公开(公告)号：WO2010080252A1

公开(公告)日：2010-07-15

申请号：PCT/US2009/066510

申请日：2009-12-03

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  SHERO, Eric ,  REED, Joe

IPC: H01L21/205

CPC classification number: C23C16/45544 ,  C23C16/4585 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68771

Abstract: A semiconductor processing apparatus includes a reaction chamber (202, 302, 402), a movable susceptor (208, 308, 408, 508, 808), a movement element (210, 310, 810), and a control system (211, 811). The reaction chamber (202, 302, 402) includes a baseplate (212, 312, 412, 512, 812). The baseplate (212, 312, 412, 512, 812) includes an opening (250, 350, 450, 550). The movable susceptor (208, 308, 408, 508, 808) is configured to hold a workpiece (W). The movable element (210, 310, 810) is configured to move a workpiece (W) held on the susceptor (208, 308, 408, 508, 808) towards the opening (250, 350, 450, 550) of the baseplate (212, 312, 412, 512, 812). The control system (211, 811) is configured to space the susceptor (208, 308, 408, 508, 808) from the baseplate (212, 312, 412, 512, 812) by an unsealed gap (216, 316, 416, 516, 816) during processing of a workpiece (W) in the reaction chamber (202, 302, 402). Purge gases may flow through the gap (216, 316, 416, 516, 816) into the reaction chamber (202, 302, 402). Methods of maintaining the gap (216, 316, 416, 516, 816) during processing include calibrating the height of pads (520, 530) and capacitance measurements when the susceptor (208, 308, 408, 508, 808) is spaced from the baseplate (212, 312, 412, 512, 812).

Abstract translation: 半导体处理装置包括反应室（202,302,402），可移动基座（208,308,408,508,808），运动元件（210,310,810）和控制系统（211,811） ）。 反应室（202,302,402）包括基板（212,312,412,512,812）。 底板（212,312,412,512,812）包括开口（250,350,450,550）。 移动基座（208,308,408,508,808）构造成保持工件（W）。 可移动元件（210,310,810）被构造成将保持在基座（208,308,408,508,808a）上的工件（W）朝基板的开口（250,350,450,550）移动 212,312,412,512,812）。 控制系统（211,811）被配置为通过未密封的间隙（216,316,416,812）将基座（208,308,408,508,808）从底板（212,312,412,512,812） 516）在处理反应室（202,302,402）中的工件（W）时， 吹扫气体可以流过间隙（216,316,416,516,816）进入反应室（202,302,402）。 在处理过程中保持间隙（216,316,416,516,816）的方法包括：当基座（208,308,408,508,808）与第一和第二基板间隔开时，校准焊盘（520,530）的高度和电容测量值 底板（212,312,412,512,812）。