公开(公告)号：WO2018186996A1

公开(公告)日：2018-10-11

申请号：PCT/US2018/021899

申请日：2018-03-12

Applicant: APPLE INC.

Inventor： LAFLAQUIERE, Arnaud ,  DRADER, Marc ,  VEROVE, Christophe

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/20

Abstract: An optoelectronic device (40) includes a semiconductor substrate (42) with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack (44). A second set of epitaxial layers formed over the first set defines a quantum well structure (46), and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack (48). At least the third set of epitaxial layers is contained in a mesa (88) having sides that are perpendicular to the epitaxial layers. A dielectric coating (94) extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes (54) are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.

公开(公告)号：EP3704510A1

公开(公告)日：2020-09-09

申请号：EP17829087.0

申请日：2017-12-18

Applicant: Apple Inc.

Inventor： LAFLAQUIÈRE, Arnaud ,  DRADER, Marc

IPC: G01S17/10 ,  G01S17/89 ,  G01S7/481 ,  G01S7/484

公开(公告)号：EP3497757A1

公开(公告)日：2019-06-19

申请号：EP17772843.3

申请日：2017-09-18

Applicant: Apple Inc.

Inventor： LAFLAUIERE, Arnaud ,  DRADER, Marc

IPC: H01S5/026 ,  H01S5/183 ,  H01L27/15 ,  H01L25/16

公开(公告)号：EP4105684A1

公开(公告)日：2022-12-21

申请号：EP22169910.1

申请日：2022-04-26

Applicant: Apple Inc.

Inventor： LAFLAQUIÈRE, Arnaud ,  NICLASS, Cristiano L. ,  DRADER, Marc

IPC: G01S7/483 ,  G01S17/89

Abstract: An optoelectronic device (20) includes a first semiconductor die (22), having first front and rear surfaces (32, 34) and including at least one avalanche photodetector (28) configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die (24) has a second front surface (36), which is bonded to the first rear surface, and a second rear surface (40), and includes a photodetector receiver analog circuit (48) coupled to the at least one avalanche photodetector and an emitter driver circuit (50) configured to drive a pulsed optical emitter (52). A third semiconductor die (26) has a third front surface (42), which is bonded to the second rear surface, and a third rear surface, and includes logic circuits (60, 62, 64) coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.