公开(公告)号：WO2003041124A3

公开(公告)日：2003-05-15

申请号：PCT/US2002/027230

申请日：2002-08-26

Applicant: ASM AMERICA, INC. ,  ASM MICROCHEMISTRY OY ,  HAUKKA, Suvi, P. ,  SHERO, Eric ,  POMAREDE, Chritophe, F. ,  HUBERT MAES, Jan, Willem ,  TUOMINEN, Marko

Inventor： HAUKKA, Suvi, P. ,  SHERO, Eric ,  POMAREDE, Chritophe, F. ,  HUBERT MAES, Jan, Willem ,  TUOMINEN, Marko

IPC: H01L21/28

Abstract: The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed (30). The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300°C.

公开(公告)号：WO2011103062A2

公开(公告)日：2011-08-25

申请号：PCT/US2011/024762

申请日：2011-02-14

Applicant: ASM AMERICA, INC.

Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  MUSCAT, Anthony ,  MILLER, Shawn

IPC: H01L21/316 ,  H01L21/205

CPC classification number: C23C16/45525 ,  B05D1/32 ,  B05D1/60 ,  B05D5/08 ,  B82Y30/00 ,  C23C16/04 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L29/517

Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM (322) can be formed on surfaces (308) for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length (334) and a second SAM precursor having molecules of a second length (338) shorter than the first. Examples of exposed surfaces for which a mixed SAM (322) can be provided over include reactor surfaces and select surfaces of integrated circuit structures (800), such as insulator and dielectric layers.

Abstract translation: 描述了与形成用于防止反应器内的暴露表面上的不期望的生长或成核的混合SAM相关的方法和结构。 可以通过引入具有第一长度（334）的分子的第一SAM前体和具有第二长度（338）的分子的第二SAM前体，在表面（308）上形成混合的SAM（322） 比第一个。 可以提供混合SAM（322）的暴露表面的实例包括反应器表面和诸如绝缘体和电介质层的集成电路结构（800）的选择表面。

公开(公告)号：WO2008045972A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/081005

申请日：2007-10-10

Applicant: ASM AMERICA, INC.

Inventor： FONDURULIA, Kyle ,  SHERO, Eric ,  VERGHESE, Mohith, E. ,  WHITE, Carl, L.

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

Abstract: A precursor source vessel (100) comprises a vessel body (104), a passage (145) within the vessel body (104), and a valve (108, 110, 210) attached to a surface of the body (104). An internal chamber (111) is adapted to contain a chemical reactant, and the passage (145) extends from outside the body (104) to the chamber (111). The valve (108, 110, 210) regulates flow through the passage (145). The vessel (100) has inlet and outlet valves (108, 110), and optionally a vent valve (210) for venting internal gas. An external gas panel (97) can include at least one valve (182) fluidly interposed between the outlet valve (110) and a substrate reaction chamber (162). Gas panel valves (182) can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel (100). Filters (130) in a vessel Hd (106) or wall filter gas flow through the vessel's valves (108, 110, 210). A quick-connection assembly (102) allows fast and easy connection of the vessel (100) to a gas panel (97).

Abstract translation: 前体源容器（100）包括容器主体（104），容器主体（104）内的通道（145）和连接到主体（104）表面的阀（108,110,210）。 内室（111）适于容纳化学反应物，并且通道（145）从主体（104）的外部延伸到腔室（111）。 阀（108,110,210）调节通过通道（145）的流动。 容器（100）具有入口和出口阀（108,110），并且可选地具有用于排放内部气体的排气阀（210）。 外部气体面板（97）可以包括流体插入在出口阀（110）和基板反应室（162）之间的至少一个阀（182）。 燃气面板阀（182）可以分别沿着与容器（100）的平坦表面大致平行且不超过约10.0cm的平面定位。 容器Hd（106）中的过滤器（130）或壁过滤气体流过容器的阀门（108,110,210）。 快速连接组件（102）允许容器（100）快速且容易地连接到气体面板（97）。

公开(公告)号：WO2010126675A2

公开(公告)日：2010-11-04

申请号：PCT/US2010/029562

申请日：2010-04-01

Applicant: ASM AMERICA, INC.

