公开(公告)号：US20240282572A1

公开(公告)日：2024-08-22

申请号：US18441148

申请日：2024-02-14

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Vincent Vandalon ,  Nadadur Veeraraghavan Srinath ,  Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Marko Tuominen ,  Charles Dezelah ,  YongGyu Han ,  Kranthi Kumar Vaidyula ,  Glen Wilk ,  David Zanders ,  Aranzazu Maestre Caro

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C23C16/04 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/0228

Abstract: The disclosure relates to methods and processing assemblies selectively depositing metal oxide by cyclic vapor deposition techniques. Such methods may be used for, for example, processing semiconductor substrates. More particularly, the disclosure relates to methods and assemblies for selectively depositing a metal oxide layer. Various embodiments of the current disclosure relate to selective deposition of metal oxide layers, such as dielectric layers, etch stop layers and threshold voltage shifting layers. In particular, the disclosure relates to the deposition of metal oxide layers, such as yttrium oxide (Y2O3), and doped metal oxide layers, such as yttrium-doped aluminum oxide (AlYOx) by cyclic vapor deposition processes.