公开(公告)号：JP2000114561A

公开(公告)日：2000-04-21

申请号：JP28749498

申请日：1998-10-09

Applicant: AGENCY IND SCIENCE TECHN

Inventor： NIKI SAKAE ,  YAMADA AKIMASA ,  PAUL FONS ,  OYANAGI HIROYUKI

IPC: H01L31/04 ,  H01L31/032

Abstract: PROBLEM TO BE SOLVED: To prevent occurrence of point defects (multiple voids) or laminate defects such as crystal twin, etc., caused in thin films to improve quality as well as enable lower temperature treatment and simplification of the manufacturing method. SOLUTION: A glass substrate 2 on which a rear-surface electrode 3 is formed is disposed in a vacuum tank 7 and a Cuα(InxGa1-x)β(SeyS1-y)γ thin film 4 is formed on the rear-surface electrode 3 on the glass substrate 2 by vapor- depositing or sputtering Cu, In, Ga, Se and S from a supply source 8. At this time, steam is irradiated onto the rear-surface electrode 3 on the glass substrate 2 from a supply source 9 to supply water or hydroxy group. Anion voids generated during the formation of the thin film are filled with oxygen so that generation of anion voids and multiple voids of cation-anion are prevented and the density of the twins correlating with anion voids is reduced.

公开(公告)号：JP2001044500A

公开(公告)日：2001-02-16

申请号：JP21122399

申请日：1999-07-26

Applicant: AGENCY IND SCIENCE TECHN ,  ROHM CO LTD

Inventor： NIKI SAKAE ,  PAUL FONSU ,  IWATA HIROYA ,  TANABE TETSUHIRO ,  NAKAHARA TAKESHI

IPC: H01L21/363 ,  H01L21/365 ,  H01L33/14 ,  H01L33/16 ,  H01L33/28 ,  H01L33/42 ,  H01L37/02 ,  H01L41/316 ,  H01L41/39 ,  H01S5/327 ,  H01L33/00 ,  H01L41/24

Abstract: PROBLEM TO BE SOLVED: To provide an element that obtains a ZnO-family compound semiconductor with superior crystallizability, and uses the ZnO-family compound semiconductor such as a semiconductor light-emitting device, where the characteristics of the element have been improved. SOLUTION: A ZnO-family compound semiconductor layer 2 is subjected to epitaxial growth on the main surface (A surface) of a sapphire substrate 1, using a surface orthogonally crossing the horizontal surface of the sapphire substrate 1, for example, the A surface (11-20) as the main surface. When a semiconductor light-emitting device is to be constituted lamination is successively made so that a light emission layer formation part for pinching an active layer with smaller band gap than a clad layer is composed of an n-type cladding layer consisting of, for example, the ZnO compound semiconductor layer and a p-type cladding layer.

公开(公告)号：JP2001044499A

公开(公告)日：2001-02-16

申请号：JP21122299

申请日：1999-07-26

Applicant: AGENCY IND SCIENCE TECHN ,  ROHM CO LTD

Inventor： NIKI SAKAE ,  IWATA HIROYA ,  PAUL FONSU ,  TANABE TETSUHIRO ,  TAKASU HIDESHI

IPC: H01L33/14 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34 ,  H01L33/42 ,  H01L33/62 ,  H01S5/00 ,  H01S5/327 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and its manufacturing method that use a ZnO-family compound semiconductor, are a vertical type that can take out an electrode from the upper and lower surfaces of a chip, having superior crystallinity of a semiconductor layer and high light emission efficiency, at the same time, which do not use a sapphire substrate, and are convenient in a manufacturing process and use. SOLUTION: A silicon nitride film 2 is provided on the surface of a silicon substrate 1, at least n-type and p-type layers 3 and 4 and 6 and 7 consisting of a ZnO-family compound semiconductor are provided on the silicon nitride film 2, and a semiconductor lamination part 11 is laminated, so that a light emission layer is formed. The silicon nitride film 2 is preferably subjected to heat treatment under atmosphere, where nitrogen as an ammonia gas exists for forming.

公开(公告)号：JPH11326853A

公开(公告)日：1999-11-26

申请号：JP13522898

申请日：1998-05-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MATSUBARA KOJI ,  WATANABE MASANOBU ,  NIKI SAKAE

IPC: G02B6/12 ,  G02B6/13 ,  G02F1/035

Abstract: PROBLEM TO BE SOLVED: To provide an optical modulator generating a strong electric field in an electro-optic crystal waveguide with a small applied voltage and producing a large change in a refractive index of light, and a manufacturing method thereof. SOLUTION: A modulation voltage is reduced by a structure to holding an optical waveguide 1 between upper and lower modulation electrodes 4, 6, 7 and arranging it so that all the components of an applied electric field contribute to the electro-optical effect. Normally, since a waveguide having the electro- optical effect is crystal, a metal material cannot be used as the lower electrode. Therefore, the structure is achieved by adopting a conductive crystal material as the lower electrode 4, and letting waveguide crystal grow hetero-epitaxially thereon.