公开(公告)号：US20250037993A1

公开(公告)日：2025-01-30

申请号：US18777790

申请日：2024-07-19

Applicant: ASM IP Holding B.V.

Inventor： Tomomi Ban ,  Annisa Noorhidayati ,  Ling Chi Hwang

IPC: H01L21/02

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise: providing a substrate within a reaction chamber; flowing a precursor on the substrate within the reaction chamber; flowing a reactant on to the substrate; and generating a plasma by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component. By generating the plasma, the precursor reacts with the reactant to form a layer and a pressure in the reaction chamber during at least the step of providing the plasma is between 2,000 and 4,000 Pa.