Abstract:
PROBLEM TO BE SOLVED: To improve disadvantages in switching technology, and inhibit oxide formation to limit switching performance. SOLUTION: As a replacement for mercury, a liquid metal switch (300) utilizing a droplet (310) of conductive liquid composed of a material containing gallium is provided. By a secondary fluid (313) surrounding the material containing gallium, oxide formation on the surface of the droplet (310) of the conductive liquid is inhibited. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a planar inductor which can be used with various micro switches including a liquid metal micro switch. SOLUTION: The planar inductor of the present invention comprises a device substrate (150, 160), an inductor channel (105) which: is at least partially demarcated by a part of the device substrate; has at least one substantially spiral shape; and includes a plurality of channel segments substantially parallel to one another, and a liquid conductor (110) disposed in the inductor channel. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a three-step liquid metal switch with high reliability with respect to a liquid metal switch. SOLUTION: The three-step liquid metal switch of one embodiment of this device using an electrowetting (EWOD) on a dielectric is provided with a common EWOD switch 1310 having an input port 1302, a first common switch output 1336, and a second common EWOD switch output 1338, a first EWOD switch 1340 having a first EWOD switch input 1343, a first output port 1304, and a first EWOD switch output 1368, and a second EWOD switch 1370 having a second EWOD switch input 1373, a second output port 1306, and a second EWOD switch output 1398. The first common EWOD switch output 1336 is connected to the first EWOD switch input 1343 capable of operation and the second common EWOD switch output 1338 is connected to the second EWOD switch input 1373 capable of operation. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
The apparatus. e.g. a chromatograph, has a buried silicon oxide layer 104, e.g. between two silicon layers 102, 106, with at least one fluid channel, particularly a nanochannel. The channel can be made in the buried layer 104 by an etching method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer 104. It is possible to manufacture a very thin buried oxide layer 104 with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way.
Abstract:
In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.
Abstract:
The method involves precipitating a hard mask on a titanium substrate, masking the hard mask with a photoresist layer, and structuring the photo resist layer. A reactive ion etching (RIE) is implemented on the masked hard layer to structure a micro fluidic structure on the hard mask. The structured photo resist layer is removed, and the micro fluidic structure is etched in the hard masked titanium substrate under utilization of a deep reactive ion etching (DRIE) e.g. chlorine-based DRIE etching and a chlorine-boron-trichloride-mixture-based DRIE etching.
Abstract:
An electronic switch (300) comprises a droplet (310) of conductive liquid located in contact with a surface (312) having an alterable surface configuration, an input contact (324) located on the alterable surface and configured such that the input contact (324) is in constant electrical contact with the droplet (310), and a micro-electronic mechanical system (MEMS) (304) for altering the surface configuration to change the contact angle of the droplet (310) with respect to the surface (312).
Abstract:
Verfahren zum Herstellen einer mikrofluidischen Vorrichtung mit einem Kanal, der eine Dickenabmessung aufweist, wobei das Verfahren folgende Schritte umfasst: – Bereitstellen einer Halbleiterstruktur mit einem unter einer Siliziumschicht (102) angeordneten vergrabenen Siliziumoxidabschnitt (10schnitts die Dickenabmessung des zu erzeugenden Kanals festlegt; – Erzeugen einer Mehrzahl von Durchgangsöffnungen (108) durch die Siliziumschicht (102), wobei die Durchgangsöffnungen (108) in Richtung der Längserstreckung des zu erzeugenden Kanals beabstandet sind; und – Ätzen des Siliziumoxids des vergrabenen Siliziumoxidabschnittes, wobei die Siliziumschicht (102) als ein Ätzstopp dient, wodurch sich von den Durchgangsöffnungen (108) ausbreitende Ätzfronten zu dem Kanal vereinigen.
Abstract:
In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.
Abstract:
An electronic switch (400) comprises a substrate (402) having a surface (416) and an embedded electrode (404), a droplet (410) of conductive liquid located over the embedded electrode (404), and a power source (414) configured to create an electric circuit including the droplet (410) of conductive liquid. The surface (416) comprises a feature (482) that determines a contact angle between the surface (416) and the droplet (410).