc., is discharged through a diffusion plate 5, and sent up as bubbles 10 in a passage 8 between membranes while accompanying and circulating the water from an outlet 4. The laminar film resistance on the surface of the gas separation membrane 3 is simultaneously removed, and the exhaust gas is discharged from an outlet 9 along with the water 12. Meantime, the oxygen and other gases dissolved in water is passed through the gas separation membrane 3, recovered, and discharged from a line 7. By this method, the device can be miniaturized, and energy can be saved.

    THIN FILM FORMING DEVICE
    4.
    发明专利

    公开(公告)号:JP2000239846A

    公开(公告)日:2000-09-05

    申请号:JP3896899

    申请日:1999-02-17

    Inventor: SHIMIZU TAKASHI

    Abstract: PROBLEM TO BE SOLVED: To provide a thin film forming device stably depositing a large amt. of uniform oxide thin film of a large area on a base material at a low temp. and a high speed. SOLUTION: The pressure of a gaseous or liq. solvent is raised to the one equal to or above the atmospheric pressure, and the temp. and pressure of the solvent which pressure is raised to the one equal to or above the atmospheric pressure are controlled. A thin film raw material 37 is eluted as gas or liq., which is sprayed into a thin film depositing tank 39 while its temp. is controlled, and the thin film raw material is deposited on a base material 38 on a substrate holder 7. Oxidizing gas contg. ozone is introduced into the surface of the base material 38 to form an oxide thin film.

    SEMICONDUCTOR ELECTRODE FORMING METHOD AND APPARATUS

    公开(公告)号:JPH08264486A

    公开(公告)日:1996-10-11

    申请号:JP6556195

    申请日:1995-03-24

    Inventor: SHIMIZU TAKASHI

    Abstract: PURPOSE: To form an electrode having excellent electrical characteristics on an oxide semiconductor. CONSTITUTION: After high purity ozone of a flowing rate density of 10 to 10 cm s is introduced into a vacuum tank 6 of an electrode material deposition apparatus 1 from a reactive oxidation gas supplying apparatus 8 to cool an oxide semiconductor S while irradiation of ozone up to the temperature not allowing isolation of oxygen, the vacuum tank 6 is quickly evacuated up to a high vacuum condition of 10 Torr. Thereby, an electrode material is deposited on the surface of an oxide semiconductor S with an electron gun type electrode material depositing part 4 or a low resistance type electrode material depositing part 5.

    INCREASING OF ENZYMIC ACTIVITY
    6.
    发明专利

    公开(公告)号:JPS62181782A

    公开(公告)日:1987-08-10

    申请号:JP2533386

    申请日:1986-02-06

    Abstract: PURPOSE:To increase the enzymic activity, by the presence of a given amount of dimethyl sulfoxide in a reaction solution in enzymic reaction using pyruvic acid kinase. CONSTITUTION:Dimethyl solfoxide in a volume to give a concentration within the range of 5-20vol% is added to a reaction solution in enzymic reaction using pyruvic acid kinase. The above-mentioned enzymic reaction is carried out at 6-9pH and 20-37 deg.C using further 5-200mmol/l potassium chloride and 1-10mmol/l magnesium chloride as additives. According to this method, since the enzymic activity of the pyruvic acid kinase can be increased by about 50%, the amount of the pyruvic acid kinase to be used can be remarkably reduced in various enzymic reactions and the method is economical.

    OXIDE THIN FILM FORMING DEVICE
    7.
    发明专利

    公开(公告)号:JPH0421767A

    公开(公告)日:1992-01-24

    申请号:JP12433790

    申请日:1990-05-15

    Abstract: PURPOSE:To form a perfect oxide film at the specified site on a substrate while keeping the atmosphere at high vacuum by converting an oxidative molecular gas to a supersonic beam and supplying the beam. CONSTITUTION:The metallic element is vaporized by resistance heating 13 or an electron beam 14, and a thin film of optional composition is formed on the substrate 15 by vapor deposition. A supersonic beam source 12 is provided to this film forming device. The device must be small-sized and lightweight, since the entire evacuating system of the conventional device for generating the gaseous supersonic beam used for investigating the properties of gaseous atoms and molecules is too large and impractical. Accordingly, a cryogenic method is used in this device as the evacuating system of the supersonic beam source, the system is contained in the source, and the device is made small-sized and lightweight. By using this device, an oxidative molecular gas of high flux is supplied while keeping the atmosphere at high vacuum, and a perfect oxide film is formed.

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