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公开(公告)号：JPH04320067A
公开(公告)日：1992-11-10
申请号：JP11218591
申请日：1991-04-18
Applicant: AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , OUME KOSUMOSU DENKI KK
Inventor： HAYASHI YUTAKA , SATO MASAAKI , MAEYASHIKI YOSHIKI
IPC: H01L29/74 , H01L27/06 , H01L29/861
Abstract: PURPOSE:To obtain a surge protective device suitable for absorbing unipolarity surge by increasing a sectional size along a surface direction of an ohmic contact region larger than a size in which a current concentrically flows in or out of the contact region. CONSTITUTION:An electron current fe flowing through an ohmic contact region concentrically flows to a part along a fourth semiconductor region 24 at a stage before the region 24 is forward-biased. As a result, even if a width XS of the ohmic contact region is varied in a range in which a width XS of an actual ohmic contact region 30 is larger than XF at the center of the current fe, a breakover current, a holding current of a device do not considerably vary with respect to the width XF.
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公开(公告)号：JPS63205316A
公开(公告)日：1988-08-24
申请号：JP3681687
申请日：1987-02-19
Applicant: AGENCY IND SCIENCE TECHN
Inventor： TANAKA SUSUMU , SATO MASAAKI , KAERIYAMA KYOJI , SUDA MASAO , HIRAIDE TAKAO
Abstract: PURPOSE:To obtain a specified thiophene polymer in a neutral state and an organic semiconductor in the form a film which is excellent in heat resistance and smoothness, stable in air and useful as a display material and can be obtained without molding, by doping said polymer with an anion. CONSTITUTION:A compound of formula I, for example, synthesized by adding a Grignard reagent obtained by, for example, reacting 2-bromothiophene with metallic Mg to 2,5-dibromothiazole and condensing the mixture together with a supporting electrolyte comprising an anion-forming substance such as tetrafluoroborate, perchlorate, hexafluorophosphate, halide, SO4 or trifluoroacetate ion is electrolytically polymerized in a polar solvent such as propylene carbonate by using gold, platinum or the like as an electrode at a controlled electric quantity in an inert atmosphere. In this way, an anion-doped thiophene of repeating units of formula II (wherein R is a group of formula III, IV or V) having an electric conductivity of 10 -10 S/cm and a desired film thickness can be obtained. If desired, this polymer is converted into a thiophene polymer in a neutral state by removing the dopant by reversing the polarity.
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公开(公告)号：JPS62154776A
公开(公告)日：1987-07-09
申请号：JP29296985
申请日：1985-12-27
Inventor： HAYASHI YUTAKA , SATO MASAAKI , MURAMATSU YUJI , YOSHIHARA HIROAKI , HASEGAWA TEIJI
IPC: H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/74 , H01L29/861
Abstract: PURPOSE:To obtain an element, by which an arbitrary breakdown voltage is obtained with good design property and a large current can be absorbed with a dynamic current phenomenon being suppressed, by absorbing a surge current by punch through between specified semiconductor regions, and controlling a holding current in a recombination region. CONSTITUTION:On the main surface side of a first semiconductor region (first conductivity type) 1, a second semiconductor region (reverse conductivity type), which forms a p-n junction diode, is provided. A third region 3 is contacted with the region 2 at its side opposite to the side of the region 1. Thus the region 3 specifies the effective thickness of the region 2. A fourth semiconductor region (reverse conductivity type) 4 is separated from the region 2 in the lateral direction and forms an implanted junction together with the region 1. A carrier recombination region 1R is provided at either or both of the following parts: a part between the regions 2 and 4 on said one surface side of the region 1; and at least parts beneath the region 2 and the region 4 at the back surface of the region 1. A surge current is generated by punch through between the region 1 and the region 3 when a depletion layer yielded by a reverse bias to said p-n junction diode reaches the region 3. With the surge current being absorbed, a holding current is controlled with the recombination region 1R.
