SELF REFERENCED SINGLE-ENDED CHIP TO CHIP COMMUNICATION

    公开(公告)号:WO2020154221A1

    公开(公告)日:2020-07-30

    申请号:PCT/US2020/014266

    申请日:2020-01-20

    Applicant: APPLE INC.

    Abstract: A system and method for efficiently transporting data in a computing system are contemplated. In various embodiments, a computing system includes a source, a destination and multiple lanes between them for transporting data. Multiple receivers in the destination has a respective termination resistor connected to a single integrating capacitor, which provides a reference voltage to the multiple receivers. The receivers reconstruct the received data by comparing the corresponding input signals to the reference voltage. The source includes a table storing code words. The source maps a generated data word to a code word, which is sent to the destination. The destination maps the received code word to the data word. The values of the code words are selected to maintain a nearly same number of Boolean ones on the multiple lanes over time as a number of Boolean zeroes.

    ON-CHIP PARAMETER MEASUREMENT
    2.
    发明申请
    ON-CHIP PARAMETER MEASUREMENT 审中-公开
    片上参数测量

    公开(公告)号:WO2017058342A1

    公开(公告)日:2017-04-06

    申请号:PCT/US2016/042975

    申请日:2016-07-19

    Applicant: APPLE INC.

    Abstract: An apparatus and method for performing on-chip parameter measurement is disclosed. In one embodiment, an IC includes a number of functional circuit blocks each having one or more sensors for measuring parameters such as voltage and temperature. Each of the functional blocks includes circuitry coupled to receive power from a local supply voltage node. Similarly, the circuitry in each of the sensors is also coupled to receive power from the corresponding local supply voltage node. Each of the sensors may be calibrated to compensate for process, voltage, and temperature variations. Various methods based on characterization of the sensors may be used to perform the calibrations.

    Abstract translation: 公开了一种用于执行片上参数测量的装置和方法。 在一个实施例中,IC包括多个功能电路块,每个功能电路块具有用于测量诸如电压和温度的参数的一个或多个传感器。 每个功能块包括耦合以从本地电源电压节点接收功率的电路。 类似地,每个传感器中的电路也被耦合以从相应的本地电源电压节点接收功率。 可以校准每个传感器以补偿过程,电压和温度变化。 可以使用基于传感器表征的各种方法来执行校准。

    MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:WO2015020836A3

    公开(公告)日:2015-02-12

    申请号:PCT/US2014/048603

    申请日:2014-07-29

    Applicant: APPLE INC.

    Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

    MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:EP4006972A2

    公开(公告)日:2022-06-01

    申请号:EP22150527.4

    申请日:2014-07-29

    Applicant: Apple Inc.

    Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

    MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:EP4006972A3

    公开(公告)日:2022-12-28

    申请号:EP22150527.4

    申请日:2014-07-29

    Applicant: Apple Inc.

    Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device includes a plurality of passive elements formed on a semiconductor substrate. The passive elements are arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device are coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

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