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公开(公告)号：US20220277937A1
公开(公告)日：2022-09-01
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US20140220247A1
公开(公告)日：2014-08-07
申请号：US14166462
申请日：2014-01-28
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
IPC: C23C16/44
CPC classification number: C23C16/4405 , C23C16/4404 , C23F1/00 , C23F1/08 , H01L21/32135 , H01L21/32136
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。
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公开(公告)号：US09228259B2
公开(公告)日：2016-01-05
申请号：US14166462
申请日：2014-01-28
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: C23C16/4405 , C23C16/4404 , C23F1/00 , C23F1/08 , H01L21/32135 , H01L21/32136
Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Abstract translation: 公开了一种处理沉积反应器的方法。 该方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺杂铝的碳化钛膜或掺铝的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。
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公开(公告)号：US20230230813A2
公开(公告)日：2023-07-20
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: H01J37/32495 , C23C16/4405 , C23C16/4404 , C23C16/32
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US20210328036A1
公开(公告)日：2021-10-21
申请号：US17360045
申请日：2021-06-28
Applicant: ASM IP Holding B.V.
Inventor： Dong Li , Peng-Fu Hsu , Petri Raisanen , Moataz Bellah Mousa , Ward Johnson , Xichong Chen
IPC: H01L29/423 , H01L21/28 , H01L29/49
Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20160115590A1
公开(公告)日：2016-04-28
申请号：US14987420
申请日：2016-01-04
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
IPC: C23C16/44
CPC classification number: C23C16/4405 , C23C16/4404 , C23F1/00 , C23F1/08 , H01L21/32135 , H01L21/32136
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。
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公开(公告)号：US11967488B2
公开(公告)日：2024-04-23
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: H01J37/32495 , C23C16/32 , C23C16/4404 , C23C16/4405
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US20240014012A9
公开(公告)日：2024-01-11
申请号：US17744902
申请日：2022-05-16
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
CPC classification number: H01J37/32495 , C23C16/4405 , C23C16/4404 , C23C16/32
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
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公开(公告)号：US11056567B2
公开(公告)日：2021-07-06
申请号：US16400814
申请日：2019-05-01
Applicant: ASM IP Holding B.V.
Inventor： Dong Li , Peng-Fu Hsu , Petri Raisanen , Moataz Bellah Mousa , Ward Johnson , Xichong Chen
IPC: H01L29/423 , H01L21/28 , H01L29/49
Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
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公开(公告)号：US20160376700A1
公开(公告)日：2016-12-29
申请号：US15262990
申请日：2016-09-12
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Eric James Shero , Fred Alokozai , Dong Li , Jereld Lee Winkler , Xichong Chen
IPC: C23C16/44
CPC classification number: C23C16/4405 , C23C16/32 , C23C16/4404 , H01L21/28556 , H01L21/32051 , H01L21/76843
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。
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