公开(公告)号：US20250101581A1

公开(公告)日：2025-03-27

申请号：US18973788

申请日：2024-12-09

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G.M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US11674220B2

公开(公告)日：2023-06-13

申请号：US17376238

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC: C23C16/06 ,  C23C16/455 ,  C23C28/00 ,  C23C16/30 ,  C23C16/32

CPC classification number: C23C16/06 ,  C23C16/303 ,  C23C16/305 ,  C23C16/32 ,  C23C16/45527 ,  C23C28/341

Abstract: Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US12203166B2

公开(公告)日：2025-01-21

申请号：US17307007

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G. M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US20220018016A1

公开(公告)日：2022-01-20

申请号：US17376238

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/32 ,  C23C16/30 ,  C23C28/00

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

公开(公告)号：US20240401190A1

公开(公告)日：2024-12-05

申请号：US18673554

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Do Han Kim ,  Jereld Lee Winkler ,  Amit Mishra ,  Paul Ma ,  Todd Robert Dunn ,  Moataz Bellah Mousa

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

公开(公告)号：US20240258154A1

公开(公告)日：2024-08-01

申请号：US18425107

申请日：2024-01-29

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric Christopher Stevens ,  Amit Mishra ,  Chad Russell Lunceford ,  Paul Ma

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/3205

CPC classification number: H01L21/68735 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/4585 ,  C23C16/52 ,  H01L21/32051 ,  H01L21/68757 ,  H01L21/68764

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. Methods, systems, and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20220349051A1

公开(公告)日：2022-11-03

申请号：US17729645

申请日：2022-04-26

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Jereld Lee Winkler ,  Moataz Bellah Mousa ,  Mustafa Muhammad ,  Paul Ma ,  Hichem M'Saad ,  Ying-Shen Kuo ,  Chad Lunceford ,  Shuaidi Zhang

IPC: C23C16/44 ,  B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01J37/32

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

公开(公告)号：US20210348271A1

公开(公告)日：2021-11-11

申请号：US17307007

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G.M. Oosterlaken

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/455 ,  C23C16/06

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US20230352332A1

公开(公告)日：2023-11-02

申请号：US18138776

申请日：2023-04-25

Applicant: ASM IP Holding B.V.

Inventor： Shubham Garg ,  Jaeyong Cho ,  Amit Mishra ,  Akshay Phadnis

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H05B3/283

Abstract: An electrostatic chuck (ESC) pedestal heater that includes a pedestal body and a surface on the pedestal body for receiving a substrate such as a high bow wafer. An electrode is embedded in the pedestal body to selectively generate an electrostatic force. The ESC pedestal heater includes a substrate contact surface that is raised to a height above the surface on the pedestal body and includes an inner seal band, an intermediate seal band, and an outer seal band extending. In the substrate contact surface, main spokes are provided that extend outward from the inner seal band to the outer seal band, and ancillary spokes may be provided between the main spokes in the region between the intermediate and outer seal bands. Additionally, contact areas or dots are provided in the substrate contact surface in the spaces between the bands and spokes.

公开(公告)号：US20230279539A1

公开(公告)日：2023-09-07

申请号：US18142283

申请日：2023-05-02

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Amit Mishra

IPC: C23C16/06 ,  C23C16/455 ,  C23C28/00 ,  C23C16/30 ,  C23C16/32

CPC classification number: C23C16/06 ,  C23C16/45527 ,  C23C28/341 ,  C23C16/303 ,  C23C16/305 ,  C23C16/32

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.