公开(公告)号：WO2013178404A2

公开(公告)日：2013-12-05

申请号：PCT/EP2013/058375

申请日：2013-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： LYULINA, Irina ,  BIJNEN, Franciscus ,  EDART, Remi ,  KIERS, Antoine ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：WO2014187656A1

公开(公告)日：2014-11-27

申请号：PCT/EP2014/058996

申请日：2014-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： BOGAART, Erik ,  BIJNEN, Franciscus ,  DEN BOEF, Arie ,  MATHIJSSEN, Simon, Gijsbert, Josephus

IPC: G03F7/20 ,  G01N21/65

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.

Abstract translation: 衬底具有器件结构和计量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受到量子限制的显着影响。 测量结构（800）包括与装置特征相似的组成和尺寸的装置状结构（800b）和校准结构（800a）。 校准结构类似于组合中的器件特征，但至少在一个维度上不同。 通过使用实施拉曼光谱的检查装置和方法，可以通过比较从器件状结构和校准结构中弹性散射的辐射的光谱特征来测量器件状结构的尺寸。

公开(公告)号：WO2013178775A1

公开(公告)日：2013-12-05

申请号：PCT/EP2013/061240

申请日：2013-05-31

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： DEL PUERTO, Santiago ,  BURBANK, Daniel, ,  SCHUSTER, Mark, ,  BROMLEY, Duncan ,  BIJNEN, Franciscus

IPC: G03F7/20 ,  G03F1/38

CPC classification number: G03F7/70775 ,  G03F1/14 ,  G03F1/142 ,  G03F1/38 ,  G03F7/707 ,  G03F7/70708 ,  G03F7/70783 ,  G03F7/7085

Abstract: Position and curvature information of a patterning device (200) may be determined directly from the patterning device and controlled based on the determined information. In one embodiment, a lithographic apparatus that uses a patterning device to expose a substrate (W) comprises a position determining system that is operative to determine a relative position of the patterning device with respect to a predetermined reference frame. The patterning device may be configured for creating a patterned radiation beam from a radiation beam incident on a major surface of the patterning device. The patterning device may have a side surface (220, 222) having an edge in common with the major surface. The position determining system may include an interferometer (224a-c) that is operative to transmit light (226a-c) to the side surface and to receive the transmitted light after the transmitted light has been reflected at the side surface such that the position determining system being operative to determine a quantity representative of the relative position of the patterning device from the received reflected transmitted light..

Abstract translation: 图案形成装置（200）的位置和曲率信息可以直接从图案形成装置确定，并根据所确定的信息进行控制。 在一个实施例中，使用图案形成装置来曝光衬底（W）的光刻设备包括位置确定系统，该位置确定系统可操作以确定图案形成装置相对于预定参考系的相对位置。 图案形成装置可以被配置为从入射在图案形成装置的主表面上的辐射束产生图案化的辐射束。 图案形成装置可以具有与主表面共同的边缘的侧表面（220,222）。 位置确定系统可以包括干涉仪（224a-c），其可操作地将光（226a-c）透射到侧表面并且在透射光已经在侧表面反射之后接收透射光，使得位置确定 系统可操作以确定表示图案形成装置相对于所接收的反射透射光的相对位置的数量。