公开(公告)号：JP2006276021A

公开(公告)日：2006-10-12

申请号：JP2006091679

申请日：2006-03-29

Applicant: Agilent Technol Inc ,  アジレント・テクノロジーズ・インクAgilent Technologies, Inc.

Inventor： KILLEEN KEVIN P ,  YIN HONGFENG ,  KRAICZEK KARSTEN G

IPC: G01N30/26 ,  G01N30/02 ,  G01N30/10 ,  G01N30/34 ,  G01N30/72 ,  G01N30/88

CPC classification number: G01N30/10 ,  G01N30/20 ,  G01N30/34 ,  G01N30/6095 ,  G01N2030/201 ,  G01N2030/202 ,  G01N2030/385

Abstract: PROBLEM TO BE SOLVED: To provide an improved microflow control system for reducing delay time in gradient high-speed liquid chromatography. SOLUTION: In this method, a device, which includes a mechanism for optionally diverting a part of mobile phase, flowing through a mobile phase transport pipe, into a liquid transport pipe containing stationary phase to separate sample components, is used. This device is equipped with the liquid transport pipe, containing stationary phase communicated with at least one mobile phase transport pipe which includes the mechanism for optionally diverting a part of mobile phase flowing through the mobile phase transport pipe, and the remainder of the mobile phase flows into the liquid transport pipe containing the stationary phase. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供改进的微流控制系统，用于减少梯度高速液相色谱中的延迟时间。 解决方案：在该方法中，使用包括用于将流过流动相输送管的流动相的一部分转移到含有固定相的液体输送管中以分离样品组分的机构的装置。 该装置配备有液体输送管，其包含与至少一个流动相输送管连通的固定相，其包括用于可选地转移流过流动相输送管的流动相的一部分的机构，以及流动相流的其余部分 进入含有固定相的液体输送管。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：GB2446254A

公开(公告)日：2008-08-06

申请号：GB0800269

申请日：2008-01-08

Applicant: AGILENT TECHNOLOGIES INC

Inventor： BEERLING TIMOTHY ,  KRAICZEK KARSTEN G ,  BRENNAN REID A

IPC: B81C1/00 ,  B82B3/00 ,  G01N30/60

Abstract: The apparatus. e.g. a chromatograph, has a buried silicon oxide layer 104, e.g. between two silicon layers 102, 106, with at least one fluid channel, particularly a nanochannel. The channel can be made in the buried layer 104 by an etching method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer 104. It is possible to manufacture a very thin buried oxide layer 104 with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way.

公开(公告)号：GB2446254B

公开(公告)日：2011-09-07

申请号：GB0800269

申请日：2008-01-08

Applicant: AGILENT TECHNOLOGIES INC

Inventor： BEERLING TIMOTHY ,  KRAICZEK KARSTEN G ,  BRENNEN REID A

IPC: B81C1/00 ,  B82B3/00 ,  G01N30/60

Abstract: In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.

公开(公告)号：GB2446254B8

公开(公告)日：2011-11-23

申请号：GB0800269

申请日：2008-01-08

Applicant: AGILENT TECHNOLOGIES INC

Inventor： BEERLING TIMOTHY ,  KRAICZEK KARSTEN G ,  BRENNEN REID A

IPC: B81C1/00 ,  B82B3/00 ,  G01N30/60

Abstract: In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.

公开(公告)号：DE102008005350B4

公开(公告)日：2012-03-08

申请号：DE102008005350

申请日：2008-01-21

Applicant: AGILENT TECHNOLOGIES INC

Inventor： BEERLING TIMOTHY ,  KRAICZEK KARSTEN G ,  BRENNEN REID A

IPC: B81B1/00 ,  B81C1/00 ,  B82Y15/00 ,  G01N27/62

Abstract: Verfahren zum Herstellen einer mikrofluidischen Vorrichtung mit einem Kanal, der eine Dickenabmessung aufweist, wobei das Verfahren folgende Schritte umfasst: – Bereitstellen einer Halbleiterstruktur mit einem unter einer Siliziumschicht (102) angeordneten vergrabenen Siliziumoxidabschnitt (10schnitts die Dickenabmessung des zu erzeugenden Kanals festlegt; – Erzeugen einer Mehrzahl von Durchgangsöffnungen (108) durch die Siliziumschicht (102), wobei die Durchgangsöffnungen (108) in Richtung der Längserstreckung des zu erzeugenden Kanals beabstandet sind; und – Ätzen des Siliziumoxids des vergrabenen Siliziumoxidabschnittes, wobei die Siliziumschicht (102) als ein Ätzstopp dient, wodurch sich von den Durchgangsöffnungen (108) ausbreitende Ätzfronten zu dem Kanal vereinigen.

公开(公告)号：DE102008005350A1

公开(公告)日：2008-08-07

申请号：DE102008005350

申请日：2008-01-21

Applicant: AGILENT TECHNOLOGIES INC

Inventor： BEERLING TIMOTHY ,  KRAICZEK KARSTEN G ,  BRENNEN REID A

IPC: B81B1/00 ,  B81C1/00 ,  G01N27/62

Abstract: In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.