REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS
    1.
    发明申请
    REDUNDANT TEMPERATURE SENSOR FOR SEMICONDUCTOR PROCESSING CHAMBERS 审中-公开
    用于半导体处理器的冗余温度传感器

    公开(公告)号:WO2009082539A1

    公开(公告)日:2009-07-02

    申请号:PCT/US2008/080810

    申请日:2008-10-22

    CPC classification number: G01K7/04 G01K13/00 G01K15/00 H01L21/67248

    Abstract: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple (110) comprising a first junction (112) and a second junction (114) positioned to measure temperature at substantially the same portion of a substrate (16). A controller (120) may detect failures in the first junction (112), the second junction (114), a first wire pair (113) extending from the first junction (112), or a second wire pair (115) extending from the second junction (114). The controller (120) desirably responds to a detected failure of the first junction (112) or first wire pair (113) by selecting the second junction (114) and second wire pair (115). Conversely, the controller (120) desirably responds to a detected failure of the second junction (114) or second wire pair (115) by selecting the first junction (112) and first wire pair (113). Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

    Abstract translation: 提供用于测量半导体处理室中的温度的系统。 实施例提供了多结热电偶(110),其包括第一结(112)和第二结(114),第二结(114)被定位成测量衬底(16)的基本相同部分处的温度。 控制器(120)可以检测第一结(112),第二结(114),从第一结(112)延伸的第一线对(113)或从第一结(112)延伸的第二线对 第二结(114)。 控制器120期望通过选择第二连接点114和第二线对115来响应检测到的第一结112或第一线对113的故障。 相反地​​,控制器120期望通过选择第一结(112)和第一线对(113)来响应第二结(114)或第二线对(115)的检测到的故障。 尽管本文教导的系统可能允许精确和基本上不间断的温度测量,尽管热电偶中的接头或线对失效。

    THERMOCOUPLE
    2.
    发明申请
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号:WO2008147731A1

    公开(公告)日:2008-12-04

    申请号:PCT/US2008/063919

    申请日:2008-05-16

    CPC classification number: G01K1/08 G01K7/02 G01K7/04

    Abstract: A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

    Abstract translation: 一种具有支撑管的热电偶,其构造成接收一对异种金属线。 热电偶的一对导线在与支撑管的一端相邻的连接处连接。 热电偶还包括附接到支撑管的相对端的盖,其中盖接收一对电线的自由端。 该盖允许一对电线自由地平移以适应一对电线相对于支撑管的热膨胀和收缩的热膨胀和收缩的差异。

    THERMOCOUPLE
    3.
    发明申请
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号:WO2010077533A2

    公开(公告)日:2010-07-08

    申请号:PCT/US2009/066377

    申请日:2009-12-02

    CPC classification number: G01K7/04 C23C16/46 G01K13/00

    Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    Abstract translation: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    THERMOCOUPLE
    4.
    发明公开
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号:EP2370996A2

    公开(公告)日:2011-10-05

    申请号:EP09836647.9

    申请日:2009-12-02

    CPC classification number: G01K7/04 C23C16/46 G01K13/00

    Abstract: A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    Abstract translation: 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件,第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    THERMOCOUPLE
    5.
    发明授权
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号:EP2156155B1

    公开(公告)日:2011-02-09

    申请号:EP08755721.1

    申请日:2008-05-16

    CPC classification number: G01K1/08 G01K7/02 G01K7/04

    Abstract: A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

    Abstract translation: 一种具有支撑管的热电偶,该支撑管被构造成接收一对异种金属丝。 热电偶的这对导线连接在靠近支撑管一端的连接处。 所述热电偶还包括附接到所述支撑管的相对端的帽,其中所述帽接收所述一对线的自由端。 该帽允许该对导线自由地平移穿过,以适应该对导线相对于支撑管的热膨胀和收缩的热膨胀和收缩的差异。

    LONG LIFE HIGH TEMPERATURE PROCESS CHAMBER
    7.
    发明公开
    LONG LIFE HIGH TEMPERATURE PROCESS CHAMBER 有权
    与长寿命高温工艺室

    公开(公告)号:EP1029109A1

    公开(公告)日:2000-08-23

    申请号:EP98957469.4

    申请日:1998-11-02

    Abstract: A generally horizontally-oriented quartz CVD chamber (10) is disclosed with front and rear chamber divider plates (16, 18) adjacent a centrally positioned susceptor (20) and surrounding temperature control ring (22) which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate (30) for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples (34) adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.

    THERMOCOUPLE
    8.
    发明公开
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号:EP2156155A1

    公开(公告)日:2010-02-24

    申请号:EP08755721.1

    申请日:2008-05-16

    CPC classification number: G01K1/08 G01K7/02 G01K7/04

    Abstract: A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

    LONG LIFE HIGH TEMPERATURE PROCESS CHAMBER
    9.
    发明授权
    LONG LIFE HIGH TEMPERATURE PROCESS CHAMBER 有权
    与长寿命高温工艺室

    公开(公告)号:EP1029109B1

    公开(公告)日:2007-09-26

    申请号:EP98957469.4

    申请日:1998-11-02

    Abstract: A generally horizontally-oriented quartz CVD chamber (10) is disclosed with front and rear chamber divider plates (16, 18) adjacent a centrally positioned susceptor (20) and surrounding temperature control ring (22) which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate (30) for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples (34) adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.

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