公开(公告)号：WO2019143858A1

公开(公告)日：2019-07-25

申请号：PCT/US2019/014076

申请日：2019-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： MUSTAFA, Muhannad ,  RASHEED, Muhammad ,  LEI, Yu ,  GELATOS, Avgerinos V. ,  BANTHIA, Vikash ,  CALDERON, Victor H. ,  TOH, Shi Wei ,  LEE, Yung-Hsin ,  SEN, Anindita

IPC: H01L21/687 ,  H01L21/683

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：WO2011123399A3

公开(公告)日：2011-10-06

申请号：PCT/US2011/030226

申请日：2011-03-28

Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad ,  HAWRYLCHAK, Lara ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  RITCHIE, Alan

Inventor： RASHEED, Muhammad ,  HAWRYLCHAK, Lara ,  COX, Michael S. ,  YOUNG, Donny ,  SAVANDAIAH, Kirankumar ,  RITCHIE, Alan

IPC: C23C14/34 ,  C23C14/54

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

公开(公告)号：WO2021127287A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065770

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： MUSTAFA, Muhannad ,  RASHEED, Muhammad

IPC: C23C16/455 ,  C23C16/44 ,  B05B1/005 ,  B05B1/185 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/4586 ,  H01L21/687

Abstract: Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.

公开(公告)号：WO2013162992A1

公开(公告)日：2013-10-31

申请号：PCT/US2013/037101

申请日：2013-04-18

Applicant: APPLIED MATERIALS, INC.

Inventor： RASHEED, Muhammad ,  ALLEN, Adolph Miller ,  WANG, Jianqi

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/04

CPC classification number: C23C14/564 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/5873 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3447

Abstract: Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

Abstract translation: 本文提供了具有加工套件屏蔽和物理气相沉积（PVD）室的实施例。 在一些实施例中，用于在物理气相沉积工艺中沉积第一材料的工艺组件屏蔽件可以包括限定由主体包围的开口的环形体，其中环形体由第一材料制成，并且蚀刻停止涂层 形成在环形体的面向开口的表面上，蚀刻停止涂层由与第一材料不同的第二材料制成，第二材料相对于第一材料具有高蚀刻选择性。

公开(公告)号：WO2014159222A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/022593

申请日：2014-03-10

Applicant: APPLIED MATERIALS, INC.

Inventor： RASHEED, Muhammad ,  SAVANDAIAH, Kirankumar ,  JOHANSON, William ,  GE, Zhenbin ,  YOSHIDOME, Goichi ,  RITCHIE, Alan A.

IPC: H01L21/02

CPC classification number: H01L21/68735 ,  C23C16/045 ,  C23C16/4585 ,  H01J37/32642

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract translation: 本文提供了用于处理基板的方法和装置的实施例。 在一些实施例中，用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环，其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件，其具有下部向内延伸的凸缘，其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时，所述导电构件将所述环电耦合到所述导电屏蔽层。

公开(公告)号：WO2011143527A3

公开(公告)日：2011-11-17

申请号：PCT/US2011/036395

申请日：2011-05-13

Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad ,  WANG, Rongjun ,  LIU, Zhendong ,  FU, Xinyu ,  TANG, Xianmin

Inventor： RASHEED, Muhammad ,  WANG, Rongjun ,  LIU, Zhendong ,  FU, Xinyu ,  TANG, Xianmin

IPC: C23C14/34 ,  C23C14/06

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

公开(公告)号：WO2014149968A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/021658

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： YOSHIDOME, Goichi ,  HANSON, Ryan ,  YOUNG, Donny ,  RASHEED, Muhammad ,  MILLER, Keith A.

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; and a plurality of slots disposed along an outer periphery of the backing plate to align the target assembly with respect to the process shield during use, wherein the plurality of slots are formed in the first side of the backing plate and extend only partially into the backing plate.

Abstract translation: 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 以及沿着所述背板的外周设置的多个槽，以在使用期间使所述目标组件相对于所述过程屏蔽对准，其中所述多个槽形成在所述背板的所述第一侧中，并且仅部分地延伸到所述背衬中 盘子。

公开(公告)号：WO2013090532A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/069435

申请日：2012-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： RITCHIE, Alan ,  YOUNG, Donny ,  MILLER, Keith A. ,  RASHEED, Muhammad ,  SANSONI, Steve ,  PAI, Uday

IPC: C23C14/34

CPC classification number: C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract translation: 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：WO2009018143A1

公开(公告)日：2009-02-05

申请号：PCT/US2008/071175

申请日：2008-07-25

Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad

Inventor： RASHEED, Muhammad

IPC: B05B13/00

CPC classification number: H01L21/68721 ,  C23C16/4585

Abstract: A process kit cover for chemical vapor deposition processes is disclosed according to one embodiment of the invention. The process kit cover may include a protrusion from the top surface of the process kit cover. The protrusion is adjacent to a wafer facing surface. The protrusion decreases oxide buildup on the process kit cover and the wafer facing surface during repeated deposition processes. The process kit cover may also be in minimal thermal contact at the interface with a lower support structure, such as a ceramic collar or pedestal, according to another embodiment of the invention. Minimal thermal contact may be achieved by placing an insulator between the process kit cover and the lower support structure or by creating a gap or gaps between the process kit cover and the lower support structure. Ambient atmosphere may provide thermal insulating within the gap or gaps.

Abstract translation: 根据本发明的一个实施例公开了一种用于化学气相沉积工艺的工艺套件盖。 处理套件盖可以包括从处理套件盖的顶表面的突出部。 突起与面向晶片的表面相邻。 在重复沉积过程中，突起减少了工艺套件盖和面向晶片表面的氧化物积累。 根据本发明的另一个实施例，处理套件盖也可以在与下支撑结构（例如陶瓷套圈或基座）的界面处的最小热接触。 可以通过在处理套件盖和下支撑结构之间放置绝缘体或者通过在处理套件盖和下支撑结构之间产生间隙或间隙来实现最小的热接触。 环境气氛可以在间隙或间隙内提供绝热。

公开(公告)号：WO2014137745A1

公开(公告)日：2014-09-12

申请号：PCT/US2014/019029

申请日：2014-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： NGUYEN, Thanh X. ,  CAO, Yong ,  RASHEED, Muhammad ,  TANG, Xianmin

IPC: C23C14/34

CPC classification number: H01J37/3423 ,  C23C14/3407 ,  H01J37/32403 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3435 ,  Y10T428/21

Abstract: A target assembly for use in a substrate processing system may include a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a diameter that is greater than the first diameter of the target supporting surface and having a first side parallel to the second side of the plate, wherein the first side of the target comprises a central portion bonded to the target supporting surface and a peripheral portion extending outward past the first edge of the plate and having a distance of about 0.040 to about 0.080 inches between the peripheral portion of the target and the second side of the plate.

Abstract translation: 用于基板处理系统的目标组件可以包括具有第一侧和相对的第二侧的板，其中第二侧包括从垂直于第二侧的方向从第二侧延伸的目标支撑表面，其中目标 支撑表面具有第一直径并且由第一边缘限定; 以及具有大于所述目标支撑面的第一直径且具有平行于所述板的第二侧的第一侧的直径的靶，其中所述靶的第一侧包括接合到所述靶支撑表面的中心部分， 外围部分向外延伸穿过板的第一边缘，并且在靶的周边部分和板的第二侧之间具有约0.040至约0.080英寸的距离。