公开(公告)号：WO2004009861A2

公开(公告)日：2004-01-29

申请号：PCT/US2003/022393

申请日：2003-07-18

Applicant: ASM AMERICA, INC.

Inventor： TODD, Michael, A. ,  WEEKS, Keith, D. ,  WERKHOVEN, Christiaan, J. ,  POMAREDE, Christophe, F.

IPC: C23C

CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

Abstract: Multiple sequential processes 140 are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited 100 on a substrate using trisilane as the silicon precursor. The silicon precursor is removed 110 from the reaction chamber. A silicon nitride layer is then formed by nitriding 120 the silicon layer. The nitrogen reactant is removed 110 from the reaction chamber. By repeating these steps 100, 110, 120 and 130, a silicon nitride layer of a desired thickness is formed.

Abstract translation: 在反应室中进行多个连续工艺140以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体将硅层沉积在基板上。 从反应室中除去硅前体110。 然后通过将硅层氮化120来形成氮化硅层。 从反应室中除去氮气反应物110。 通过重复这些步骤100,110,120和130，形成所需厚度的氮化硅层。

公开(公告)号：EP1266054A2

公开(公告)日：2002-12-18

申请号：EP01918295.5

申请日：2001-03-02

Applicant: ASM America, Inc.

Inventor： WERKHOVEN, Christiaan, J. ,  RAAIJMAKERS, Ivo ,  HAUKKA, Suvi, P.

IPC: C30B25/14 ,  C23C16/44 ,  H01L21/205

CPC classification number: H01L21/28185 ,  C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24942 ,  Y10T428/2495 ,  H01L2924/00

Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles (301) or (450, 455, 460, 470) including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources (306 or 460) are introduced during the cyclical process. A graded gate dielectric (72) is thereby provided, even for extremely thin layers. The gate dielectric (72) as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric (72) can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (432) (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses (460) can gradually increase in frequency, forming a graded transition region (434), until pure copper (436) is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces.