公开(公告)号：JP2000114561A

公开(公告)日：2000-04-21

申请号：JP28749498

申请日：1998-10-09

Applicant: AGENCY IND SCIENCE TECHN

Inventor： NIKI SAKAE ,  YAMADA AKIMASA ,  PAUL FONS ,  OYANAGI HIROYUKI

IPC: H01L31/04 ,  H01L31/032

Abstract: PROBLEM TO BE SOLVED: To prevent occurrence of point defects (multiple voids) or laminate defects such as crystal twin, etc., caused in thin films to improve quality as well as enable lower temperature treatment and simplification of the manufacturing method. SOLUTION: A glass substrate 2 on which a rear-surface electrode 3 is formed is disposed in a vacuum tank 7 and a Cuα(InxGa1-x)β(SeyS1-y)γ thin film 4 is formed on the rear-surface electrode 3 on the glass substrate 2 by vapor- depositing or sputtering Cu, In, Ga, Se and S from a supply source 8. At this time, steam is irradiated onto the rear-surface electrode 3 on the glass substrate 2 from a supply source 9 to supply water or hydroxy group. Anion voids generated during the formation of the thin film are filled with oxygen so that generation of anion voids and multiple voids of cation-anion are prevented and the density of the twins correlating with anion voids is reduced.