公开(公告)号：WO2002065525A1

公开(公告)日：2002-08-22

申请号：PCT/US2002/004745

申请日：2002-02-12

Applicant: ASM AMERICA, INC.

Inventor： POMAREDE, Christophe ,  GIVENS, Michael, E. ,  SHERO, Eric, J. ,  TODD, Michael, A.

IPC: H01L21/28

CPC classification number: H01L21/28194 ,  B82Y10/00 ,  C23C16/0272 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/4925 ,  H01L29/517 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods are provided herein for forming electrode layers over high dielectric constant ("high k") materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is first formed (70) and then protected from reduction during a subsequent deposition (79) of silicon-containing gate electrode. In particular, a seed deposition phase (74) includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably altered (76) for higher deposition rates and deposition continues in a bulk phase (78). Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, a higher order silanes, such as disilane and trisilane, aid in reducing hydrogen content for a given deposition rate.

Abstract translation: 本文提供了用于在高介电常数（“高k”）材料上形成电极层的方法。 在所示实施例中，首先形成高k栅极电介质，例如氧化锆，然后在随后的含硅栅电极的沉积（79）期间保护不被还原。 特别地，种子沉积阶段（74）包括设计用于最小化栅极电介质的氢还原的条件，包括硅源气体的低氢含量，低温和/或低分压。 优选改变条件（76）以获得更高的沉积速率，并且在体相中继续沉积（78）。 然而，尽管通过控制上述参数仍然使氢扩散最小化。 在一个实施例中，通过省略氢载体气体来最小化高k电介质的减小。 在另一个实施方案中，高级硅烷如乙硅烷和丙硅烷可有助于降低给定沉积速率的氢含量。

公开(公告)号：WO2003100836A1

公开(公告)日：2003-12-04

申请号：PCT/US2003/015843

申请日：2003-05-20

Applicant: ASM AMERICA, INC.

Inventor： POMAREDE, Christophe ,  SHERO, Eric, J. ,  JYLIHA, Olli

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  H01L21/67748 ,  Y10S438/908

Abstract: In accordance with one aspect of the present invention, a method is provided for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber. The method comprises vacuum pumping the transfer chamber to achieve a first pressure in the transfer chamber and vacuum pumping the process chamber to achieve a second pressure in the process chamber. An inert gas is flowed into the transfer chamber and shut off in the process chamber. The transfer chamber is isolated from pumping, but pumping continues from the process chamber. The gate valve is opened after isolating the transfer chamber from pumping. The workpiece is then transferred between the transfer chamber and the process chamber. A definitive flow direction from transfer chamber to process chamber is thereby achieved, minimizing risk of back-diffusion.

Abstract translation: 根据本发明的一个方面，提供了一种用于在包括传送室，处理室和闸阀的半导体处理设备中在传送室和处理室之间传输工件的方法。 该方法包括真空泵送传送室以在传送室中实现第一压力，并且真空泵送处理室以在处理室中实现第二压力。 惰性气体流入传送室并在处理室中关闭。 传送室与泵送隔离，但是从处理室继续泵送。 隔离传送室后，闸阀打开。 然后将工件在传送室和处理室之间传送。 从而实现从传送室到处理室的确定的流动方向，从而最小化反向扩散的风险。

公开(公告)号：EP1506570A1

公开(公告)日：2005-02-16

申请号：EP03731261.8

申请日：2003-05-20

Applicant: ASM America, Inc.

Inventor： POMAREDE, Christophe ,  SHERO, Eric, J. ,  JYLIHA, Olli

IPC: H01L21/00

CPC classification number: H01L21/67017 ,  H01L21/67748 ,  Y10S438/908

Abstract: In accordance with one aspect of the present invention, a method is provided for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber. The method comprises vacuum pumping the transfer chamber to achieve a first pressure in the transfer chamber and vacuum pumping the process chamber to achieve a second pressure in the process chamber. An inert gas is flowed into the transfer chamber and shut off in the process chamber. The transfer chamber is isolated from pumping, but pumping continues from the process chamber. The gate valve is opened after isolating the transfer chamber from pumping. The workpiece is then transferred between the transfer chamber and the process chamber. A definitive flow direction from transfer chamber to process chamber is thereby achieved, minimizing risk of back-diffusion.