公开(公告)号：WO2021221894A1

公开(公告)日：2021-11-04

申请号：PCT/US2021/026939

申请日：2021-04-13

Applicant: APPLE INC.

Inventor： TAN, Fei ,  LAFLAQUIERE, Arnaud ,  LIN, Chinhan ,  VEROVE, Christophe ,  PARK, Jae Y

IPC: H01S5/0234 ,  H01S5/183 ,  H01S5/30 ,  H01S5/42 ,  H01S5/02 ,  H01S5/024 ,  H01S5/028 ,  H01S5/323 ,  H01S5/40

Abstract: An optoelectronic device (22) includes: (i) a semiconductor substrate (24) with a first level of n-type dopants, (ii) a contact semiconductor layer (25) disposed over the semiconductor substrate (24) and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) (79) stack disposed over the contact semiconductor layer (25) and including alternating first and second epitaxial semiconductor layers (55) having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers (35, 36) disposed over the upper DBR (79), the set of epitaxial layers (35, 36) includes one or more III-V semiconductor materials and defines: (a) a quantum well structure (33), and (b) a confinement layer (44), and (v) a lower DBR (78) stack disposed over the set of epitaxial layers (35, 36), opposite the upper DBR (79), and including alternating dielectric and semiconductor layers (52, 54).

公开(公告)号：WO2018186996A1

公开(公告)日：2018-10-11

申请号：PCT/US2018/021899

申请日：2018-03-12

Applicant: APPLE INC.

Inventor： LAFLAQUIERE, Arnaud ,  DRADER, Marc ,  VEROVE, Christophe

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/20

Abstract: An optoelectronic device (40) includes a semiconductor substrate (42) with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack (44). A second set of epitaxial layers formed over the first set defines a quantum well structure (46), and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack (48). At least the third set of epitaxial layers is contained in a mesa (88) having sides that are perpendicular to the epitaxial layers. A dielectric coating (94) extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes (54) are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.

公开(公告)号：WO2020172077A1

公开(公告)日：2020-08-27

申请号：PCT/US2020/018475

申请日：2020-02-17

Applicant: APPLE INC.

Inventor： PARK, Jae Y. ,  LAFLAQUIERE, Arnaud ,  VEROVE, Christophe ,  TAN, Fei

IPC: H01L33/10 ,  H01S5/183

Abstract: An optoelectronic device includes a carrier substrate (22), with a lower distributed Bragg-reflector (DBR) stack (24) disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers (26, 28, 30, 31, 34) is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure (28) and a confinement layer (31). An upper DBR stack (38) is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes (40, 42) are coupled to apply an excitation current to the quantum well structure.

公开(公告)号：EP3888138A1

公开(公告)日：2021-10-06

申请号：EP20710737.6

申请日：2020-02-17

Applicant: Apple Inc.

Inventor： PARK, Jae Y. ,  LAFLAQUIERE, Arnaud ,  VEROVE, Christophe ,  TAN, Fei

IPC: H01L33/10 ,  H01S5/183