Inventor： RAGHAVAN , Srini ,  SHERO, Eric ,  VERGHESE , Mohith

IPC: H01L21/02

CPC classification number: C09K13/02 ,  C11D7/06 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0041 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/45525 ,  C23G1/18 ,  C23G1/205 ,  C23G1/22

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract translation: 组合物，方法和系统允许从反应器金属部件（例如钛和/或钛合金）中选择性地蚀刻金属氧化物。 蚀刻组合物包含碱金属氢氧化物和没食子酸。 该方法对于用于沉积金属氧化物膜如氧化铝的反应室是有用的。

公开(公告)号：WO2010118051A3

公开(公告)日：2010-10-14

申请号：PCT/US2010/030126

申请日：2010-04-06

Applicant: ASM AMERICA, INC. ,  SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

IPC: C23C16/455

Abstract: A reactor having a housing that encloses a gas delivery system (14) operatively connected to a reaction chamber (16) and an exhaust assembly (18). The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer (20) for receiving the at least one process gas. The mixer is operatively connected to a diffuser (22) that is configured to diffuse process gases. The diffuser is attached directly to an upper surface (24) of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

公开(公告)号：WO2011019950A1

公开(公告)日：2011-02-17

申请号：PCT/US2010/045368

申请日：2010-08-12

Applicant: ASM AMERICA, INC. ,  SHERO, Eric ,  RAISANEN, Petri ,  JUNG, Sung, Hoon ,  WANG, Chang-Gong

Inventor： SHERO, Eric ,  RAISANEN, Petri ,  JUNG, Sung, Hoon ,  WANG, Chang-Gong

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C01B13/11

CPC classification number: C23C16/40 ,  C01B13/11 ,  C01B2201/64 ,  C23C16/45553 ,  C23C16/52

Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

Abstract translation: 描述了系统和方法，其中除了别的以外是将膜沉积在反应室内的基底上。 在示例性方法中，该方法可以包括将原子层沉积循环应用于衬底，其中该循环可以包括将衬底暴露于用于前体脉冲间隔的前体气体，然后此后除去前体气体，并将衬底暴露于 氧化剂，其包含氧化剂气体和用于氧化脉冲间隔的含氮物质气体，然后除去氧化剂。 本发明的方面利用分子激发的氮氧自由基/离子物质可能与氧化剂如臭氧进一步组合。 本发明的实施例还包括电子部件和系统，其包括用与本发明一致的方法制造的装置。

公开(公告)号：WO2006078666A2

公开(公告)日：2006-07-27

申请号：PCT/US2006/001640

申请日：2006-01-17

Applicant: ASM AMERICA, INC. ,  VERGHESE, Mohith ,  SHERO, Eric ,  BABIC, Darko ,  TERHORST, Herbert ,  PEUSSA, Marko ,  YAN, Min

Inventor： VERGHESE, Mohith ,  SHERO, Eric ,  BABIC, Darko ,  TERHORST, Herbert ,  PEUSSA, Marko ,  YAN, Min

IPC: C30B25/14 ,  C23C16/455

CPC classification number: H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract translation: 原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

公开(公告)号：WO2010090781A3

公开(公告)日：2010-08-12

申请号：PCT/US2010/020098

申请日：2010-01-05

Applicant: ASM AMERICA, INC.

Inventor： REED, Joseph, C. ,  SHERO, Eric

IPC: H01L21/02 ,  H01L21/205

Abstract: A semiconductor processing apparatus includes a reaction chamber, a loading chamber, a movable support, a drive mechanism, and a control system. The reaction chamber includes a baseplate. The baseplate includes an opening. The movable support is configured to hold a workpiece. The drive mechanism is configured to move a workpiece held on the support towards the opening of the baseplate into a processing position. The control system is configured to create a positive pressure gradient between the reaction chamber and the loading chamber while the workpiece support is in motion. Purge gases flow from the reaction chamber into the loading chamber while the workpiece support is in motion. The control system is configured to create a negative pressure gradient between the reaction chamber and the loading chamber while the workpiece is being processed. Purge gases can flow from the loading chamber into the reaction chamber while the workpiece support is in the processing position, unless the reaction chamber is sealed from the loading chamber in the processing position.

