公开(公告)号：US11056567B2

公开(公告)日：2021-07-06

申请号：US16400814

申请日：2019-05-01

Applicant: ASM IP Holding B.V.

Inventor： Dong Li ,  Peng-Fu Hsu ,  Petri Raisanen ,  Moataz Bellah Mousa ,  Ward Johnson ,  Xichong Chen

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20180350588A1

公开(公告)日：2018-12-06

申请号：US15974988

申请日：2018-05-09

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Moataz Bellah Mousa ,  Peng-Fu Hsu

IPC: H01L21/02

Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.

公开(公告)号：US20230215763A1

公开(公告)日：2023-07-06

申请号：US18147038

申请日：2022-12-28

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Moataz Bellah Mousa ,  Dong Li ,  Arul Vigneswar Ravichandran ,  Yasiel Cabrera ,  Salvatore Luiso

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/08 ,  C23C16/56

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/76883 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/08 ,  C23C16/345 ,  C23C16/56

Abstract: Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

公开(公告)号：US20220351974A1

公开(公告)日：2022-11-03

申请号：US17859888

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210328036A1

公开(公告)日：2021-10-21

申请号：US17360045

申请日：2021-06-28

Applicant: ASM IP Holding B.V.

Inventor： Dong Li ,  Peng-Fu Hsu ,  Petri Raisanen ,  Moataz Bellah Mousa ,  Ward Johnson ,  Xichong Chen

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20240401194A1

公开(公告)日：2024-12-05

申请号：US18676023

申请日：2024-05-28

Applicant: ASM IP Holding B.V.

Inventor： Shuaidi Zhang ,  Mustafa Muhammad ,  Moataz Bellah Mousa ,  Paul Ma ,  Jonathan Bakke ,  Todd Robert Dunn ,  Eric James Shero ,  Jereld Lee Winkler ,  YoungChol Byun ,  Shubham Garg ,  Jacqueline Wrench

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.

公开(公告)号：US20230349040A1

公开(公告)日：2023-11-02

申请号：US18141694

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Jiyeon Kim ,  Jaebeom Lee ,  Charith Eranga Nanayakkara ,  Paul Ma ,  Chuandao Wang ,  YoungChol Byun ,  Jacqueline Wrench ,  Guannan Chen

IPC: C23C16/22 ,  C23C16/455 ,  C23C16/04 ,  C23C16/06

CPC classification number: C23C16/22 ,  C23C16/45525 ,  C23C16/045 ,  C23C16/06

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

公开(公告)号：US20230295795A1

公开(公告)日：2023-09-21

申请号：US18119884

申请日：2023-03-10

Applicant: ASM IP Holding B.V.

Inventor： Yasiel Cabrera ,  YoungChol Byun ,  Arul Vigneswar Ravichandran ,  Salvatore Luiso ,  Sang Ho Yu ,  Moataz Bellah Mousa

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/303 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/3321 ,  H01J2237/335

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

公开(公告)号：US20220349051A1

公开(公告)日：2022-11-03

申请号：US17729645

申请日：2022-04-26

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Jereld Lee Winkler ,  Moataz Bellah Mousa ,  Mustafa Muhammad ,  Paul Ma ,  Hichem M'Saad ,  Ying-Shen Kuo ,  Chad Lunceford ,  Shuaidi Zhang

IPC: C23C16/44 ,  B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01J37/32

Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

公开(公告)号：US20240401190A1

公开(公告)日：2024-12-05

申请号：US18673554

申请日：2024-05-24

Applicant: ASM IP Holding B.V.

Inventor： Do Han Kim ,  Jereld Lee Winkler ,  Amit Mishra ,  Paul Ma ,  Todd Robert Dunn ,  Moataz Bellah Mousa

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.