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公开(公告)号：JPS61209223A
公开(公告)日：1986-09-17
申请号：JP4681685
申请日：1985-03-09
Applicant: AGENCY IND SCIENCE TECHN
Inventor： SATO MASAAKI , TANAKA SUSUMU , KAERIYAMA KYOJI , SUDA MASAO
Abstract: PURPOSE:To obtain an electrically conductive polymer composition having high electrical conductivity and composed of poly-[2,5-(3-ethylthienylene)] doped with an anion and obtained by the electrolytic polymerization of 3-ethylthiophene in a medium containing an anion-containing supporting electrolyte. CONSTITUTION:An electrically conductive polymer composition composed of poly[2,5-(3-ethylthienylene)] doped with an anion (preferably hexafluorophosphoric acid ion, etc.) and having an electrical conductivity of 150-270S/cm can be produced by the electrolytic polymerization of 3- ethylthiophene in a medium (preferably propylene carbonate) containing an anion-containing supporting electrolyte, preferably in an inert atmosphere. USE:Electronic device, polymeric material, etc.
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公开(公告)号：JPH02255717A
公开(公告)日：1990-10-16
申请号：JP7750689
申请日：1989-03-29
Applicant: AGENCY IND SCIENCE TECHN
Inventor： SATO MASAAKI , YAMAUCHI AIZO
Abstract: PURPOSE:To obtain a thiophene-based copolymer, having high electric conductivity, soluble in solvents and having excellent moldability by electrolytically copolymerizing a specific alkylthiophene in a supporting electrolyte-containing solvent and then electrolytically reducing the resultant copolymer. CONSTITUTION:(B) 3-n-Dodecylthiophene and 3-methylthiophene are electrolytically polymerized in (A) a solvent containing a supporting electrolyte and the resultant polymer is than electrolytically reduced to afford a 3-n- dodecylthiophene-3-methylthiophene copolymer, having recurring units expressed by formulas I and II randomly oriented in a straight-chain form and containing 34-65mol% recurring units expressed by formula II with 60000-100000 weight- average molecular weight.
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Patent Agency Ranking
公开(公告)号：JPS6265383A
公开(公告)日：1987-03-24
申请号：JP20344885
申请日：1985-09-17
Inventor： HAYASHI YUTAKA , SATO MASAAKI , YOSHIHARA HIROAKI
IPC: H01L29/86 , H01L29/66 , H01L29/861 , H01L29/866 , H02H9/04
Abstract: PURPOSE:To make the control of breakdown voltage and clamp voltage considerably simple and highly accurate by absorbing a surge current by punch-through between a first semiconductor region and a third region and specifying a clamp voltage by a breakdown voltage of a rectifying junction between a fourth and a fifth regions. CONSTITUTION:When a reverse bias is applied to a p-n junction between a first semiconductor region 1 and a second semiconductor region 2, a produced depletion layer reaches a third region 3 and a punch-through state starts. When the product of an element current and a resistance of the second semiconductor region 3 sandwiched with the third region 3 and the first region 1 becomes equal to a forward voltage of the p-n junction diode composed of the regions 2 and 3, positive feedback phenomenon occurs. Accordingly, a clamp voltage as an element becomes the seem of a breakdown voltage in a rectifying junction of the fourth and fifth semiconductor regions 4 and 5 and a low voltage between the third and fourth regions and if an impurity concentration of the fourth semiconductor region 4 is properly determined, it can be determined arbitralily.
