FORMATION OF HETERO HARD SUBSTANCE FILM

    公开(公告)号:JP2000064045A

    公开(公告)日:2000-02-29

    申请号:JP23430498

    申请日:1998-08-20

    Abstract: PROBLEM TO BE SOLVED: To form a hetero hard substance film on a substrate and to obtain a sliding material high in hardness and excellent in heat resistance by adhering the fine crystals of a hetero hard substance as seed crystals on the substrate and executing CVD or PVD treatment by using a base substance composed of hetero atoms. SOLUTION: The primary particles of fine crystals having 1 to 100 nm particle size of a hetero hard substance of cubic B-C-N system or C-N system diamond, β structure C3N4 or the like are dispersed into ethanol or the like, which is applied on a substrate of a silicon or the like, and dried to adhere the fine crystals of the hetero hard substance onto the substrate with 1 to 10% deposit efficiency. This seed crystal-adhered substrate is heated at 600 to 1000 deg.C, and CVD or PVD treatment is executed by using the base substance composed of the hetero atoms. As for this base substance, acetonitrile-3 boron chloride, dimethylamine-diborane-chlorine, methane-hydrogen-ammonium-diborane or the like is preferable in CVD treatment, and amorphous or hexagonal system boron carbonitride or carbon nitride is preferable in PVD treatment.

    NITROGEN POLYMER AND ITS PRODUCTION

    公开(公告)号:JPH1143315A

    公开(公告)日:1999-02-16

    申请号:JP21597897

    申请日:1997-07-25

    Abstract: PROBLEM TO BE SOLVED: To obtain a clean energy by forming a nitrogen polymer by degrading- nitrogen-containing group by applying an energy to a nitrogen-containing compound. SOLUTION: This nitrogen polymer of the formula, Nn [(n) is 4-15] such as N5 and N10 is obtained by irradiating an energy source such as discharge, heat or light, preferably high power pulse ultraviolet rays to an azide compound and a diazo compound containing a nitrogen-containing group such as azide group and diazo group capable of releasing a nitrogen component having high reactivity by degradation to degrade the nitrogen-containing group, and to release the highly reactive nitrogen component such as nitrogen radical, azide cation and azide anion. The nitrogen-containing compound used as the raw material for producing the nitrogen polymer is the one in a solid state at a normal temperature, preferably having >=80 deg.C melting point, and the proportion of the nitrogen in the molecule is >=50 atomic %. The nitrogen-containing compound having >=50 atomic % nitrogen content is exemplified by an azide compound of formula I (nitrogen content is 80 atomic %), formula II (nitrogen content is 78 atomic %) or the formula, AgN3 (nitrogen content is 75 atomic %) and preferably the azide compound comprising two elements of N and C.

    CARBON ALLOTROPE WITH PSEUDO-ONE-DIMENSIONAL STRUCTURE AND PRODUCTION OF CARBON NITRIDE COMPOUND

    公开(公告)号:JPH10182116A

    公开(公告)日:1998-07-07

    申请号:JP34685596

    申请日:1996-12-26

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a carbon nitride compound capable of providing a film excellent in adhesion even on a substrate of any material by generating a pinch plasma in a flowing state of an inert gas between a gap of a pair of electrodes comprising graphite housed in a vacuum vessel, and allowing the pinch plasma to form the film of a carbon allotrope with pseudo-one-dimensional structure of the substrate. SOLUTION: The subject carbon allotrope is formed into a film by housing a graphite electrode 1 in the gas-blowing side connected to a gas-introducing system, and a graphite electrode 2 receiving a flow of the gas in a vacuum vessel, and generating a pinch plasma 3 in a flowing state of the rare gas (e.g. Ar) between a vacuum gap of the electrodes 1 and 2, to form the film on a substrate 35 arranged at the position facing to the plasma 3. Carbon atoms separated from the electrodes 1 and 2 by the pinch plasma 3 is irradiated as flying particles with radiation light 3A and forms the film 6 on the substrate 35. In the same way, carbon nitride is formed into the film on the substrate by generating the pinch plasma in a flowing state of N2 gas.

    HIGH-SPEED LARGE-CURRENT SWITCH
    9.
    发明专利

    公开(公告)号:JPH03116625A

    公开(公告)日:1991-05-17

    申请号:JP25470589

    申请日:1989-09-29

    Abstract: PURPOSE:To enable both interruption of current and closing of a circuit by means of one explosion by providing both an interrupting circuit and a closing circuit in the same device. CONSTITUTION:An upper conductor 3 comprises a current terminal 11A joined to the side of a metal plate portion 1 and a current terminal 11B joined to the side of a metal sheet portion 2 and a lower conductor 5 includes a current terminal 11C joined thereto and the metal plate portion and the lower conductor 5 constitute a current circuit. The upper conductor 3 is suddenly driven downward by detonation wave power generated by explosion of an explosive 9 and then the metal sheet portion 2 constituting the upper conductor 3 is cut off by the toothed portion of a seat 6. Thus a current flowing between the current terminals 11A,11B is interrupted via the metal sheet portion 2 at high speed and the metal plate portion 1 constituting the upper conductor 3 is deposited to the lower conductor 5 so that a making current is caused to flow between the current terminals 11A,11C at high speed.

Patent Agency Ranking