公开(公告)号：WO2016028478A1

公开(公告)日：2016-02-25

申请号：PCT/US2015/043441

申请日：2015-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： JOHANSON, William ,  ZHANG, Fuhong ,  ALLEN, Adolph Miller ,  LIU, Yu Y.

IPC: C23C14/34 ,  C23C14/14 ,  C23C14/54

CPC classification number: H01J37/347 ,  C23C14/3492 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32733 ,  H01J2237/026

Abstract: Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target.

Abstract translation: 本文提供了用于在目标寿命期间保持低不均匀性的改进方法和装置的实施例。 在一些实施例中，在物理气相沉积室中处理衬底的方法包括：在衬底支撑件顶部设置衬底，衬底支撑件具有围绕衬底支撑件的覆盖环，使得衬底的上表面位于第一距离 盖环的上表面; 从与衬底支撑件相对布置的靶溅射源材料，以在保持第一距离的同时在衬底上沉积膜; 以及相对于所述盖环降低所述基板支撑件并从所述靶溅射所述源材料以在所述目标的寿命期间将膜沉积在随后的基板上。

公开(公告)号：EP4402711A1

公开(公告)日：2024-07-24

申请号：EP22870466.4

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： XIA, Borui ,  CHAN, Anthony Chih-Tung ,  YUE, Shiyu ,  LEI, Wei ,  KAMATH, Aravind Miyar ,  SUNDARARAJAN, Makund ,  WANG, Rongjun ,  ALLEN, Adolph Miller

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01F7/0273 ,  C23C14/021

公开(公告)号：EP2176441A2

公开(公告)日：2010-04-21

申请号：EP08768603.6

申请日：2008-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ALLEN, Adolph Miller ,  YOON, Ki Hwan ,  GUO, Ted ,  YANG, Hong S. ,  YU, Sang-Ho

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3423 ,  H01J37/3435

Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

公开(公告)号：WO2017007729A1

公开(公告)日：2017-01-12

申请号：PCT/US2016/040847

申请日：2016-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： JOHANSON, William ,  SAVANDAIAH, Kirankumar ,  ALLEN, Adolph Miller ,  WANG, Xin ,  PRABHU, Prashant

IPC: C23C14/50 ,  C23C14/34

CPC classification number: C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3488

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract translation: 本文提供了具有加工套件和加工腔室的实施例。 在一些实施例中，处理套件包括沉积环，其被配置为设置在设计成支撑具有给定宽度的衬底的衬底支撑件上，包括：环形带，被配置为搁置在衬底支撑件的下凸缘上; 从所述环形带的内边缘向上延伸的内唇缘，其中所述内唇缘的内表面和所述环形带的内表面一起形成具有小于给定宽度的宽度的中心开口，并且其中， 在环形带的上表面和内唇缘的上表面之间的距离在约24mm和约38mm之间; 设置在所述环形带的径向外侧的通道; 以及向外延伸并设置在通道的径向外侧的外唇缘。

公开(公告)号：WO2010115128A9

公开(公告)日：2010-10-07

申请号：PCT/US2010/029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS, INC. ,  ALLEN, Adolph Miller ,  HAWRYLCHAK, Lara ,  XIE, Zhigang ,  RASHEED, Muhammand M. ,  WANG, Rongjun ,  TANG, Xianmin ,  LIU, Zhendong ,  GUNG, Tza-Jing ,  GANDIKOTA, Srinivas ,  CHANG, Mei ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  GE, Zhenbin

Inventor： ALLEN, Adolph Miller ,  HAWRYLCHAK, Lara ,  XIE, Zhigang ,  RASHEED, Muhammand M. ,  WANG, Rongjun ,  TANG, Xianmin ,  LIU, Zhendong ,  GUNG, Tza-Jing ,  GANDIKOTA, Srinivas ,  CHANG, Mei ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  GE, Zhenbin

IPC: H01L21/203 ,  C23C14/34

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：WO2008156794A3

公开(公告)日：2008-12-24

申请号：PCT/US2008/007611

申请日：2008-06-18

Applicant: APPLIED MATERIALS, INC. ,  ALLEN, Adolph Miller ,  YOON, Ki Hwan ,  GUO, Ted ,  YANG, Hong S. ,  YU, Sang-Ho

Inventor： ALLEN, Adolph Miller ,  YOON, Ki Hwan ,  GUO, Ted ,  YANG, Hong S. ,  YU, Sang-Ho

IPC: C23C14/34

Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

公开(公告)号：WO2021216289A1

公开(公告)日：2021-10-28

申请号：PCT/US2021/026317

申请日：2021-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YU, Tom H. ,  CHAN, Wei Min ,  WANG, Peiqi ,  WU, Kai ,  ALLEN, Adolph Miller ,  DAITO, Kazuya

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

公开(公告)号：WO2019089190A1

公开(公告)日：2019-05-09

申请号：PCT/US2018/054918

申请日：2018-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BABAYAN, Viachslav ,  ALLEN, Adolph Miller ,  CITLA, Bhargav ,  DEDORE, Ronald D. ,  FAUNE, Vanessa ,  HUA, Zhong Qiang ,  SONI, Vaibhav ,  WU, Menglu

IPC: H01L21/02 ,  H05H1/46 ,  H01L21/67 ,  C23C16/455 ,  H01L21/28

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

公开(公告)号：WO2018075165A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/051091

申请日：2017-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： BABAYAN, Viachslav ,  ALLEN, Adolph Miller ,  STOWELL, Michael ,  HUA, Zhong Qiang ,  JOHNSON, Carl R. ,  FAUNE, Vanessa ,  LIU, Jingjing

IPC: H01J37/34

Abstract: A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.

Abstract translation: 用于产生和输送用于处理室的脉冲高压信号的系统包括远程设置的高电压电源以产生高电压信号，设置在离处理室相对更近的脉冲发生器处 高电压电源，用于将远程设置的高压电源的高电压信号传送到要脉冲的脉冲发生器的第一屏蔽电缆，以及用于从脉冲发生器向处理室传送脉冲高电压信号的第二屏蔽电缆。 用于产生脉冲高压信号并将其输送到处理室的方法包括：在远离处理室的位置产生高电压信号;将高电压信号输送到相对靠近处理室的位置脉冲化; 输送高压信号，并将脉冲高压信号输送到处理室。

公开(公告)号：WO2017058567A1

公开(公告)日：2017-04-06

申请号：PCT/US2016/052602

申请日：2016-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Xiangjin ,  LIU, Feng Q. ,  YAO, Daping ,  JANSEN, Alexander ,  LEE, Joung Joo ,  ALLEN, Adolph Miller ,  TANG, Xianmin ,  CHANG, Mei

IPC: C23G5/04 ,  C23G5/032 ,  C23G3/00 ,  C11D7/26 ,  C11D17/00 ,  H05K3/26

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises an exposed conductive material; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol vapor to reduce a contaminated surface of the conductive material. In some embodiments, the substrate further comprises a first surface having an opening formed in the first surface, wherein the exposed conductive material is part of a conductive material disposed in the substrate and aligned with the opening such that a portion of the conductive material disposed in the substrate is exposed through the opening.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括暴露的导电材料; 并将基底暴露于包含约80至约100wt。 ％的醇蒸气以减少导电材料的污染表面。 在一些实施例中，衬底还包括具有形成在第一表面中的开口的第一表面，其中暴露的导电材料是设置在衬底中并与开口对准的导电材料的一部分，使得导电材料的一部分设置在 基板通过开口露出。