公开(公告)号：WO2003025243A2

公开(公告)日：2003-03-27

申请号：PCT/US2002/029032

申请日：2002-09-10

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  ELERS, Kai Erik ,  LI, Wei-Min

Inventor： ELERS, Kai Erik ,  LI, Wei-Min

IPC: C23C

CPC classification number: C23C16/45534 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

Abstract: The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Abstract translation: 本方法提供用于生长适形金属薄膜（150）的工具，包括金属氮化物，金属碳化物和金属氮化碳薄膜。 特别地，提供了用于从侵蚀性化学品生长这样的膜的方法。 过渡金属，过渡金属碳化物，过渡金属氮化物和过渡金属氮化碳薄膜在各种表面如金属和氧化物的沉积过程中，诸如卤化氢等腐蚀性化合物的量减少。 吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。 还公开了包含金属薄膜的纳米层压结构及其形成方法。

公开(公告)号：WO2009129332A2

公开(公告)日：2009-10-22

申请号：PCT/US2009/040705

申请日：2009-04-15

Applicant: ASM AMERICA, INC.

Inventor： LI, Dong ,  MARCUS, Steven ,  HAUKKA, Suvi, P. ,  LI, Wei-Min

IPC: H01L21/205 ,  H01L21/336 ,  H01L21/28 ,  H01L21/3205

CPC classification number: C23C16/32 ,  C23C16/45527 ,  H01L21/28088 ,  H01L21/28273 ,  H01L21/28562 ,  H01L21/76843 ,  H01L29/4966

Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施方案中，将基底暴露于过渡金属物质和铝烃化合物（例如TMA，DMAH或TEA）的交替脉冲。 选择铝烃化合物以实现金属碳化物膜的所需性质，例如铝浓度，电阻率，粘附性和抗氧化性。 在一些实施例中，所述方法用于形成确定闪速存储器中的控制栅极的功函数的金属碳化物层。

公开(公告)号：WO2003025243A3

公开(公告)日：2003-03-27

申请号：PCT/US2002/029032

申请日：2002-09-10

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  ELERS, Kai Erik ,  LI, Wei-Min

Inventor： ELERS, Kai Erik ,  LI, Wei-Min

IPC: C23C16/455

Abstract: The present methods provide tools for growing conformal metal thin films (150), including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

公开(公告)号：WO2003016587A1

公开(公告)日：2003-02-27

申请号：PCT/US2002/026192

申请日：2002-08-15

Applicant: ASM MICROCHEMISTRY OY ,  ASM AMERICA, INC,

Inventor： KILPELA, Olli ,  SAANILA, Ville ,  LI, Wei-Min ,  ELERS, Kai-Erik ,  KOSTAMO, Juhana ,  RAAIJMAKERS, Ivo ,  GRANNEMAN, Ernst

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

Abstract: Various reactors for growing thin films on a substrate (16) by subjecting the substrate (16) to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor (12) comprises a reaction chamber (14). A showerhead plate (67) divides the reaction chamber (14) into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber (14) and a second precursor is directed towards the upper half of the reaction chamber (14). The substrate (16) is disposed within the lower half of the reaction chamber (14). The showerhead plate (67) includes plurality passages (72) such that the upper half is in communication with the lower half of the reaction chamber (14). In another arrangement, the reaction chamber (14) includes a shutter plate (120). In other arrangements, the showerhead plate (67) is arranged to modify the local flow patterns of the gases flowing through the reaction chamber (14).

Abstract translation: 公开了通过使衬底（16）交替重复气相反应的表面反应来在衬底（16）上生长薄膜的各种反应器。 在一个实施例中，反应器（12）包括反应室（14）。 喷头板（67）将反应室（14）分成上部和下部。 第一前体指向反应室（14）的下半部分，第二前体指向反应室（14）的上半部分。 基板（16）设置在反应室（14）的下半部内。 喷头板（67）包括多个通道（72），使得上半部分与反应室（14）的下半部连通。 在另一布置中，反应室（14）包括挡板（120）。 在其他布置中，喷头板（67）布置成改变流过反应室（14）的气体的局部流动模式。