公开(公告)号：WO2010080252A1

公开(公告)日：2010-07-15

申请号：PCT/US2009/066510

申请日：2009-12-03

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  SHERO, Eric ,  REED, Joe

IPC: H01L21/205

CPC classification number: C23C16/45544 ,  C23C16/4585 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68771

Abstract: A semiconductor processing apparatus includes a reaction chamber (202, 302, 402), a movable susceptor (208, 308, 408, 508, 808), a movement element (210, 310, 810), and a control system (211, 811). The reaction chamber (202, 302, 402) includes a baseplate (212, 312, 412, 512, 812). The baseplate (212, 312, 412, 512, 812) includes an opening (250, 350, 450, 550). The movable susceptor (208, 308, 408, 508, 808) is configured to hold a workpiece (W). The movable element (210, 310, 810) is configured to move a workpiece (W) held on the susceptor (208, 308, 408, 508, 808) towards the opening (250, 350, 450, 550) of the baseplate (212, 312, 412, 512, 812). The control system (211, 811) is configured to space the susceptor (208, 308, 408, 508, 808) from the baseplate (212, 312, 412, 512, 812) by an unsealed gap (216, 316, 416, 516, 816) during processing of a workpiece (W) in the reaction chamber (202, 302, 402). Purge gases may flow through the gap (216, 316, 416, 516, 816) into the reaction chamber (202, 302, 402). Methods of maintaining the gap (216, 316, 416, 516, 816) during processing include calibrating the height of pads (520, 530) and capacitance measurements when the susceptor (208, 308, 408, 508, 808) is spaced from the baseplate (212, 312, 412, 512, 812).

Abstract translation: 半导体处理装置包括反应室（202,302,402），可移动基座（208,308,408,508,808），运动元件（210,310,810）和控制系统（211,811） ）。 反应室（202,302,402）包括基板（212,312,412,512,812）。 底板（212,312,412,512,812）包括开口（250,350,450,550）。 移动基座（208,308,408,508,808）构造成保持工件（W）。 可移动元件（210,310,810）被构造成将保持在基座（208,308,408,508,808a）上的工件（W）朝基板的开口（250,350,450,550）移动 212,312,412,512,812）。 控制系统（211,811）被配置为通过未密封的间隙（216,316,416,812）将基座（208,308,408,508,808）从底板（212,312,412,512,812） 516）在处理反应室（202,302,402）中的工件（W）时， 吹扫气体可以流过间隙（216,316,416,516,816）进入反应室（202,302,402）。 在处理过程中保持间隙（216,316,416,516,816）的方法包括：当基座（208,308,408,508,808）与第一和第二基板间隔开时，校准焊盘（520,530）的高度和电容测量值 底板（212,312,412,512,812）。

公开(公告)号：WO2008042981A2

公开(公告)日：2008-04-10

申请号：PCT/US2007/080342

申请日：2007-10-03

Applicant: ASM AMERICA, INC. ,  WANG, Chang-gong ,  SHERO, Eric ,  WILK, Glen

Inventor： WANG, Chang-gong ,  SHERO, Eric ,  WILK, Glen

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/405 ,  C23C16/401 ,  C23C16/45531

Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.

Abstract translation: 提供了用于形成金属硅酸盐膜的方法。 该方法包括使衬底与硅源化学品，金属源化学品和氧化剂的交替和顺序汽相脉冲接触，其中金属源化学品是在硅源化学品之后提供的下一反应物。 根据一些实施方案的方法可以用于形成在基材表面上具有基本均匀的膜覆盖率的富硅硅酸铪和硅酸锆膜。