公开(公告)号：JPH11265853A

公开(公告)日：1999-09-28

申请号：JP14032198

申请日：1998-05-22

Applicant: MITSUBISHI MATERIALS CORP ,  ANGSTROM TECHN PARTNERSHIP ,  AGENCY IND SCIENCE TECHN

Inventor： NAKADA YOSHINOBU ,  OKUMURA HAJIME ,  IGO AKSENOV

IPC: C30B29/38 ,  H01L21/203 ,  H01L21/205 ,  H01L21/318 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/34

Abstract: PROBLEM TO BE SOLVED: To manufacture a light-emitting element having high luminous intensity, and at the same time, to relatively easily form a high quality flat nitride semiconductor layer, which is completely crystallized in a single crystal and has an extremely small number of crystal defects. SOLUTION: A hetero-epitaxial layer (silicon nitride layer) 12 which contains crystalline silicon nitride, amorphous silicon nitride, or silicon nitride in which amorphous and crystalline silicon nitrides are mixed and containing single crystals is formed on a single-crystal silicon substrate 11 to a thickness of 0.05-2,000 nm. Then a nitride semiconductor layer 13, such as gallium nitride layer, etc., is formed on the silicon nitride layer 12.

公开(公告)号：JPH07111242A

公开(公告)日：1995-04-25

申请号：JP27898193

申请日：1993-10-12

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME

IPC: H01L21/203 ,  C30B29/40

Abstract: PURPOSE:To form a fine structure free from crystal defects by substituting group V atoms of a part, which is irradiated by an electron beam, with irradiated group V atoms of a group V element source in elements comprising stabilized surfaces of group V in the topmost layer of a semiconductor film of a III-V compound. CONSTITUTION:While a GaAs film 11 which is a III-V compound is heated to a proper temperature short of the harmonic evaporation temperature, after an Sb beam of a group V element is applied to an As stabilized surface which is the topmost layer of the GaAs film 11, an electron beam 21 is applied only to a specified part according to a desired pattern. The As atoms are substituted with Sb atoms at the topmost layer As of the irradiated GaAs film 11. This makes only the substituted part a GaSb region 22 and a fine structure can be obtained.

公开(公告)号：JPH04316316A

公开(公告)日：1992-11-06

申请号：JP10970091

申请日：1991-04-15

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MIKI ICHIJI ,  SAKAMOTO KUNIHIRO ,  SAKAMOTO SUMINORI ,  MATSUHATA HIROFUMI ,  OKUMURA HAJIME ,  YOSHIDA SADAJI

IPC: H01L21/20

Abstract: PURPOSE:To obtain a method for growing crystal over a critical thickness with no restriction of the in-lane lattice constant on the surface of substrate crystal. CONSTITUTION:Superlattice crystal 4 composed of first and second constituent crystals 2, 3 is laminated over a critical thickness on a substrate crystal 1 to cause dislocation T therein thus growing crystal having in-plane lattice constant different from that of the substrate crystal 1.

公开(公告)号：JP2000150792A

公开(公告)日：2000-05-30

申请号：JP32009298

申请日：1998-11-11

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  OKUMURA HAJIME ,  NAGAI KIYOKO ,  SEKIKAWA TOSHIHIRO ,  FUKUDA KENJI

IPC: H01L27/04 ,  H01L21/318 ,  H01L21/324 ,  H01L21/822 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To improve the electric characteristic of a semiconductor device so that the device may have a high dielectric breakdown voltage and a low interfacial level density. SOLUTION: In a semiconductor device provided with a metallic layer formed on a semiconductor substrate containing silicon carbide in at least its uppermost layer through an insulator, the insulator is constituted by laminating an oxide film and/or a nitride film upon the lowermost aluminum nitride layer. In addition, after the insulator is formed on the semiconductor substrate or the metallic layer is formed on the insulator, hydrogen annealing or hydrogen plasma irradiation is performed.

公开(公告)号：JP2000068608A

公开(公告)日：2000-03-03

申请号：JP23684898

申请日：1998-08-24

Applicant: AGENCY IND SCIENCE TECHN

Inventor： SHIMIZU MITSUTOSHI ,  OKUMURA HAJIME ,  SHIRAKASHI JUNICHI ,  WATANABE MASANOBU

IPC: H01L21/308 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To enable wet etching with little damage by etching chemically stable gallium nitride using reactive pyrophosphoric acid. SOLUTION: A gallium nitride growing substrate, a holding device or the like are pre-heated to the same temperature as an etching temperature. Then the gallium nitride growing substrate is soaked in pyrophosphoric acid to be etched. Optimum time to soak should be calculated by pre-conditioning. A temperature of pyrophosphoric acid should be also calculated similarly. Pyrophosphoric acid can be obtained by dehydrating orthophosphoric acid which is usually used. Or it can be obtained by adding water of a suitable ratio to phosphorus oxide. In addition, sufficient etching speed can be obtained by raising the temperature of the pyrophosphoric acid to a high temperature ranging from 210 to 220 deg.C or higher. Then after the time required for etching, materials are taken out, and the pyrophosphoric acid remaining on surfaces is removed using pure water.

公开(公告)号：JPH11111617A

公开(公告)日：1999-04-23

申请号：JP27439997

申请日：1997-10-07

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME ,  YOSHIDA SADAJI

IPC: C30B23/08 ,  C30B29/38 ,  H01L21/203 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve the flatness of a surface by intermittently supplying radical beams. SOLUTION: The on/off duty of nitrogen radical beams, namely, the interrupting time Toff and the supplying time Ton of the nitrogen radical beams is specified desirably by in situ observation method. When one interruption and one supply are permitted to be one cycle, suitable number of times the cycle is to be repeated can be desirably known through the in situ observation method. When an analysis pattern from III nitride semiconductor film surface is a spot-shaped pattern, it is recognized that the flatness of the growing surface is not yet recovered. When the pattern changes to a streak pattern after several time intermittent application of nitrogen radical beams, the growing surface is discriminated to have been planarized satisfactorily. Once the flatness of the growing surface is recovered, the satisfactory flatness is generally maintained, even when the nitrogen radical beams are continuously supplied in addition to the group III elements.

