公开(公告)号：JPH0297034A

公开(公告)日：1990-04-09

申请号：JP24949688

申请日：1988-10-03

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMURA HAJIME ,  ENDO KAZUHIRO ,  MISAWA SHUNJI ,  SAKUMA EIICHIRO ,  YOSHIDA SADAJI

IPC: G01N23/00 ,  H01L21/66

Abstract: PURPOSE:To obtain a novel measurement enabling a specimen to be processed simply eliminating the process of pn junction or Schottky junction by a method wherein a semiconductor is irradiated with energy beam pulse at specified irradiation space for specified time and then the change with time of electric conductivity of the specimen from the time of stopping the irradiation is used as the input data for transient phenomenon analysis. CONSTITUTION:After irradiating a semiconductor specimen 10 with specified energy beam pulse Lp at specified irradiating space for specified time, the change with time DELTAsigma(t) of electric conductivity (b) of the specimen 1c from the time of stopping the irradiation of the said pulse Lp is sampled to use the change with time DELTAsigma(t) of the electric conductivity as the input data for transient phenomenon analysis. For example, the semiconductor specimen 10 as an object of measurement is held in a cryostat 12 maintaining a constant inner temperature conforming to the command from a computer serving both for control and analysis. Then, the semiconductor specimen 10 is irradiated with the pulse beams Lp in specified beam diameter and beams intensity (a) from a pulse beam source 14 and furthermore, if necessary, the pulse beams Lp overlap with continuous wave beams Ls emitted from a continous wave beam source 15 through the intermediary of a half-mirror 16.

公开(公告)号：JPS62138398A

公开(公告)日：1987-06-22

申请号：JP28053285

申请日：1985-12-13

Applicant: AGENCY IND SCIENCE TECHN

Inventor： YOSHIDA SADAJI ,  ENDO KAZUHIRO ,  SAKUMA EIICHIRO ,  MISAWA SHUNJI

IPC: H01L21/205 ,  C30B25/02 ,  C30B29/36

Abstract: PURPOSE:To effectively grow a large-area silicon carbide single crystal film of good quality having uniform film thickness by carrying out the growth under reduced pressure when the silicon carbide single crystal film is formed by chemical vapor growth. CONSTITUTION:A single crystal substrate 4 is arranged on a substrate heater 3 in a reaction vessel 1. The inside of the reaction vessel 1 is firstly evacuated to a high vacuum by a pump 5, then hydrogen carrier gas and hydrogen-diluted gaseous propane are introduced through a pipe 2, and a valve 6 is controlled to keep the pressure in the reaction vessel 1 at a specified vacuum. Then the substrate 4 is heated by the heater 3, hydrogen-diluted gaseous silane and hydrogen-diluted gaseous propane are introduced, and a silicon carbide single crystal is grown on the substrate 4. Consequently, since chemical vapor growth is carried out while the inside of the reaction vessel 1 is evacuated, the diffusion coefficient of the gas is increased, the film growth on the surface becomes a rate-determining step, and uniform film thickness can be obtained.

公开(公告)号：JPS62209856A

公开(公告)日：1987-09-16

申请号：JP5232186

申请日：1986-03-10

Applicant: AGENCY IND SCIENCE TECHN

Inventor： YOSHIDA SADAJI ,  SAKUMA EIICHIRO ,  ENDO KAZUHIRO ,  MISAWA SHUNJI

IPC: H01L29/43 ,  H01L21/04 ,  H01L21/28 ,  H01L21/338 ,  H01L29/24 ,  H01L29/47 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

Abstract: PURPOSE:To provide an ohmic electrode having excellent heat resistance by composing a source electrode and a drain electrode of an aluminum material and composing a gate electrode of an Au material. CONSTITUTION:A p-type 3C-SiC single crystal film 2 is obtained on a p-type silicon substrate 1, and a non-doped n-type 3C-SiC single crystal layer 3 is then epitaxially grown. Then, after the surface of the layer 3 is sequentially etched with 5%-HF, 20%-K2CO3, HCl, 5%-HF, aluminum is deposited in vacuum to form a source electrode 4 and a drain electrode 5, Au is further deposited in vacuum to form a gate electrode 6. A separating region 7 is eventually formed by etching as an MESFET. Thus, a preferably ohmic contact is obtained without annealing by high temperature treating to eliminate the damage of the gate electrode.

公开(公告)号：JPS62209855A

公开(公告)日：1987-09-16

申请号：JP5232086

申请日：1986-03-10

Applicant: AGENCY IND SCIENCE TECHN

Inventor： YOSHIDA SADAJI ,  SAKUMA EIICHIRO ,  ENDO KAZUHIRO ,  MISAWA SHUNJI

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/337 ,  H01L21/338 ,  H01L29/24 ,  H01L29/47 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872

Abstract: PURPOSE:To provide a p-n junction electrode having excellent heat resistance by employing as the p-type electrode of a diode or the gate electrode of a field-effect transistor an aluminum electrode or an alloy electrode of aluminum and silicon. CONSTITUTION:A non-doped n-type 3C silicon carbide single crystal film 2 is epitaxially grown on a p-type silicon substrate 1, and an aluminum film 3A and a silicon film 3B are then deposited in vacuum. Nickel film electrodes 4', 5' are deposited in vacuum on both sides of the films 3A, 3B and thermally annealed in vacuum to obtain N-type ohmic electrodes 4, 5. A diode is formed in combination of the electrodes, 3, 4 or 3, 5, and a junction type field-effect transistor is operated in combination of the electrode 3A as a gate electrode, the electrode 4 as a source electrode and the electrode 5 as a drain electrode. Thus, a semiconductor element having high heat resistance is obtained to be proper as an electronic element or a photoelectric element which is operated under wrong influence of high temperature and the like.