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    CREATING ARBITRARY PATTERNS ON A 2-D UNIFORM GRID VCSEL ARRAY
    1.
    发明申请
    CREATING ARBITRARY PATTERNS ON A 2-D UNIFORM GRID VCSEL ARRAY 审中-公开

    公开(公告)号：WO2019045873A1

    公开(公告)日：2019-03-07

    申请号：PCT/US2018/040531

    申请日：2018-07-02

    Applicant: APPLE INC.

    Inventor： LIN, Chin Han ,  LI, Weiping ,  FAN, Xiaofeng

    IPC: H01S5/42 ,  H01S5/183 ,  H01S5/042 ,  H01S5/20

    Abstract: An optoelectronic device includes a semiconductor substrate (10) and an array of optoelectronic cells (12), formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack (20); second epitaxial layers formed over the lower DBR stack, defining a quantum well structure (22); third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack (24); and electrodes (30) formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells (16), interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

    SELF-MIXING INTERFERENCE DEVICE FOR SENSING APPLICATIONS
    2.
    发明申请
    SELF-MIXING INTERFERENCE DEVICE FOR SENSING APPLICATIONS 审中-公开

    公开(公告)号：WO2021003139A1

    公开(公告)日：2021-01-07

    申请号：PCT/US2020/040263

    申请日：2020-06-30

    Applicant: APPLE INC.

    Inventor： DRADER, Marc A. ,  LIN, Chin Han ,  TAN, Fei ,  LAFLAQUIERE, Arnaud ,  LYON, Keith ,  LI, Weiping

    IPC: H01S5/026 ,  H01S5/183 ,  H01S5/42 ,  G01S7/4912

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

    CREATING ARBITRARY PATTERNS ON A 2-D UNIFORM GRID VCSEL ARRAY
    4.
    发明公开
    CREATING ARBITRARY PATTERNS ON A 2-D UNIFORM GRID VCSEL ARRAY 审中-公开

    公开(公告)号：EP4047762A1

    公开(公告)日：2022-08-24

    申请号：EP22159829.5

    申请日：2018-07-02

    Applicant: Apple Inc.

    Inventor： LIN, Chin Han ,  LI, Weiping ,  FAN, Xiaofeng

    IPC: H01S5/42 ,  H01S5/183 ,  H01S5/042 ,  H01S5/20 ,  H01S5/026

    Abstract: An optoelectronic device includes a semiconductor substrate (10) and an array of optoelectronic cells (12), formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack (20); second epitaxial layers formed over the lower DBR stack, defining a quantum well structure (22); third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack (24); and electrodes (30) formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells (16), interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

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