公开(公告)号：WO2004097897A3

公开(公告)日：2004-11-11

申请号：PCT/US2004/012239

申请日：2004-04-21

Applicant: ASM AMERICA, INC. ,  TODD, Michael, A. ,  WEEKS, Keith, D.

Inventor： TODD, Michael, A. ,  WEEKS, Keith, D.

IPC: C23C16/00

Abstract: Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.

公开(公告)号：WO2004009861A2

公开(公告)日：2004-01-29

申请号：PCT/US2003/022393

申请日：2003-07-18

Applicant: ASM AMERICA, INC.

Inventor： TODD, Michael, A. ,  WEEKS, Keith, D. ,  WERKHOVEN, Christiaan, J. ,  POMAREDE, Christophe, F.

IPC: C23C

CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

Abstract: Multiple sequential processes 140 are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited 100 on a substrate using trisilane as the silicon precursor. The silicon precursor is removed 110 from the reaction chamber. A silicon nitride layer is then formed by nitriding 120 the silicon layer. The nitrogen reactant is removed 110 from the reaction chamber. By repeating these steps 100, 110, 120 and 130, a silicon nitride layer of a desired thickness is formed.

Abstract translation: 在反应室中进行多个连续工艺140以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体将硅层沉积在基板上。 从反应室中除去硅前体110。 然后通过将硅层氮化120来形成氮化硅层。 从反应室中除去氮气反应物110。 通过重复这些步骤100,110,120和130，形成所需厚度的氮化硅层。