公开(公告)号：JPH11271191A

公开(公告)日：1999-10-05

申请号：JP7293098

申请日：1998-03-23

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ISHIDA YUKI ,  YOSHIDA SADAJI ,  OKUMURA HAJIME ,  TAKAHASHI TETSUO

IPC: G01N21/84 ,  G01N1/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To non-destructively and rapidly observe a crystal orientation and sphalerite type structure and a crystal defect (APD) by depositing a crystal with diamond type structure on a crystal surface with the sphalerite type structure and allowing an island crystal where the direction of dangling bond of the ground is reflected to grow anisotropically for visibility. SOLUTION: Gas is introduced from a gas supply means including a crystal atom in diamond type structure, a crystal in diamond type structure is deposited on a crystal surface in sphalerite type structure, and an island-shaped crystal where the direction of dangling bond of the ground is reflected is allowed to grow in an anisotropic direction for visibility. By observing the direction of a crystal Y in diamond type structure, the crystal orientation of a crystal AX in sphalerite type structure of the ground can be determined. More specifically, since the direction of the dangling bond on the uppermost surface of the crystal AX is perpendicular to a direction where the crystal Y is extended fully, the crystal orientation can be determined according to the shape of the crystal Y when the type of atom on the uppermost surface is known. Then, when APD exists on the surface, the APD can be determined according to the distribution on the shape of the crystal Y.

公开(公告)号：JP2001077030A

公开(公告)日：2001-03-23

申请号：JP24662999

申请日：1999-08-31

Applicant: SANYO ELECTRIC CO ,  AGENCY IND SCIENCE TECHN ,  HITACHI LTD ,  TOSHIBA CORP

Inventor： MASAHARA SHINOGI ,  ONO TOSHIYUKI ,  KUSHIBE MITSUHIRO ,  ISHIDA YUKI ,  TAKAHASHI TETSUO ,  SUZUKI TAKAYA

IPC: H01L21/302 ,  H01L21/205 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To flatten the surface of an SiC substrate by hydrogen etching. SOLUTION: After an SiC substrate 10 is set up in a reaction furnace 1, a hydrogen gas is introduced to the furnace 1. While the hydrogen gas is introduced, the substrate 10 is heated. When the etching of the substrate 10 is performed Since the etching of the surface of the substrate 10 is performed while the atmospheric pressure in the furnace 1 is maintained at