公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20220254628A1

公开(公告)日：2022-08-11

申请号：US17666681

申请日：2022-02-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Shero ,  Glen Wilk ,  Jereld Lee Winkler

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/46 ,  C23C16/455

Abstract: Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.

公开(公告)号：US20240282572A1

公开(公告)日：2024-08-22

申请号：US18441148

申请日：2024-02-14

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Vincent Vandalon ,  Nadadur Veeraraghavan Srinath ,  Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Marko Tuominen ,  Charles Dezelah ,  YongGyu Han ,  Kranthi Kumar Vaidyula ,  Glen Wilk ,  David Zanders ,  Aranzazu Maestre Caro

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/04 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/0228

Abstract: The disclosure relates to methods and processing assemblies selectively depositing metal oxide by cyclic vapor deposition techniques. Such methods may be used for, for example, processing semiconductor substrates. More particularly, the disclosure relates to methods and assemblies for selectively depositing a metal oxide layer. Various embodiments of the current disclosure relate to selective deposition of metal oxide layers, such as dielectric layers, etch stop layers and threshold voltage shifting layers. In particular, the disclosure relates to the deposition of metal oxide layers, such as yttrium oxide (Y2O3), and doped metal oxide layers, such as yttrium-doped aluminum oxide (AlYOx) by cyclic vapor deposition processes.