公开(公告)号：WO2019147589A1

公开(公告)日：2019-08-01

申请号：PCT/US2019/014595

申请日：2019-01-22

Applicant: APPLE INC.

Inventor： SIZOV, Dmitry S. ,  BITA, Ion ,  DROLET, Jean-Jacques P. ,  LEONARD, John T. ,  STECKEL, Jonathan S. ,  LAWRENCE, Nathaniel T. ,  XIN, Xiaobin ,  BOSE, Ranojoy

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/60 ,  H01L33/54 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

公开(公告)号：EP3357096A1

公开(公告)日：2018-08-08

申请号：EP16820506.0

申请日：2016-12-14

Applicant: Apple Inc.

Inventor： BOUR, David P. ,  HAEGER, Daniel A. ,  SIZOV, Dimitry S. ,  XIN, Xiaobin

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/14

CPC classification number: H01L33/02 ,  H01L33/0095 ,  H01L33/14 ,  H01L33/145

Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.