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    Magnetic inductive semiconductor device
    1.
    发明授权
    Magnetic inductive semiconductor device 失效
    磁感应半导体器件

    公开(公告)号：US3560806A

    公开(公告)日：1971-02-02

    申请号：US3560806D

    申请日：1968-01-16

    Applicant: AGENCY IND SCIENCE TECHN

    Inventor： KATAOKA SHOEI ,  YAMADA HIDEO ,  IIDA SHOSAN ,  FUJISADA HIROYUKI

    IPC: H01F5/00 ,  H01L43/06 ,  H01L15/00

    CPC classification number: H01F5/00 ,  H01L43/06

    Abstract: A solid state inductive device comprises either a sandwich of a N-type and a P-type semiconductor with an insulating layer therebetween, or a semiconductor and a plurality of metal strips with a dielectric layer therebetween. A current electrode is connected to the opposite ends of the semiconductor and interconnect the semiconductors in the first embodiment, the metal strips being angular to the direction of the electrodes in the second embodiment. The device forms an inductive reactance between the electrodes upon application of a magnetic field in an angular direction to a side of the device.

    2.
    发明专利
    未知

    公开(公告)号：DE1274383B

    公开(公告)日：1968-08-01

    申请号：DEA0042763

    申请日：1963-03-29

    Applicant: AGENCY IND SCIENCE TECHN

    Inventor： KATAOKA SHOEI ,  YAMADA HIDEO ,  KOBAYASHI SHINTARO

    IPC: G06G7/162 ,  G06G7/20 ,  G06G7/22

    Abstract: 1,044,332. Magnetically-variable resistors. AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY, MINISTRY OF INTERNATIONAL TRADE AND INDUSTRY. A pril 1, 1963 [June 30, 1962], No. 23261/66. Divided out of 1,044,331 Heading H1K. [Also in Divisions G1 and G4] An electric analogue computing device comprises a thin semi-conductor wafer rotatable with respect to a magnetic field and exhibiting a magneto-resistance effect to give an output proportional to sin 2 # or cos 2 #, where # represents the angle of rotation relative to a datum axis. The wafer should have a thickness less than 1/ 100 of its width and may be an intermetallic compound formed by vacuum deposition. With weak magnetic fields the change in resistance is proportional to the square of the normal component of the field, which may be either unidirectional or alternating.

    5.
    发明专利
    未知

    公开(公告)号：DE2241056A1

    公开(公告)日：1973-02-22

    申请号：DE2241056

    申请日：1972-08-21

    Applicant: AGENCY IND SCIENCE TECHN

    Inventor： KATAOKA SHOEI

    IPC: G01R33/07 ,  G01R33/09 ,  G11B5/37 ,  G01R33/02

    Abstract: The invention disclosed provides a semiconductor device and method whereby an inverted magnetic field such as a magnetic bubble is detected by placing the semiconductor device having at least two electrodes on a magnetic body, allowing a filamentary or plasma current to sweep in the semiconductor from a first input electrode, confining the filamentary current at the boundary of a detected inverted magnetic field, and detecting the position of the inverted magnetic field by means of an output electrode through which the filamentary or plasma current flows.

    NEGATIVE RESISTANCE ELEMENT AND ITS APPLICATION
    9.
    发明专利
    NEGATIVE RESISTANCE ELEMENT AND ITS APPLICATION 未知

    公开(公告)号：GB1242731A

    公开(公告)日：1971-08-11

    申请号：GB4019968

    申请日：1968-08-22

    Applicant: AGENCY IND SCIENCE TECHN

    Inventor： KATAOKA SHOEI ,  TATENO HIROSHI ,  FUJISADA HIROYUKI ,  YAMADA HIDEO ,  KAWASHIMA MITSUO ,  KOMAMIYA YASUO

    IPC: H01L47/00

    Abstract: 1,242,731. Bulk negative reistance device. JAPAN, AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY MINISTRY OF INTERNATIONAL TRADE & INDUSTRY. 22 Aug., 1968 [22 Aug., 1967; 27 Nov., 1967 (4); 29 Nov., 1967; 26 Dec., 1967; 8 March, 1968 (5); 21 March, 1968; 23 April, 1968; 5 July, 1968], No. 40199/68. Heading H1K. A bulk negative-resistance device consists of a two valley semi-conductor with ohmic electrodes adjacent its ends and a layer of high dielectric constant insulation disposed on the body between the ohmic electrodes. This serves to prevent the formation of high field domains in the body. Typically the body is of gallium arsenide and the insulation barium titanate. The body may be flat with insulation formed on or inset in one or both faces, a rod surrounded by a sleeve of insulation or a Y- or H-shaped member of circular or laminar cross-section with an ohmic contact at the end of each arm. Preferably the insulation extends into contact with the ohmic contacts and in this case to prevent the output being shunted through it the insulation may be divided by one or more lateral slots. Instead of extending the insulation in the above manner the cross-section of the ends of the body adjacent the cathode or both ohmic contacts may be increased by a gradual or stepwise increase in thickness or width of the body there. In all cases a fixed D.C. bias is applied between the terminal ohmic contacts and the input signal fed to one contact and output taken from the other. Alternatively capacitive or waveguide input and output arrangements are provided adjacent these contacts. For higher power a parallel-connected stack of devices with common electrodes is used. One or more control electrodes may be disposed on each discrete area of insulation in any of the above configurations. A device adapted for insertion between the conductors of a strip transmission line is also described. In this case, with the device acting as an amplifier the amplification is determined by the length of the body and electron density. To achieve higher amplification factors for a given applied voltage a plurality of devices may be mounted in series along the strip line, mutually spaced by layers of insulation. The ends of the body are preferably tapered to reduce reflections at the semiconductor air interfaces.

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