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公开(公告)号：WO2020163139A3
公开(公告)日：2020-08-13
申请号：PCT/US2020/015763
申请日：2020-01-30
Applicant: APPLE INC.
Inventor： LYON, Keith , LAFLAQUIERE, Arnaud
Abstract: An optoelectronic device (20) includes a semiconductor substrate (22) having first and second faces. A first array of emitters (24, 26) are formed on the first face of the semiconductor substrate and are configured to emit respective beams (28) of radiation through the substrate. Electrical connections (36, 38) are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses (30, 76, 78) are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.
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公开(公告)号：WO2020172077A1
公开(公告)日：2020-08-27
申请号：PCT/US2020/018475
申请日：2020-02-17
Applicant: APPLE INC.
Inventor： PARK, Jae Y. , LAFLAQUIERE, Arnaud , VEROVE, Christophe , TAN, Fei
Abstract: An optoelectronic device includes a carrier substrate (22), with a lower distributed Bragg-reflector (DBR) stack (24) disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers (26, 28, 30, 31, 34) is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure (28) and a confinement layer (31). An upper DBR stack (38) is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes (40, 42) are coupled to apply an excitation current to the quantum well structure.
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公开(公告)号：WO2021221894A1
公开(公告)日：2021-11-04
申请号：PCT/US2021/026939
申请日：2021-04-13
Applicant: APPLE INC.
Inventor： TAN, Fei , LAFLAQUIERE, Arnaud , LIN, Chinhan , VEROVE, Christophe , PARK, Jae Y
IPC: H01S5/0234 , H01S5/183 , H01S5/30 , H01S5/42 , H01S5/02 , H01S5/024 , H01S5/028 , H01S5/323 , H01S5/40
Abstract: An optoelectronic device (22) includes: (i) a semiconductor substrate (24) with a first level of n-type dopants, (ii) a contact semiconductor layer (25) disposed over the semiconductor substrate (24) and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) (79) stack disposed over the contact semiconductor layer (25) and including alternating first and second epitaxial semiconductor layers (55) having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers (35, 36) disposed over the upper DBR (79), the set of epitaxial layers (35, 36) includes one or more III-V semiconductor materials and defines: (a) a quantum well structure (33), and (b) a confinement layer (44), and (v) a lower DBR (78) stack disposed over the set of epitaxial layers (35, 36), opposite the upper DBR (79), and including alternating dielectric and semiconductor layers (52, 54).
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公开(公告)号：WO2020205166A1
公开(公告)日：2020-10-08
申请号：PCT/US2020/021631
申请日：2020-03-09
Applicant: APPLE INC.
Inventor： LI, Weiping , LAFLAQUIERE, Arnaud , FANG, Xiaolong
Abstract: An optoelectronic device (20, 120) includes a semiconductor substrate (24). A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack (42). A second set of thin-film layers (40, 46) is disposed over the lower DBR stack and defines an optical emission region (43), which is contained in a mesa defined by multiple trenches (28, 128), which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack (44, 124). Electrodes (30, 130) are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.
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公开(公告)号：WO2021003139A1
公开(公告)日：2021-01-07
申请号：PCT/US2020/040263
申请日：2020-06-30
Applicant: APPLE INC.
Inventor： DRADER, Marc A. , LIN, Chin Han , TAN, Fei , LAFLAQUIERE, Arnaud , LYON, Keith , LI, Weiping
IPC: H01S5/026 , H01S5/183 , H01S5/42 , G01S7/4912
Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
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Patent Agency Ranking
公开(公告)号：WO2018057975A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/053083
申请日：2017-09-22
Applicant: APPLE INC.
Inventor： MANDAI, Shingo , NICLASS, Cristiano L. , KARASAWA, Nobuhiro , FAN, Xiaofeng , LAFLAQUIERE, Arnaud , AGRANOV, Gennadiy A.
IPC: H01L27/146
Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.
Abstract translation: 背照式单光子雪崩二极管（SPAD）图像传感器包括垂直堆叠在电路晶片上的传感器晶片。 传感器晶片包括一个或多个SPAD区域，每个SPAD区域（400）包括阳极梯度层（402），位于SPAD区域的前表面附近的阴极区域（404）以及阳极雪崩层（408 ）位于阴极区域上方。 每个SPAD区域通过晶片间连接器连接到电路晶片中的电压源和输出电路。 深沟槽隔离元件（424）用于在SPAD区域之间提供电气和光学隔离。
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公开(公告)号：WO2021211281A1
公开(公告)日：2021-10-21
申请号：PCT/US2021/024548
申请日：2021-03-29
Applicant: APPLE INC.
Inventor： LAFLAQUIERE, Arnaud
IPC: G09G3/00 , G09G3/20 , G09G3/3225
Abstract: An optoelectronic device (20) includes a display (22), including a first substrate (45), which is transparent to optical radiation at a given wavelength, and a first array of display cells (30) including pixel circuit elements (32, 34, 38) disposed on the first substrate at a first pitch, with gaps (36) of a predefined size between the pixel circuit elements. An emitter array (40) includes a second substrate (51), parallel and in proximity to the first substrate, and a second array of emitters (42), which are disposed on the second substrate at a second pitch that is different from the first pitch, and which are configured to emit optical radiation at the given wavelength toward the first substrate. Control circuitry (50) is configured to identify the emitters that are aligned with the gaps between the pixel circuit elements and to selectively drive the identified emitters to emit the optical radiation through the gaps.
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公开(公告)号：WO2020163139A2
公开(公告)日：2020-08-13
申请号：PCT/US2020/015763
申请日：2020-01-30
Applicant: APPLE INC.
Inventor： LYON, Keith , LAFLAQUIERE, Arnaud
Abstract: An optoelectronic device (20) includes a semiconductor substrate (22) having first and second faces. A first array of emitters (24, 26) are formed on the first face of the semiconductor substrate and are configured to emit respective beams (28) of radiation through the substrate. Electrical connections (36, 38) are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses (30, 76, 78) are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.
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公开(公告)号：WO2018186996A1
公开(公告)日：2018-10-11
申请号：PCT/US2018/021899
申请日：2018-03-12
Applicant: APPLE INC.
Inventor： LAFLAQUIERE, Arnaud , DRADER, Marc , VEROVE, Christophe
Abstract: An optoelectronic device (40) includes a semiconductor substrate (42) with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack (44). A second set of epitaxial layers formed over the first set defines a quantum well structure (46), and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack (48). At least the third set of epitaxial layers is contained in a mesa (88) having sides that are perpendicular to the epitaxial layers. A dielectric coating (94) extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes (54) are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.
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公开(公告)号：EP3712945A2
公开(公告)日：2020-09-23
申请号：EP20172808.6
申请日：2017-09-22
Applicant: Apple Inc.
Inventor： MANDAI, Shingo , NICLASS, Cristiano L. , KARASAWA, Nobuhiro , FAN, Xiaofeng , LAFLAQUIERE, Arnaud , AGRANOV, Grennadiy A.
IPC: H01L27/146 , H01L31/107
Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.
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