公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

公开(公告)号：US20230137026A1

公开(公告)日：2023-05-04

申请号：US17973903

申请日：2022-10-26

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Koei Aida ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

公开(公告)号：US20240117492A1

公开(公告)日：2024-04-11

申请号：US18376524

申请日：2023-10-04

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida

IPC: C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45561 ,  C23C16/448 ,  C23C16/45557

Abstract: Liquid delivery system apparatus and reactor systems including such apparatus are disclosed. Exemplary liquid delivery system apparatus can be used to provide desired control of a flowrate of a liquid-source precursor, while mitigating fluctuations in flowrate that might otherwise occur and while allowing for a relatively low number of fluid lines.

公开(公告)号：US20220367151A1

公开(公告)日：2022-11-17

申请号：US17739493

申请日：2022-05-09

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida ,  Sam Kim

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

Abstract: A CVD apparatus includes a chamber, a susceptor, an entry/takeout port for a substrate, and a gate valve provided at the entry/takeout port, in which the susceptor has a mounting plate and a support, the entry/takeout port is provided on a part of a side of the chamber, and is provided in a range from an inner bottom surface of the chamber to a position corresponding to the lower surface of the mounting plate when the susceptor is located at an upper end in the vertical direction, and the inner bottom surface of the chamber, the range from the inner bottom surface of the chamber to the position corresponding to the lower surface of the mounting plate when the susceptor is located at the upper end in the vertical direction, the lower surface of the mounting plate, and the outer side surface of the support are coated with ceramic liners.

公开(公告)号：US20240258085A1

公开(公告)日：2024-08-01

申请号：US18420983

申请日：2024-01-24

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/332

Abstract: A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a gas supply unit configured to provide the reaction chamber with a main gas; a shared exhaust unit configured to exhaust the main gas from the plurality of reaction chambers; a plurality of exhaust gas lines configured to fluidly couple the shared exhaust unit to the plurality of reaction chambers; and a plurality of dilution gas lines configured to provide a dilution gas into the plurality of exhaust gas lines.

公开(公告)号：US12051567B2

公开(公告)日：2024-07-30

申请号：US17492954

申请日：2021-10-04

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/3321

Abstract: A gas supply unit is disclosed. An exemplary gas supply unit includes an upper plate provided with a plurality of injection holes; and a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; wherein one of the plurality of injection holes is a center injection hole and the other than said one of the plurality of injection holes are arranged concentrically around the center injection hole as outer injection holes; and wherein the divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

公开(公告)号：US20230360953A1

公开(公告)日：2023-11-09

申请号：US18141671

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida ,  Yukihiro Mori

IPC: H01L21/687 ,  C23C16/458

CPC classification number: H01L21/68742 ,  H01L21/6875 ,  C23C16/4586

Abstract: A wafer support device includes a susceptor having a wafer mounting surface provided on one surface and a lift pin through hole arranged in the wafer mounting surface, a lift pin inserted into the lift pin through hole, and an elevating device that raises and lowers the susceptor, the wafer mounting surface of the susceptor is uneven, a ventilation path is formed between the lift pin through hole and the lift pin.

公开(公告)号：US20220108876A1

公开(公告)日：2022-04-07

申请号：US17492954

申请日：2021-10-04

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

Abstract: A gas supply unit is disclosed. An exemplary gas supply unit includes an upper plate provided with a plurality of injection holes; and a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; wherein one of the plurality of injection holes is a center injection hole and the other than said one of the plurality of injection holes are arranged concentrically around the center injection hole as outer injection holes; and wherein the divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

公开(公告)号：USD799646S1

公开(公告)日：2017-10-10

申请号：US29575867

申请日：2016-08-30

Applicant: ASM IP Holding B.V.

Designer： Koei Aida