Abstract:
Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple (110) comprising a first junction (112) and a second junction (114) positioned to measure temperature at substantially the same portion of a substrate (16). A controller (120) may detect failures in the first junction (112), the second junction (114), a first wire pair (113) extending from the first junction (112), or a second wire pair (115) extending from the second junction (114). The controller (120) desirably responds to a detected failure of the first junction (112) or first wire pair (113) by selecting the second junction (114) and second wire pair (115). Conversely, the controller (120) desirably responds to a detected failure of the second junction (114) or second wire pair (115) by selecting the first junction (112) and first wire pair (113). Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.
Abstract:
A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.
Abstract:
A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
Abstract:
A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.
Abstract:
A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.
Abstract:
A generally horizontally-oriented quartz CVD chamber (10) is disclosed with front and rear chamber divider plates (16, 18) adjacent a centrally positioned susceptor (20) and surrounding temperature control ring (22) which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate (30) for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples (34) adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.
Abstract:
A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.
Abstract:
A generally horizontally-oriented quartz CVD chamber (10) is disclosed with front and rear chamber divider plates (16, 18) adjacent a centrally positioned susceptor (20) and surrounding temperature control ring (22) which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate (30) for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples (34) adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.