公开(公告)号：US12031205B2

公开(公告)日：2024-07-09

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/36 ,  C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US20250037993A1

公开(公告)日：2025-01-30

申请号：US18777790

申请日：2024-07-19

Applicant: ASM IP Holding B.V.

Inventor： Tomomi Ban ,  Annisa Noorhidayati ,  Ling Chi Hwang

IPC: H01L21/02

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise: providing a substrate within a reaction chamber; flowing a precursor on the substrate within the reaction chamber; flowing a reactant on to the substrate; and generating a plasma by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component. By generating the plasma, the precursor reacts with the reactant to form a layer and a pressure in the reaction chamber during at least the step of providing the plasma is between 2,000 and 4,000 Pa.

公开(公告)号：US20240060174A1

公开(公告)日：2024-02-22

申请号：US18234549

申请日：2023-08-16

Applicant: ASM IP Holding B.V.

Inventor： Makoto Igarashi ,  Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Ling Chi Hwang

IPC: C23C16/04

CPC classification number: C23C16/045

Abstract: Methods and systems of forming material within a recess are disclosed. Exemplary methods include forming a flowable material at a first temperature (T1) within a reaction chamber, the flowable material forming deposited material within the recess, treating the deposited material to form treated material, and heating the substrate including the treated material at a second temperature (T2) to remove a portion of the deposited material.

公开(公告)号：US20230167544A1

公开(公告)日：2023-06-01

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.