公开(公告)号：DE1764870A1

公开(公告)日：1972-08-03

申请号：DE1764870

申请日：1968-08-22

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KATAOKA SHOEI ,  TATENO HIROSHI ,  FUJISADA HIROYUKI ,  YAMADA HIDEO ,  KAWASHIMA MITSUO ,  KOMAMIYA YASUO

IPC: F16C33/10 ,  H01L47/00 ,  H01L47/02 ,  H01L

公开(公告)号：GB1242731A

公开(公告)日：1971-08-11

申请号：GB4019968

申请日：1968-08-22

Applicant: AGENCY IND SCIENCE TECHN

Inventor： KATAOKA SHOEI ,  TATENO HIROSHI ,  FUJISADA HIROYUKI ,  YAMADA HIDEO ,  KAWASHIMA MITSUO ,  KOMAMIYA YASUO

IPC: H01L47/00

Abstract: 1,242,731. Bulk negative reistance device. JAPAN, AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY MINISTRY OF INTERNATIONAL TRADE & INDUSTRY. 22 Aug., 1968 [22 Aug., 1967; 27 Nov., 1967 (4); 29 Nov., 1967; 26 Dec., 1967; 8 March, 1968 (5); 21 March, 1968; 23 April, 1968; 5 July, 1968], No. 40199/68. Heading H1K. A bulk negative-resistance device consists of a two valley semi-conductor with ohmic electrodes adjacent its ends and a layer of high dielectric constant insulation disposed on the body between the ohmic electrodes. This serves to prevent the formation of high field domains in the body. Typically the body is of gallium arsenide and the insulation barium titanate. The body may be flat with insulation formed on or inset in one or both faces, a rod surrounded by a sleeve of insulation or a Y- or H-shaped member of circular or laminar cross-section with an ohmic contact at the end of each arm. Preferably the insulation extends into contact with the ohmic contacts and in this case to prevent the output being shunted through it the insulation may be divided by one or more lateral slots. Instead of extending the insulation in the above manner the cross-section of the ends of the body adjacent the cathode or both ohmic contacts may be increased by a gradual or stepwise increase in thickness or width of the body there. In all cases a fixed D.C. bias is applied between the terminal ohmic contacts and the input signal fed to one contact and output taken from the other. Alternatively capacitive or waveguide input and output arrangements are provided adjacent these contacts. For higher power a parallel-connected stack of devices with common electrodes is used. One or more control electrodes may be disposed on each discrete area of insulation in any of the above configurations. A device adapted for insertion between the conductors of a strip transmission line is also described. In this case, with the device acting as an amplifier the amplification is determined by the length of the body and electron density. To achieve higher amplification factors for a given applied voltage a plurality of devices may be mounted in series along the strip line, mutually spaced by layers of insulation. The ends of the body are preferably tapered to reduce reflections at the semiconductor air interfaces.

公开(公告)号：JPS61227164A

公开(公告)日：1986-10-09

申请号：JP6813085

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: C23C14/30 ,  C23C14/54 ,  C30B23/08 ,  C30B29/68 ,  C30B33/00

Abstract: PURPOSE:To evaporate the extra-thin film layer on the surface of a solid material precisely and exactly by controlling the evaporation of the material on the surface of the solid material in synchronization with the change of the intensity of the reflected electron rays, etc., of the electron rays made incident on the solid material in order to evaporate said material. CONSTITUTION:The electron rays 3 are made incident from an electron gun 2 on the surface of a substrate 1 in a vacuum vessel 36 to evaporate the substrate 1. The intensity of the reflected, diffracted and scattered electron rays 4, 5, 6 generated on the surface of the substrate 1 in this stage is detected with a photodetector 11 provided with a fluorescent screen, an ammeter 25 provided with an electron multiplier 24, etc., or the absorbing current flowing in the substrate 1 is detected by an ammeter 23 and is inputted to a computer 13 via an A/D converter 12. The computer adjusts a light source 27, ion gun 30, electron gun 32, molecular ray generating cell 34, shutter 17, heater 20, etc., for the above-mentioned substrate 1 via a controller 14 in synchronization with the time change of the detected value thereby controlling precisely the evaporation of the material on the surface of the substrate 1.

公开(公告)号：JPS61225625A

公开(公告)日：1986-10-07

申请号：JP6813185

申请日：1985-03-29

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OOTA KIMIHIRO ,  KOJIMA TAKESHI ,  KAWAI NAOYUKI ,  NAKAGAWA ITARU ,  SAKAMOTO SUMINORI ,  KAWASHIMA MITSUO

IPC: G01K11/00 ,  G01K11/30

Abstract: PURPOSE:To measure the surface temperature of solid material accurately with a better reproducibility, by detecting hourly changes in the intensity of electron reflected, diffracted or scattered on the surface of the solid material or the cycle of hourly changes in the absorption current flowing through the solid material. CONSTITUTION:An incident electron beam 11 from an electron gun 10 is reflected, diffracted or scattered on the surface of a substrate and the reflected electron beam and the diffracted electron beam obtained in a proper direction projects spot images on a fluorescent screen 12. These spot images are formed on an X-Y stage 14 with a camera or a lens 13 and one thereof is supplied to a photodetector 16 through an optical fiber 15 from the stage 14 to record the hourly changes in the output thereof by observing with a recorder 17. It is already discovered that the intensity of the specular spot in which the normal reflection highest in the intensity among those of the diffracted images is overlapped with the 0-order Laue point vibrates during the grow of crystal but the vibration thereof continues even after the growth is stopped. The relationship between the cycle of the vibration after the stoppage of the growth and the substrate temperature is memorized into a computer to be compared with the actually measured cycle, thereby enabling automatic measurement of temperature.