公开(公告)号：WO2018057975A1

公开(公告)日：2018-03-29

申请号：PCT/US2017/053083

申请日：2017-09-22

Applicant: APPLE INC.

Inventor： MANDAI, Shingo ,  NICLASS, Cristiano L. ,  KARASAWA, Nobuhiro ,  FAN, Xiaofeng ,  LAFLAQUIERE, Arnaud ,  AGRANOV, Gennadiy A.

IPC: H01L27/146

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.

Abstract translation: 背照式单光子雪崩二极管（SPAD）图像传感器包括垂直堆叠在电路晶片上的传感器晶片。 传感器晶片包括一个或多个SPAD区域，每个SPAD区域（400）包括阳极梯度层（402），位于SPAD区域的前表面附近的阴极区域（404）以及阳极雪崩层（408 ）位于阴极区域上方。 每个SPAD区域通过晶片间连接器连接到电路晶片中的电压源和输出电路。 深沟槽隔离元件（424）用于在SPAD区域之间提供电气和光学隔离。

公开(公告)号：EP3712945A2

公开(公告)日：2020-09-23

申请号：EP20172808.6

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： MANDAI, Shingo ,  NICLASS, Cristiano L. ,  KARASAWA, Nobuhiro ,  FAN, Xiaofeng ,  LAFLAQUIERE, Arnaud ,  AGRANOV, Grennadiy A.

IPC: H01L27/146 ,  H01L31/107

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：EP3712945A3

公开(公告)日：2020-12-02

申请号：EP20172808.6

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： MANDAI, Shingo ,  NICLASS, Cristiano L. ,  KARASAWA, Nobuhiro ,  FAN, Xiaofeng ,  LAFLAQUIERE, Arnaud ,  AGRANOV, Grennadiy A.

IPC: H01L27/146 ,  H01L31/107

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region (400) including an anode gradient layer (402), a cathode region (404) positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer (408) positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements (424) are used to provide electrical and optical isolation between SPAD regions.

公开(公告)号：EP3516692A1

公开(公告)日：2019-07-31

申请号：EP17778446.9

申请日：2017-09-22

Applicant: Apple Inc.

Inventor： MANDAI, Shingo ,  NICLASS, Cristiano L. ,  KARASAWA, Nobuhiro ,  FAN, Xiaofeng ,  LAFLAQUIERE, Arnaud ,  AGRANOV, Gennadiy A.

IPC: H01L27/146