公开(公告)号：WO2010123666A2

公开(公告)日：2010-10-28

申请号：PCT/US2010/029558

申请日：2010-04-01

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  SHERO, Eric, J. ,  PEUSSA, Marko

IPC: H01L21/205 ,  C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45561

Abstract: An apparatus and method of growing a thin film onto a substrate comprises placing a substrate in a reaction chamber and subjecting the substrate to surface reactions of a plurality of vapor-phase reactants according to the ALD method. Non-fully closing valves are placed into the reactant feed conduit and backsuction conduit of an ALD system. The non-fully closed valves are operated such that one valve is open and the other valve is closed during the purge or pulse cycle of the ALD process.

Abstract translation: 将薄膜生长到基板上的装置和方法包括将基板放置在反应室中，并使基板根据ALD方法对多个气相反应物进行表面反应。 非完全关闭阀被放置在ALD系统的反应物进料导管和反向导管中。 操作非完全关闭的阀门，使得一个阀门打开，另一个阀门在ALD过程的清洗或脉冲循环期间关闭。

公开(公告)号：WO2010080252A1

公开(公告)日：2010-07-15

申请号：PCT/US2009/066510

申请日：2009-12-03

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  SHERO, Eric ,  REED, Joe

IPC: H01L21/205

CPC classification number: C23C16/45544 ,  C23C16/4585 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68771

Abstract: A semiconductor processing apparatus includes a reaction chamber (202, 302, 402), a movable susceptor (208, 308, 408, 508, 808), a movement element (210, 310, 810), and a control system (211, 811). The reaction chamber (202, 302, 402) includes a baseplate (212, 312, 412, 512, 812). The baseplate (212, 312, 412, 512, 812) includes an opening (250, 350, 450, 550). The movable susceptor (208, 308, 408, 508, 808) is configured to hold a workpiece (W). The movable element (210, 310, 810) is configured to move a workpiece (W) held on the susceptor (208, 308, 408, 508, 808) towards the opening (250, 350, 450, 550) of the baseplate (212, 312, 412, 512, 812). The control system (211, 811) is configured to space the susceptor (208, 308, 408, 508, 808) from the baseplate (212, 312, 412, 512, 812) by an unsealed gap (216, 316, 416, 516, 816) during processing of a workpiece (W) in the reaction chamber (202, 302, 402). Purge gases may flow through the gap (216, 316, 416, 516, 816) into the reaction chamber (202, 302, 402). Methods of maintaining the gap (216, 316, 416, 516, 816) during processing include calibrating the height of pads (520, 530) and capacitance measurements when the susceptor (208, 308, 408, 508, 808) is spaced from the baseplate (212, 312, 412, 512, 812).

Abstract translation: 半导体处理装置包括反应室（202,302,402），可移动基座（208,308,408,508,808），运动元件（210,310,810）和控制系统（211,811） ）。 反应室（202,302,402）包括基板（212,312,412,512,812）。 底板（212,312,412,512,812）包括开口（250,350,450,550）。 移动基座（208,308,408,508,808）构造成保持工件（W）。 可移动元件（210,310,810）被构造成将保持在基座（208,308,408,508,808a）上的工件（W）朝基板的开口（250,350,450,550）移动 212,312,412,512,812）。 控制系统（211,811）被配置为通过未密封的间隙（216,316,416,812）将基座（208,308,408,508,808）从底板（212,312,412,512,812） 516）在处理反应室（202,302,402）中的工件（W）时， 吹扫气体可以流过间隙（216,316,416,516,816）进入反应室（202,302,402）。 在处理过程中保持间隙（216,316,416,516,816）的方法包括：当基座（208,308,408,508,808）与第一和第二基板间隔开时，校准焊盘（520,530）的高度和电容测量值 底板（212,312,412,512,812）。

公开(公告)号：WO2008060754A1

公开(公告)日：2008-05-22

申请号：PCT/US2007/079335

申请日：2007-09-24

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  CURRY, Paul, G.

IPC: F16K7/12

CPC classification number: F16K7/12 ,  C23C16/44 ,  C23C16/45561 ,  F16K25/005

Abstract: A valve (100) comprises a valve seat (102) and a movable diaphragm (104). The valve seat (102) defines a fluid orifice (106) and is formed at least partially of polybenzimidazole. The diaphragm (104) is sized and configured to bear against the fluid orifice (106) to substantially block fluid flow through the orifice (106). The valve (100) is advantageously used in a hot zone (34) of a semiconductor processing system.

Abstract translation: 阀（100）包括阀座（102）和活动隔膜（104）。 阀座（102）限定流体孔口（106）并且至少部分地由聚苯并咪唑形成。 隔膜（104）的尺寸和构造适于承受流体孔口（106），以基本上阻挡流过孔口（106）的流体流动。 阀（100）有利地用于半导体处理系统的热区（34）。

公开(公告)号：WO2008045972A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/081005

申请日：2007-10-10

Applicant: ASM AMERICA, INC.

Inventor： FONDURULIA, Kyle ,  SHERO, Eric ,  VERGHESE, Mohith, E. ,  WHITE, Carl, L.

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

Abstract: A precursor source vessel (100) comprises a vessel body (104), a passage (145) within the vessel body (104), and a valve (108, 110, 210) attached to a surface of the body (104). An internal chamber (111) is adapted to contain a chemical reactant, and the passage (145) extends from outside the body (104) to the chamber (111). The valve (108, 110, 210) regulates flow through the passage (145). The vessel (100) has inlet and outlet valves (108, 110), and optionally a vent valve (210) for venting internal gas. An external gas panel (97) can include at least one valve (182) fluidly interposed between the outlet valve (110) and a substrate reaction chamber (162). Gas panel valves (182) can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel (100). Filters (130) in a vessel Hd (106) or wall filter gas flow through the vessel's valves (108, 110, 210). A quick-connection assembly (102) allows fast and easy connection of the vessel (100) to a gas panel (97).

Abstract translation: 前体源容器（100）包括容器主体（104），容器主体（104）内的通道（145）和连接到主体（104）表面的阀（108,110,210）。 内室（111）适于容纳化学反应物，并且通道（145）从主体（104）的外部延伸到腔室（111）。 阀（108,110,210）调节通过通道（145）的流动。 容器（100）具有入口和出口阀（108,110），并且可选地具有用于排放内部气体的排气阀（210）。 外部气体面板（97）可以包括流体插入在出口阀（110）和基板反应室（162）之间的至少一个阀（182）。 燃气面板阀（182）可以分别沿着与容器（100）的平坦表面大致平行且不超过约10.0cm的平面定位。 容器Hd（106）中的过滤器（130）或壁过滤气体流过容器的阀门（108,110,210）。 快速连接组件（102）允许容器（100）快速且容易地连接到气体面板（97）。