公开(公告)号：US20250079156A1

公开(公告)日：2025-03-06

申请号：US18814949

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Patricio Romero ,  Charles Dezelah ,  Suvidyakumar Vinod Homkar ,  Petro Deminskyi ,  Balaji Kannan ,  Michael Eugene Givens ,  Mikko Leander Nisula

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28

Abstract: The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures comprising a dipole layer, which comprises a metal and nitrogen containing film, and a method for producing the same. Further described are related methods, deposition systems, and devices. The method for forming the semiconductor structure comprising a dipole layer, comprises the steps of providing a substrate to a reaction chamber; contacting one or more metal precursor on at least part of the substrate by introducing the metal precursor in the reaction chamber; and reacting the deposited metal precursor with a nitrogen reactant in the reaction chamber, thereby forming a metal and nitrogen containing film on at least part of the substrate.

公开(公告)号：US20240218512A1

公开(公告)日：2024-07-04

申请号：US18395822

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Madhan Kumar Arulanandam ,  Balaji Kannan ,  Jereld Lee Winkler

IPC: C23C16/455

CPC classification number: C23C16/45561 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45591

Abstract: Various embodiments of the present technology may provide an accumulator having an interior region defined by a plurality of sidewalls. The accumulator may include an inlet disposed in a first sidewall and an outlet disposed within a second sidewall. The accumulator may also include a piston disposed within the interior region and a rod coupled to the piston, wherein the rod extends outside the interior region through a third sidewall.

公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US20240420958A1

公开(公告)日：2024-12-19

申请号：US18740699

申请日：2024-06-12

Applicant: ASM IP Holding B.V.

Inventor： Venkata Surya Naga Raju Chava ,  Estiaque Haidar Shourov ,  Robert Brennan Milligan ,  Mojtaba Samiee ,  Balaji Kannan ,  Dong Li ,  Rajkumar Jakkaraju

IPC: H01L21/28 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02

Abstract: Methods, system and apparatus for semiconductor processing including supporting a substrate comprising one or more oxide layers disposed on the substrate on a substrate support in a first reaction chamber, contacting a top surface of the one or more oxide layers of the substrate with an excited species, supporting the substrate in a second reaction chamber and depositing a transition metal layer over the top surface subsequent to contacting the top surface with the excited species.