公开(公告)号：JPH0297034A

公开(公告)日：1990-04-09

申请号：JP24949688

申请日：1988-10-03

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME ,  ENDO KAZUHIRO ,  MISAWA SHUNJI ,  SAKUMA EIICHIRO ,  YOSHIDA SADAJI

IPC: G01N23/00 ,  H01L21/66

Abstract: PURPOSE:To obtain a novel measurement enabling a specimen to be processed simply eliminating the process of pn junction or Schottky junction by a method wherein a semiconductor is irradiated with energy beam pulse at specified irradiation space for specified time and then the change with time of electric conductivity of the specimen from the time of stopping the irradiation is used as the input data for transient phenomenon analysis. CONSTITUTION:After irradiating a semiconductor specimen 10 with specified energy beam pulse Lp at specified irradiating space for specified time, the change with time DELTAsigma(t) of electric conductivity (b) of the specimen 1c from the time of stopping the irradiation of the said pulse Lp is sampled to use the change with time DELTAsigma(t) of the electric conductivity as the input data for transient phenomenon analysis. For example, the semiconductor specimen 10 as an object of measurement is held in a cryostat 12 maintaining a constant inner temperature conforming to the command from a computer serving both for control and analysis. Then, the semiconductor specimen 10 is irradiated with the pulse beams Lp in specified beam diameter and beams intensity (a) from a pulse beam source 14 and furthermore, if necessary, the pulse beams Lp overlap with continuous wave beams Ls emitted from a continous wave beam source 15 through the intermediary of a half-mirror 16.

公开(公告)号：JPH11271191A

公开(公告)日：1999-10-05

申请号：JP7293098

申请日：1998-03-23

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ISHIDA YUKI ,  YOSHIDA SADAJI ,  OKUMURA HAJIME ,  TAKAHASHI TETSUO

IPC: G01N21/84 ,  G01N1/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To non-destructively and rapidly observe a crystal orientation and sphalerite type structure and a crystal defect (APD) by depositing a crystal with diamond type structure on a crystal surface with the sphalerite type structure and allowing an island crystal where the direction of dangling bond of the ground is reflected to grow anisotropically for visibility. SOLUTION: Gas is introduced from a gas supply means including a crystal atom in diamond type structure, a crystal in diamond type structure is deposited on a crystal surface in sphalerite type structure, and an island-shaped crystal where the direction of dangling bond of the ground is reflected is allowed to grow in an anisotropic direction for visibility. By observing the direction of a crystal Y in diamond type structure, the crystal orientation of a crystal AX in sphalerite type structure of the ground can be determined. More specifically, since the direction of the dangling bond on the uppermost surface of the crystal AX is perpendicular to a direction where the crystal Y is extended fully, the crystal orientation can be determined according to the shape of the crystal Y when the type of atom on the uppermost surface is known. Then, when APD exists on the surface, the APD can be determined according to the distribution on the shape of the crystal Y.

公开(公告)号：JPH11150079A

公开(公告)日：1999-06-02

申请号：JP31488697

申请日：1997-11-17

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ARAI KAZUO ,  YOSHIDA SADAJI ,  TAGAMI HISAO ,  TANAKA YASUNORI ,  OKUMURA HAJIME

IPC: H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To implant ions at high doping ion flux, by allowing doping ions which cause electrical activity to be pulse a for ion implantation. SOLUTION: Pulse-like ion species generated by laser application, etc., are classified and accelerated for common ion implantation source together with doping pulse ion source. Timing is adjusted between implantation temperature and ion flux as well as state control pulse flux and doping ion pulse, for optimizing. Further, a pulse ion implantation and irradiation of excited control pulse train are coupled. Further, micro implantation condition control is performed for the doping ion, allowing optimum control of a dopant in electrical activity.

公开(公告)号：JPH10242055A

公开(公告)日：1998-09-11

申请号：JP4200397

申请日：1997-02-26

Applicant: AGENCY IND SCIENCE TECHN ,  MITSUBISHI MATERIALS CORP

Inventor： NAKADA YOSHINOBU ,  OKUMURA HAJIME

IPC: H01L21/205 ,  H01L21/203

Abstract: PROBLEM TO BE SOLVED: To grow a nitride semiconductor thin film of high perfection, and form a hetero epitaxial thin film in the atomic order, by forming a film of non-nitride component of nitride semiconductor to be in a specified thickness, on a semiconductor wafer, making the film a barrier layer, and forming a film of nitride semiconductor on the barrier layer. SOLUTION: By a sputtering method, Ga is vapor-deposited to be in thickness of 0.05-5 atomic layer on the surface of a silicon wafer 1, i.e., the device forming region side. The wafer is maintained at, e.g. 400 deg.C for 5 minutes. A low temperature growth layer (buffer layer) 3 of nitride semiconductor GaN is grown to be 100Å thick at a substrate temperature of, e.g. 400 deg.C. The substrate temperature is raised up to, e.g. 700 deg.C, and annealing is performed for 10 minutes. A film of nitride semiconductor GaN is formed, and a nitride semiconductor layer 4 is formed. Thereby amorphous silicon nitride is not formed between the silicon wafer 1 and the low temperature growth layer 3, so that the density of lattice defect 5 is remarkably reduced.