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公开(公告)号：JPS6265382A
公开(公告)日：1987-03-24
申请号：JP20344785
申请日：1985-09-17
Inventor： HAYASHI YUTAKA , SATO MASAAKI , YOSHIHARA HIROAKI
IPC: H01L29/86 , H01L29/66 , H01L29/861 , H01L29/866 , H02H9/04
Abstract: PURPOSE:To obtain a surge absorbing element of different breakdown voltage also from wafer of the same material constant by arranging a third region in a second semiconductor region forming a p-n junction diode with a first semiconductor region, which is in contact with the region 2 from the opposite side to the first region, so as to absorb a surge current by punch-through be tween the first semiconductor region and the third region. CONSTITUTION:A semiconductor substrate is used as a first semiconductor region 1 of first conductive type as it is and on one side of its two surfaces, a second semiconductor region 2 and a third semiconductor region are formed in order by double diffusion technique. Meanwhile, a fourth regin 4 is formed laterally and separated from the second semiconductor region 2. When a p-n junction between the first semiconductor region 1 and the second semiconductor region 2 are reverse biased, a depletion layer extends to not only the side of first semiconductor region 1 but the side of third region 3. When the depletion layer reaches the third region 3, a punch-through state starts between the first semiconductor region 1 and the third region 3 and a breakdown state for a surge absorbing element starts.
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公开(公告)号：JPS61209224A
公开(公告)日：1986-09-17
申请号：JP4681885
申请日：1985-03-09
Applicant: AGENCY IND SCIENCE TECHN
Inventor： SATO MASAAKI , TANAKA SUSUMU , KAERIYAMA KYOJI , SUDA MASAO
Abstract: PURPOSE:To produce novel poly-[2,5-(3-ethylthienylene)] useful as electronic devices, polymeric materials, optical materials, etc., by carrying out the electrolytic polymerization of 3-ethylthiophene, and subjecting the product to electrolytic reduction. CONSTITUTION:3-Ethylthiophene is subjected to the electrolytic polymerization in a solvent (e.g. propylene carbonate, etc.) containing supporting electrolyte (e.g. hexafluorophosphoric acid ion) and the product is subjected to the electrolytic reduction to obtain the objective polymer.
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公开(公告)号：JPS61187374A
公开(公告)日：1986-08-21
申请号：JP2649885
申请日：1985-02-15
Inventor： HAYASHI YUTAKA , SATO MASAAKI , YOSHIHARA HIROAKI
IPC: H01L29/861 , H01L29/90
Abstract: PURPOSE:To arbitrarily select a breakdown voltage by absorbing a surge current by a punch-through generated when a depletion layer generated by a reverse bias to a P-N junction diode arrives at the third region. CONSTITUTION:When a reverse bias is applied to a P-N junction diode which forms the first semiconductor region 1 and the second semiconductor region 2, a depletion layer generated at the junction is extended to the region 1, and also extended simultaneously toward the third region 3. The depletion layer is continuously extended in response to the magnitude of the applied voltage, and when it arrives at the region 3 soon, a punch-through occurs between the regions 1 and 3. A surge current is absorbed through a current path, and the voltage across the element is clamped to the prescribed value. Accordingly, the punch-through voltage between the regions 1 and 3 and hence the breakdown voltage as a surge absorber can be arbitrarily altered and controlled according to what degree of the effective thickness Dt of the intermediate region 2 is set.
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公开(公告)号：JPH04320066A
公开(公告)日：1992-11-10
申请号：JP11218491
申请日：1991-04-18
Applicant: AGENCY IND SCIENCE TECHN , SANKOSHA CO LTD , OUME KOSUMOSU DENKI KK
Inventor： HAYASHI YUTAKA , SATO MASAAKI , MAEYASHIKI YOSHIKI
IPC: H01L29/74 , H01L29/861
Abstract: PURPOSE:To enhance controllability or stability of a breakover current, a holding current and to improve surge resistance by eliminating to incorporate a part in contact with a surface of a second semiconductor region over an edge at least nearest a fourth region at the peripheral edge of a third region in a second ohmic electrode. CONSTITUTION:Since a second ohmic electrode 32 does not have, though in contact with a surface of a second semiconductor region 22, a contact at the side near a fourth semiconductor region 24, a hole current fH always passes a lower surface of a third semiconductor region 23 and then flows to the electrode 32 thereby to establish its passage. That is, it means that controllability, stability of a breakover current, a holding current are enhanced. In fact, this is confirmed by experiments. A result in which a surge resistance is also generally increased in proportion to an area of an element, is obtained.
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