SYSTEMS AND METHODS FOR DYNAMICALLY SWITCHING MEMORY PERFORMANCE STATES
    1.
    发明申请
    SYSTEMS AND METHODS FOR DYNAMICALLY SWITCHING MEMORY PERFORMANCE STATES 审中-公开
    用于动态切换存储器性能状态的系统和方法

    公开(公告)号:WO2018052712A1

    公开(公告)日:2018-03-22

    申请号:PCT/US2017/049290

    申请日:2017-08-30

    Applicant: APPLE INC.

    Abstract: Systems, apparatuses, and methods for improved memory controller power management techniques. An apparatus includes control logic, one or more memory controller(s), and one or more memory devices. If the amount of traffic and/or queue depth for a given memory controller falls below a threshold, the clock frequency supplied to the given memory controller and corresponding memory device(s) is reduced. In one embodiment, the clock frequency is reduced by one half. If the amount of traffic and/or queue depth rises above the threshold, then the clock frequency is increased back to its original frequency. The clock frequency may be adjusted by doubling the divisor used by a clock divider, which enables fast switching between the original rate and the reduced rate. This in turn allows for more frequent switching between the low power and normal power states, resulting in the memory controller and memory device operating more efficiently.

    Abstract translation: 用于改善存储器控制器功率管理技术的系统,设备和方法。 一种设备包括控制逻辑,一个或多个存储器控制器和一个或多个存储器设备。 如果给定存储器控制器的通信量和/或队列深度的量下降到阈值以下,则提供给给定存储器控制器和相应存储器设备的时钟频率被降低。 在一个实施例中,时钟频率减半。 如果业务量和/或队列深度增加到阈值以上,则时钟频率增加回到其原始频率。 时钟频率可以通过将时钟分频器使用的除数加倍来调整,这可以在原始速率和降低的速率之间进行快速切换。 这反过来又允许在低功率状态和正常功率状态之间更频繁地切换,从而导致存储器控制器和存储器设备更高效地工作。

    DYNAMIC REFRESH RATE CONTROL
    2.
    发明申请

    公开(公告)号:WO2021011236A1

    公开(公告)日:2021-01-21

    申请号:PCT/US2020/041039

    申请日:2020-07-07

    Applicant: APPLE INC.

    Abstract: In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.

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