公开(公告)号：WO2018109551A3

公开(公告)日：2018-06-21

申请号：PCT/IB2017/001640

申请日：2017-12-08

Applicant: ASM IP HOLDING B.V.

Inventor： MAES, Jan Willem ,  KAEPEN, Werner ,  KACHEL, Krzysztof Kamil ,  DE ROEST, David Kurt ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  CALKA, Pauline

IPC: C23C16/04 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber (2) constructed and arranged to hold at least a first substrate (12); a precursor distribution and removal system (3, 5) to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller (40) operably connected to the precursor distribution and removal system and comprising a memory M provided with a program to execute infiltration of an infiltrateable material provided on the substrate (12) when run on the sequence controller (40) by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period Tl in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.

公开(公告)号：WO2018109551A2

公开(公告)日：2018-06-21

申请号：PCT/IB2017/001640

申请日：2017-12-08

Applicant: ASM IP HOLDING B.V.

Inventor： MAES, Jan Willem ,  KAEPEN, Werner ,  KACHEL, Krzysztof Kamil ,  DE ROEST, David Kurt ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  CALKA, Pauline

IPC: C23C16/04

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber (2) constructed and arranged to hold at least a first substrate (12); a precursor distribution and removal system (3, 5) to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller (40) operably connected to the precursor distribution and removal system and comprising a memory M provided with a program to execute infiltration of an infiltrateable material provided on the substrate (12) when run on the sequence controller (40) by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period Tl in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.

公开(公告)号：WO2018020316A1

公开(公告)日：2018-02-01

申请号：PCT/IB2017/001015

申请日：2017-07-14

Applicant: ASM IP HOLDING B.V.

Inventor： PORE, Viljami ,  KNAEPEN, Werner ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  VAN DER STAR, Gido ,  SUZUKI, Toshiya

IPC: H01L21/316 ,  C23C16/455

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Abstract translation: 提供了一种通过在反应室中提供基材并以第一剂量将第一反应物引入基材从而形成不超过约一个单层的方法来填充一个或多个间隙， 第一区域上的第一反应物; 以第二剂量将第二反应物引入基底，由此通过第二反应物在表面的第二区域上形成不超过约一个单层，其中第一和第二区域在重叠区域中重叠，其中第一和第二反应物 反应并留下第一和第二区域不重叠的初始未反应区域; 以及以第三剂量将第三反应物引入基底，第三反应物与残留在初始未反应区域上的第一或第二反应物反应。

公开(公告)号：WO2018109554A1

公开(公告)日：2018-06-21

申请号：PCT/IB2017/001656

申请日：2017-12-08

Applicant: ASM IP HOLDING B.V.

Inventor： KAEPEN, Werner ,  MAES, Jan, Willem ,  JONGBLOED, Bert ,  KACHEL, Krzysztof, Kamil ,  PIERREUX, Dieter ,  DE ROEST, David, Kurt

IPC: H01L21/027 ,  H01L21/033

Abstract: A method of forming a layer on a substrate is provided by providing the substrate with a hardmask material. The hardmask material is infiltrated with infiltration material during N infiltration cycles by: a) providing a first precursor to the hardmask material on the substrate in the reaction chamber for a first period Tl; b) removing a portion of the first precursor for a second period T2; and, c) providing a second precursor to the hardmask material on the substrate for a third period T3, allowing the first and second precursor to react with each other forming the infiltration material.

公开(公告)号：WO2018020318A1

公开(公告)日：2018-02-01

申请号：PCT/IB2017/001050

申请日：2017-07-14

Applicant: ASM IP HOLDING B.V.

Inventor： PORE, Viljami ,  KNAEPEN, Werner ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  VAN AERDE, Steven ,  HAUKKA, Suvi ,  FUKAZAWA, Atsuki ,  FUKUDA, Hideaki

IPC: H01L21/316 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/45542 ,  H01J37/32009 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/76224

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Abstract translation: 根据本发明，提供了一种通过提供沉积方法来填充在衬底上制造特征期间产生的一个或多个间隙的方法，所述沉积方法包括： 以第一剂量将第一反应物引入基底，由此通过第一反应物形成不超过约一个单层; 用第二剂量将第二反应物引入基底。 第一反应物以亚饱和第一剂量引入，仅到达一个或多个间隙的表面的顶部区域，第二反应物以饱和第二剂量引入，到达一个或多个间隙的表面的底部区域。 第三反应物可以以第三剂量提供给反应室中的基底，第三反应物与第一和第二反应物中的至少一种反应。

公开(公告)号：EP4174920A1

公开(公告)日：2023-05-03

申请号：EP22204475.2

申请日：2022-10-28

Applicant: ASM IP Holding B.V.

Inventor： OOSTERLAKEN, Theodorus G.M. ,  PIERREUX, Dieter

IPC: H01L21/673

Abstract: A semiconductor substrate processing apparatus, comprising a processing chamber, a wafer boat and a plurality of wafer supports. The wafer boat is configured to accommodate a plurality of wafers and is receivable in the processing chamber for depositing a layer on each wafer. The wafer boat comprises at least two wafer boat posts, wherein each wafer boat post comprises a plurality of slots. Each wafer support comprises a support area configured to support at least a circumferential edge of a wafer, and a flange circumferentially surrounding the support area. The flange is receivable in and supported by the slots and has a width to create a distance between the circumferential edge of the wafer and the wafer boat posts. The distance is such that the wafer boat posts do substantially not influence a layer thickness of the layer which is deposited on the wafer during processing of the wafer.

公开(公告)号：EP4318557A1

公开(公告)日：2024-02-07

申请号：EP23188785.2

申请日：2023-07-31

Applicant: ASM IP Holding B.V.

Inventor： PIERREUX, Dieter ,  JONGBLOED, Bert ,  ERNUR, Didem

IPC: H01L21/673

Abstract: A wafer boat and a method for forming a layer on a plurality of substrates that are provided in the wafer boat is disclosed. Embodiments of the presently described wafer boat comprise at least two wafer boat rods, each of which comprising at least a first set of slots for holding a plurality of substrates. The wafer boat further comprises a plurality of plates , whereby at least one slot of the at least first set of slots is provided in between two neighboring plates.

公开(公告)号：EP4328350A1

公开(公告)日：2024-02-28

申请号：EP23192235.2

申请日：2023-08-18

Applicant: ASM IP Holding B.V.

Inventor： PARUI, Subir ,  KNAEPEN, Werner ,  PIERREUX, Dieter ,  HOUBEN, Kelly ,  TERHORST, Herbert ,  OOSTERLAKEN, Theodorus G.M. ,  KARAGIANNIS, Angelos

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

公开(公告)号：EP4116459A1

公开(公告)日：2023-01-11

申请号：EP22183082.1

申请日：2022-07-05

Applicant: ASM IP Holding B.V.

Inventor： PIERREUX, Dieter ,  OOSTERLAKEN, Theodorus G.M. ,  TERHORST, Herbert ,  JDIRA, Lucian ,  JONGBLOED, Bert

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.