OPTICAL MODULATOR
    1.
    发明专利

    公开(公告)号:JPH11326853A

    公开(公告)日:1999-11-26

    申请号:JP13522898

    申请日:1998-05-18

    Abstract: PROBLEM TO BE SOLVED: To provide an optical modulator generating a strong electric field in an electro-optic crystal waveguide with a small applied voltage and producing a large change in a refractive index of light, and a manufacturing method thereof. SOLUTION: A modulation voltage is reduced by a structure to holding an optical waveguide 1 between upper and lower modulation electrodes 4, 6, 7 and arranging it so that all the components of an applied electric field contribute to the electro-optical effect. Normally, since a waveguide having the electro- optical effect is crystal, a metal material cannot be used as the lower electrode. Therefore, the structure is achieved by adopting a conductive crystal material as the lower electrode 4, and letting waveguide crystal grow hetero-epitaxially thereon.

    PROCESS AND APPARATUS FOR PRODUCTION OF OPTICAL WAVEGUIDE

    公开(公告)号:JPH06337320A

    公开(公告)日:1994-12-06

    申请号:JP14863993

    申请日:1993-05-27

    Abstract: PURPOSE:To three-dimensionally produce optical waveguides within a photosensitive layer in order to improve the scale of integration of optical integrated circuits. CONSTITUTION:A body 1 which is to be exposed and is formed by providing the surface of a substrate 1a with the photosensitive layer 1b consisting of a photosensitive material, such as photopolymer, which is changed in refractive index of a photosensitive part by photoirradiation and can immobilize this photosensitive part is set on an X-Y-Z stage 2 and a laser beam is condensed to a converging light by a lens system 7. The focal position of this light is moved relative to the photosensitive layer 1b, by which the photosensitive part 1c is formed. An optical waveguide pattern 1d is formed by immobilizing this part.

    SEMICONDUCTOR LASER AND ITS OPERATION

    公开(公告)号:JPH0653610A

    公开(公告)日:1994-02-25

    申请号:JP25965691

    申请日:1991-09-11

    Abstract: PURPOSE:To generate crossing mode and also, changing the light output ratio by the adjustment of its gain difference so as to improve the output ratio, in the case that the length of a laser resonator is longer than the length of the coupled two waveguide paths, by making the gain of the clad between anodes enough larger than the outer clad. CONSTITUTION:An n-GaAs layer 2, an n-AlGaAs layer 3, a GaAs active layer 4, a p-AlGaAs 5, a p-GaAs layer 6, and an SiN insulating layer 7 are forming order on a GaAs substrate 1. Waveguide paths parallel with each other are formed below two parallel electrodes 10 and 11. To generate crossing mode in the case that a resonator L is longer than the coupled length Lc of the two waveguide paths, that is, in case that L>Lc, the gain of an even analogous mode needs to be raised. To raise the gain of the even analogous mode, it is required only to raise the gain of the clad area C between anodes higher than especially outer clad areas A and E, whereby it is made into a mesa structure, and the active layer is made uniform GaAs.

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